Patent classifications
C04B41/5006
Aircraft brake disc materials and methods
The present disclosure provides methods related to infiltration of aircraft brake discs with titanium-containing compounds. In various embodiments, a method of making a self-coating carbon/carbon composite member may comprise infiltrating a carbonized fiber preform with a titanium-containing compound, drying the carbonized fiber preform, annealing the carbonized fiber preform at a third temperature, and densifying the carbonized fiber preform.
Silicon compositions containing boron and methods of forming the same
A compound is provided that has the formula: Ln.sub.4-x-zB.sub.xD.sub.zM.sub.2-n-yA.sub.nB.sub.yO.sub.9, where Ln comprises La, Ce, Pr, Nd, Pm, Sm, or a mixture thereof; x is 0 to about 2; D is La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or a mixture thereof, where: D is not equal to Ln; if D is La, Ce, Pr, Nd, Pm, Sm, or a mixture thereof, then z is 0 to less than 4; if D is Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or a mixture thereof, then z is 0 to about 2; M comprises Ga, Al, or a combination thereof; A comprises Fe, In, or a combination thereof; n is 0 to about 1; y is 0 to about 1; and x+y is greater than 0. In one embodiment, a composition is generally provided that includes a silicon-containing material and such a boron-doped refractory compound.
Silicon compositions containing boron and methods of forming the same
A compound is provided that has the formula: Ln.sub.4-x-zB.sub.xD.sub.zM.sub.2-n-yA.sub.nB.sub.yO.sub.9, where Ln comprises La, Ce, Pr, Nd, Pm, Sm, or a mixture thereof; x is 0 to about 2; D is La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or a mixture thereof, where: D is not equal to Ln; if D is La, Ce, Pr, Nd, Pm, Sm, or a mixture thereof, then z is 0 to less than 4; if D is Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or a mixture thereof, then z is 0 to about 2; M comprises Ga, Al, or a combination thereof; A comprises Fe, In, or a combination thereof; n is 0 to about 1; y is 0 to about 1; and x+y is greater than 0. In one embodiment, a composition is generally provided that includes a silicon-containing material and such a boron-doped refractory compound.
SILICON COMPOSITIONS CONTAINING BORON AND METHODS OF FORMING THE SAME
A composition is generally provided that includes a silicon-containing material (e.g., silicon metal and/or a silicide) and a boron-doped refractory compound, such as about 0.001% to about 85% by volume of the boron-doped refractory compound (e.g., about 1% to about 60% by volume). In one embodiment, a bond coating on a surface of a ceramic component is generally provided with the bond coating including such a composition, with the silicon-containing material is silicon metal.
SILICON COMPOSITIONS CONTAINING BORON AND METHODS OF FORMING THE SAME
A composition is generally provided that includes a silicon-containing material (e.g., silicon metal and/or a silicide) and a boron-doped refractory compound, such as about 0.001% to about 85% by volume of the boron-doped refractory compound (e.g., about 1% to about 60% by volume). In one embodiment, a bond coating on a surface of a ceramic component is generally provided with the bond coating including such a composition, with the silicon-containing material is silicon metal.
Boron doped rare earth metal oxide compound
A compound is generally provided that has the formula: Ln.sub.3-xB.sub.xM.sub.5-yB.sub.yO.sub.12, where Ln comprises Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or a mixture thereof; x is 0 to about 1.5; M comprises Ga, In, Al, Fe, or a combination thereof; y is 0 to about 2.5; and x+y is greater than 0. A composition is also provided that includes a silicon-containing material (e.g., silicon metal and/or a silicide) and the boron-doped refractory compound having the formula described above, such as about 0.001% to about 85% by volume of the boron-doped refractory compound.
Boron doped rare earth metal oxide compound
A compound is generally provided that has the formula: Ln.sub.3-xB.sub.xM.sub.5-yB.sub.yO.sub.12, where Ln comprises Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or a mixture thereof; x is 0 to about 1.5; M comprises Ga, In, Al, Fe, or a combination thereof; y is 0 to about 2.5; and x+y is greater than 0. A composition is also provided that includes a silicon-containing material (e.g., silicon metal and/or a silicide) and the boron-doped refractory compound having the formula described above, such as about 0.001% to about 85% by volume of the boron-doped refractory compound.
Silicon compositions containing boron and methods of forming the same
A composition is generally provided that includes a silicon-containing material (e.g., silicon metal and/or a silicide) and a boron-doped refractory compound, such as about 0.001% to about 85% by volume of the boron-doped refractory compound (e.g., about 1% to about 60% by volume). In one embodiment, a bond coating on a surface of a ceramic component is generally provided with the bond coating including such a composition, with the silicon-containing material is silicon metal.
Silicon compositions containing boron and methods of forming the same
A composition is generally provided that includes a silicon-containing material (e.g., silicon metal and/or a silicide) and a boron-doped refractory compound, such as about 0.001% to about 85% by volume of the boron-doped refractory compound (e.g., about 1% to about 60% by volume). In one embodiment, a bond coating on a surface of a ceramic component is generally provided with the bond coating including such a composition, with the silicon-containing material is silicon metal.
Method for metalizing vias
A method for producing plated-through holes in printed circuit boards and to printed circuit boards produced in this manner.