A metal oxynitride thin film having a perovskite structure, in which the metal oxynitride thin film has a composition represented by a compositional formula A.sub.1+BO.sub.x+N.sub.y wherein is larger than zero and 0.300 or less, x+ is larger than 2.450, and y is 0.300 or more and 0.700 or less, an AO structure having a layered structure parallel to a plane perpendicular to a c-axis of the perovskite structure and having a composition represented by a general formula AO, and the AO structure is bonded with the perovskite structure and incorporated in the perovskite structure.

A method for producing carbon or graphite foam parts with high purity level for high-temperature insulation under vacuum or protective gas, as insulating material or as filter material, includes the following steps: introducing dry, foamable starch (1) into an open-top container (2) having a round or angular cross section, until the base (3) of the container (2) is covered amply and uniformly with starch (1); introducing the container (2) partly filled with starch (1) into an oven (4), and heating the container (2) to a foaming temperature of >180? C. over a prolonged period of several hours to foam the starch (1), until the container (2) has filled completely with carbon foam (6); withdrawing the container (2) from the oven (4) and extracting the carbon foam (6) after sufficient cooling, and optionally portioning the carbon foam (6) into carbon foam parts (6.1).

Provided is an oxide semiconductor thin film for which only carrier concentration has been reduced while maintaining a high carrier mobility, as well as a manufacturing method therefor. Provided is an amorphous oxide semiconductor thin film that includes indium and gallium as oxides, further includes hydrogen, has a gallium content such that the molecular ratio Ga/(In+Ga) is 0.15 to 0.55, and has a hydrogen content as measured by secondary ion mass spectrometry of 1.010.sup.20 atoms/cm.sup.3 to 1.010.sup.22 atoms/cm.sup.3.

Methods of producing continuous (or discontinuous) boron carbide fibers. The method comprises reacting a continuous or discontinuous carbon fiber material and a boron oxide gas within a temperature range of from approximately 1400 C. to approximately 2200 C. Articles including such partially or fully converted fibers may be provided, including such reinforcing fibers in a matrix of ceramic (a CMC), in metal (a MMC), or other matrix (e.g., polymer, etc.).

A method of manufacturing a ceramic matrix composite component may include introducing a gaseous precursor into an inlet portion of a chamber that houses a porous preform and introducing a gaseous mitigation agent into an outlet portion of the chamber that is downstream of the inlet portion of the chamber. The gaseous precursor may include methyltrichlorosilane (MTS) and the gaseous mitigation agent may include hydrogen gas. The introduction of the gaseous precursor may result in densification of the porous preform(s) and the introduction of the gaseous mitigation agent may shift the reaction equilibrium to disfavor the formation of harmful and/or pyrophoric byproduct deposits, which can accumulate in an exhaust conduit 340 of the system.

A method of fabricating a ceramic material, the method including forming a ceramic material by performing a first chemical reaction at least between a first powder of an intermetallic compound and a reactive gas phase, a liquid phase being present around the grains of the first powder during the first chemical reaction, the liquid gas phase being obtained from a second powder of a metallic compound by melting the second powder or as a result of a second chemical reaction between at least one element of the first powder and at least one metallic element of the second powder, a working temperature being imposed during the formation of the ceramic material, which temperature is low enough to avoid melting the first powder.

A method of forming a moisture-tolerant coating on a silicon carbide fiber includes exposing a silicon carbide fiber to a gaseous N precursor comprising nitrogen at an elevated temperature, thereby introducing nitrogen into a surface region of the silicon carbide fiber, and exposing the silicon carbide fiber to a gaseous B precursor comprising boron at an elevated temperature, thereby introducing boron into the surface region of the silicon carbide fiber. Silicon-doped boron nitride is formed at the surface region of the silicon carbide fiber without exposing the silicon carbide fiber to a gaseous Si precursor comprising Si. Thus, a moisture-tolerant coating comprising the silicon-doped boron nitride is grown in-situ on the silicon carbide fiber.

Disclosed is a process of manufacturing a chemically reduced graphene oxide/silicon nanowire composite. The formation of the three-dimensional monolith and the chemical reduction of graphene oxide by a reducing agent selected from hydrazine hydrate, ethylene diamine and 1,4-diaminebutane are in one step. Also disclosed is a chemically reduced graphene oxide/silicon nanowire composite that can be obtained by the disclosed process. The composite is a three-dimensional monolith in which the two components are covalently linked each other, having a high degree of reduction with a C/O ratio of 1-50, preferably from 10 to 25, more preferably 16.7, having a porous structure and a high specific surface area of 50-5,000 m.sup.2/g, preferably 800-2,500 m.sup.2/g, more preferably 1,433 m.sup.2/g and having a low resistance to charge transfer from 0.1 to 5 , preferably from 0.3 to 1.5 . Also disclosed is a lithium-ion battery or a supercapacitor including the composite (or monolith).

A process for producing an ordered martensitic iron nitride powder that is suitable for use as a permanent magnetic material is provided. The process includes fabricating an iron alloy powder having a desired composition and uniformity; nitriding the iron alloy powder by contacting the material with a nitrogen source in a fluidized bed reactor to produce a nitride iron powder; transforming the nitride iron powder to a disordered martensitic phase; annealing the disordered martensitic phase to an ordered martensitic phase; and separating the ordered martensitic phase from the iron nitride powder to yield an ordered martensitic iron nitride powder.

The present invention relates to a process for producing a silicon carbide-containing body (100), characterized in that the process has the following process steps: a) providing a mixture (16) comprising a silicon source and a carbon source, the silicon source and the carbon source being present together in particles of a solid granular material; b) arranging a layer of the mixture (16) provided in process step a) on a carrier (12), the layer of the mixture (16) having a predefined thickness; and c) treating the mixture (16) arranged in process step b) over a locally limited area with a temperature within a range from 1400 C. to 2000 C. according to a predetermined three-dimensional pattern, the predetermined three-dimensional pattern being selected on the basis of the three-dimensional configuration of the body (100) to be produced. Such a process allows simple and inexpensive production even of complex structures from silicon carbide.