A plasma processing device member according to the disclosure includes a base material and a film formed of a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride, or a rare-earth element nitride, the film being disposed on at least part of the base material. The film includes a surface to be exposed to plasma, the surface having an arithmetic mean roughness Ra of 0.01 μm or more and 0.1 μm or less, the surface being provided with a plurality of pores, and a value obtained by subtracting an average equivalent circle diameter of the pores from an average distance between centroids of adjacent pores is 28 μm or more and 48 μm or less. A plasma processing device according to the disclosure includes the plasma processing device member described above.

Composites of silicon and various porous scaffold materials, such as carbon material comprising micro-, meso- and/or macropores, and methods for manufacturing the same are provided. The compositions find utility in various applications, including electrical energy storage electrodes and devices comprising the same.

Composites of silicon and various porous scaffold materials, such as carbon material comprising micro-, meso- and/or macropores, and methods for manufacturing the same are provided. The compositions find utility in various applications, including electrical energy storage electrodes and devices comprising the same.

Various embodiments of the present invention are directed towards a system and method relating to depositing vapor in a sample. For example, a device includes a vapor source chamber configured to contain a vapor source material to generate vapor. An activation chamber is configured to contain a sample. The activation chamber is in fluid communication with the vapor source chamber to receive the vapor. A permeable separator divides the vapor source chamber and the activation chamber, and isolates the sample in the activation chamber while allowing vapor to pass between the vapor source chamber and the activation chamber. The device is sealable and configured to apply vacuum to the vapor and sample, to cause deposition of the vapor into the pumice stone samples.

Various embodiments of the present invention are directed towards a system and method relating to depositing vapor in a sample. For example, a device includes a vapor source chamber configured to contain a vapor source material to generate vapor. An activation chamber is configured to contain a sample. The activation chamber is in fluid communication with the vapor source chamber to receive the vapor. A permeable separator divides the vapor source chamber and the activation chamber, and isolates the sample in the activation chamber while allowing vapor to pass between the vapor source chamber and the activation chamber. The device is sealable and configured to apply vacuum to the vapor and sample, to cause deposition of the vapor into the pumice stone samples.

A method may produce a ceramic part with a mother-of-pearl effect, in particular for watchmaking. Such methods may include: forming a ceramic body; depositing a layer of an oxy-nitride component of the OxNy type on at least a portion of the ceramic body; and oxidizing at least a portion of the oxy-nitride layer, preferably by heating.

A method may produce a ceramic part with a mother-of-pearl effect, in particular for watchmaking. Such methods may include: forming a ceramic body; depositing a layer of an oxy-nitride component of the OxNy type on at least a portion of the ceramic body; and oxidizing at least a portion of the oxy-nitride layer, preferably by heating.

A coated component, along with methods of its formation and use, is provided. The coated component includes a ceramic matrix composite (CMC) substrate comprising silicon carbide and having a mullite bondcoat on its surface. The mullite bondcoat includes an oxygen getter phase contained within a mullite phase. For example, the mullite bondcoat may include 60% to 98% by volume of the mullite phase. An environmental barrier coating is on the mullite bondcoat.

A coated component, along with methods of its formation and use, is provided. The coated component includes a ceramic matrix composite (CMC) substrate comprising silicon carbide and having a mullite bondcoat on its surface. The mullite bondcoat includes an oxygen getter phase contained within a mullite phase. For example, the mullite bondcoat may include 60% to 98% by volume of the mullite phase. An environmental barrier coating is on the mullite bondcoat.

A cubic boron nitride sintered body including cubic boron nitride and a binder phase, wherein a content of the cubic boron nitride is 40 volume % or more and 70 volume % or less; a content of the binder phase is 30 volume % or more and 60 volume % or less; an average particle size of the cubic boron nitride is 0.1 μm or more and 3.0 μm or less; the binder phase contains TiN and/or TiCN, and TiB.sub.2 and contains substantially no AIN and/or Al.sub.2O.sub.3, the binder phase has a TiB.sub.2 (101) plane that shows a maximum peak position (2θ) in X-ray diffraction of 44.2° or more; and I.sub.2/I.sub.1 is 0.10 or more and 0.55 or less, where denotes an X-ray diffraction intensity of a (111) plane of the cubic boron nitride and I.sub.2 denotes an X-ray diffraction intensity of a (101) plane of TiB.sub.2 of the binder phase.