The present invention generally relates to one or more methods for shaping or machining a rigid carrier sheet which in particular can include one or methods for forming cavities on one side of a rigid carrier sheet in a predetermined pattern for mounting electronic units.

Components and methods for forming the components are provided that promote adherence of environmental barrier coatings to surfaces of the components. The components include a substrate formed of a SiCSiC composite that includes boron, a surface of the substrate that has a concentration of the boron that is reduced relative to a remainder of the substrate, and an environmental barrier coating disposed on the surface of the substrate. The methods include providing the SiCSiC composite, performing a pretreatment process on a portion of the surface of the component to reduce the concentration of the boron at the surface, and forming the environmental barrier coating on the surface.

The present invention provides a dental workpiece that exhibits excellent machinability in a sintered state while possessing suitable strength for dental use. The present invention relates to a dental workpiece that exhibits an erosion rate of 8.0 m/g or more, or a product of erosion rate (m/g)average crystal grain size (m) greater than or equal to 15 m.sup.2/g when a spherical alumina slurry with an average particle diameter of 3.0 m is projected in a micro slurry-jet erosion test, and that has a biaxial flexural strength of 300 MPa or more as measured in compliance with ISO 6872:2015.

Specific organometallic compounds of Formula I: Q.sub.x-Sn-(A.sup.1R.sup.1.sub.z).sub.4-x or Formula II: Sn(NR.sup.2(CH.sub.2).sub.nA.sup.2).sub.2 useful for the deposition of high purity tin oxide, as well as methods of using such compounds are disclosed. Also disclosed are compositions of organometallic compounds useful for the deposition of high purity tin oxide that in combination improve stability. Also disclosed are processes for dry etching tin oxide with a particular etchant gas and/or a process for dry etching a substrate using a particular etchant gas with a specific additive.

A method of making a sintered ceramic body comprising the steps of disposing a ceramic powder inside an inner volume of a spark plasma sintering tool, wherein the tool comprises: a die comprising a sidewall comprising inner and outer walls, wherein the inner wall has a diameter defining the inner volume; upper and lower punches operably coupled with the die, wherein each of the punches have an outer wall defining a diameter less than the diameter of the die inner wall, thereby creating a gap between the punches and the inner wall when at least one of the punches are moved within the inner volume, and the gap is from 10 m to 70 m wide; creating vacuum conditions inside the inner volume; moving at least one of the punches to apply pressure to the ceramic powder while heating, and sintering; and lowering the temperature of the sintered body.

A method of dry etching a titanium carbide material of a substrate includes performing an oxidation step and a fluorination step. The oxidation step includes exposing the titanium carbide material to an oxidizing agent to form an oxidized layer including titanium oxide species and remove carbon from the titanium carbide material by forming volatilized carbon oxide species. The fluorination step includes exposing the titanium oxide species of the oxidized layer to a fluorinating agent to remove titanium from the titanium carbide material by forming volatilized fluorinated titanium oxide species. The method may be repeated as a cycle in situ within a processing chamber. The method may further include a substitution step that includes exposing a metallic fluoride species formed during the fluorination step to a substitution agent to remove metallic species from the titanium carbide material by forming volatilized metallic fluoride species.

Specific organometallic compounds of Formula I: Q.sub.x-Sn-(A.sup.1R.sup.1.sub.z).sub.4-x or Formula II: Sn(NR.sup.2(CH.sub.2).sub.nA.sup.2).sub.2 useful for the deposition of high purity tin oxide, as well as methods of using such compounds are disclosed. Also disclosed are compositions of organometallic compounds useful for the deposition of high purity tin oxide that in combination improve stability. Also disclosed are processes for dry etching tin oxide with a particular etchant gas and/or a process for dry etching a substrate using a particular etchant gas with a specific additive.