A method of manufacturing a semiconductor device includes forming a preliminary lower electrode layer on a substrate, the preliminary lower electrode layer including a niobium oxide; converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a nitridation process on the preliminary lower electrode layer; forming a dielectric layer on the first lower electrode layer; and forming an upper electrode on the dielectric layer.

Disclosed is a composition having nanoparticles or particles of a refractory metal, a refractory metal hydride, a refractory metal carbide, a refractory metal nitride, or a refractory metal boride, an organic compound consisting of carbon and hydrogen, and a nitrogenous compound consisting of carbon, nitrogen, and hydrogen. The composition, optionally containing the nitrogenous compound, is milled, cured to form a thermoset, compacted into a geometric shape, and heated in a nitrogen atmosphere at a temperature that forms a nanoparticle composition comprising nanoparticles of metal nitride and optionally metal carbide. The nanoparticles have a uniform distribution of the nitride or carbide.

The present invention relates to a process for producing a silicon carbide-containing body (100), characterized in that the process has the following process steps: a) providing a mixture (16) comprising a silicon source and a carbon source, the silicon source and the carbon source being present together in particles of a solid granular material; b) arranging a layer of the mixture (16) provided in process step a) on a carrier (12), the layer of the mixture (16) having a predefined thickness; and c) treating the mixture (16) arranged in process step b) over a locally limited area with a temperature within a range from 1400 C. to 2000 C. according to a predetermined three-dimensional pattern, the predetermined three-dimensional pattern being selected on the basis of the three-dimensional configuration of the body (100) to be produced. Such a process allows simple and inexpensive production even of complex structures from silicon carbide.

A golden ceramic includes: a ceramic matrix in a weight percentage of 80-99% and a colorant in a weight percentage of 1-20%, wherein the ceramic matrix includes zirconium oxide and yttrium oxide, and the colorant includes zirconium nitride.

A method of treating a carbon/carbon composite is provided. The method may include infiltrating a carbonized fibrous structure with hydrocarbon gas to form a densified fibrous structure. The method may include treating the densified fibrous structure with heat at a first temperature range from about 1600 to about 2400 C. to form a heat treated densified fibrous structure. The method may include infiltrating the heat treated densified fibrous structure with silicon to form a silicon carbide infiltrated fibrous structure.

A method is described for manufacturing a ceramic composite structure. The method includes wrapping ceramic fibers (22), such as SiC fibers, about the external surface of at least one form. The method further includes heating the wrapped fibers (22) to a temperature no greater than a first temperature, infiltrating voids (24) in the wrapped fibers (22) with the ceramic composite in a first vessel (12) at the first temperature, transferring the infiltrated wrapped fibers (22) from the first vessel (12) to a second vessel (14), distinct from the first vessel (12), and coating the infiltrated wrapped fibers (22) with the ceramic composite in the second vessel (14) at a second temperature, higher than the first temperature.

A process for producing an ordered martensitic iron nitride powder that is suitable for use as a permanent magnetic material is provided. The process includes fabricating an iron alloy powder having a desired composition and uniformity; nitriding the iron alloy powder by contacting the material with a nitrogen source in a fluidized bed reactor to produce a nitride iron powder; transforming the nitride iron powder to a disordered martensitic phase; annealing the disordered martensitic phase to an ordered martensitic phase; and separating the ordered martensitic phase from the iron nitride powder to yield an ordered martensitic iron nitride powder.

A method of manufacturing a ceramic matrix composite component may include introducing a gaseous precursor into an inlet portion of a chamber that houses a porous preform and introducing a gaseous mitigation agent into an outlet portion of the chamber that is downstream of the inlet portion of the chamber. The gaseous precursor may include methyltrichlorosilane (MTS) and the gaseous mitigation agent may include hydrogen gas. The introduction of the gaseous precursor may result in densification of the porous preform(s) and the introduction of the gaseous mitigation agent may shift the reaction equilibrium to disfavor the formation of harmful and/or pyrophoric byproduct deposits, which can accumulate in an exhaust conduit 340 of the system.

A method of forming a moisture-tolerant coating on a silicon carbide fiber includes exposing a silicon carbide fiber to a gaseous N precursor comprising nitrogen at an elevated temperature, thereby introducing nitrogen into a surface region of the silicon carbide fiber, and exposing the silicon carbide fiber to a gaseous B precursor comprising boron at an elevated temperature, thereby introducing boron into the surface region of the silicon carbide fiber. Silicon-doped boron nitride is formed at the surface region of the silicon carbide fiber without exposing the silicon carbide fiber to a gaseous Si precursor comprising Si. Thus, a moisture-tolerant coating comprising the silicon-doped boron nitride is grown in-situ on the silicon carbide fiber.

A method of fabricating a ceramic material, the method including forming a ceramic material by performing a first chemical reaction at least between a first powder of an intermetallic compound and a reactive gas phase, a liquid phase being present around the grains of the first powder during the first chemical reaction, the liquid gas phase being obtained from a second powder of a metallic compound by melting the second powder or as a result of a second chemical reaction between at least one element of the first powder and at least one metallic element of the second powder, a working temperature being imposed during the formation of the ceramic material, which temperature is low enough to avoid melting the first powder.