An MA-M.sub.2T spinel solid solution-reinforced magnesium oxide-based ceramic foam filter and a preparation therefor. The preparation method comprising: 1) preparing a ceramic slurry having a solid content of 60%-70% by dosing 15%-25% by mass of a nanometer alumina sol, 0.8%-1.5% by mass of a rheological agent, and the balance magnesium oxide ceramic powder comprising a nanometer titanium oxide sintering aid, and then adding deionized water and ball milling to mix until uniform, and then vacuum degassing the mixture; 2) soaking a polyurethane foam plastic template into the ceramic slurry, squeezing by a roller press the polyurethane foam plastic template to remove redundant slurry therein to make a biscuit, and drying the biscuit by heating it to 80° C.-120° C.; 3) putting the dried biscuit into a sintering furnace, elevating the temperature to 1400° C.-1600° C. and performing a high temperature sintering, cooling to the room temperature with the furnace to obtain the magnesium oxide-based ceramic foam filter.

The present invention relates to a method for preparing a fully ceramic capsulated nuclear fuel material containing three-layer-structured isotropic nuclear fuel particles coated with a ceramic having a composition which has a higher shrinkage than a matrix in order to prevent cracking of ceramic nuclear fuel, wherein the three-layer-structured nuclear fuel particles before coating is included in the range of between 5 and 40 fractions by volume based on after sintering. More specifically, the present invention provides a composition for preparing a fully ceramic capsulated nuclear fuel containing three-layer-structured isotropic particles coated with the substance which includes, as a main ingredient, a silicon carbine derived from a precursor of the silicon carbide wherein a condition of ΔL.sub.c>ΔL.sub.m at normal pressure sintering is created, where the sintering shrinkage of the coating layer of the three-layer-structured isotropic nuclear fuel particles is ΔL.sub.c and the sintering shrinkage of the silicon carbide matrix is ΔL.sub.m; material produced therefrom; and a method for manufacturing the material. The residual porosity of the fully ceramic capsulated nuclear fuel material is 4% or less.

A member for a plasma processing device of the present disclosure is a member for a plasma processing device made of ceramics and having a shape of a cylindrical body with a through hole in an axial direction. The ceramics is mainly composed of aluminum oxide, and has a plurality of crystal grains and a grain boundary phase that is present between the crystal grains. An inner peripheral surface of the cylindrical body has an arithmetic average roughness Ra of 1 μm or more and 3 μm or less, and an arithmetic height Rmax of 30 μm or more and 130 μm or less.

Provided is a dielectric ceramic composition including a first component and a second component, wherein the first component comprises an oxide of Ca of 0.00 mol % to 35.85 mol % an oxide of Sr of 0.00 mol % to 47.12 mol %, an oxide of Ba of 0.00 mol % to 51.22 mol %, an oxide of Ti of 0.00 mol % to 17.36 mol %, an oxide of Zr of 0.00 mol % to 17.36 mol %, an oxide of Sn of 0.00 mol % to 2.60 mol %, an oxide of Nb of 0.00 mol % to 35.32 mol %, an oxide of Ta of 0.00 mol % to 35.32 mol %, and an oxide of V of 0.00 mol % to 2.65 mol %, and the second component includes at least (a) an oxide of Mn of 0.005% by mass to 3.500% by mass and (b) an oxide of Cu and/or an oxide of Ru.

The present invention relates to a SiC composite and a method for manufacturing the same. More particularly, the present invention relates to a slurry composition for ceramic matrix composites which can not only reduce the number of precursor impregnation pyrolysis (PIP) cycles but also be useful in the PIP process to increase hardness, thermal stability, and relative density.

Disclosed herein is a sintered ceramic body comprising from 90% to 99.9% by volume of polycrystalline yttrium aluminum garnet (YAG) as measured using XRD and image processing methods and a volumetric porosity of from 0.1 to 4% as calculated from density measurements performed in accordance with ASTM B962-17. The sintered ceramic body may have a total purity of 99.99% and greater and a grain size of from 0.3 to 8 μm. A method of making the sintered ceramic body is also disclosed.

Embodiments relate to a method for fabricating a sintered sodium-ion material. The method involves mixing a parent phase sodium-ion compound with a secondary transient phase to form a powder mixture. The method involves applying pressure and heat above a melting point or boiling point of the secondary transient phase to drive dissolution at particle contacts and subsequent precipitation at newly formed grain boundaries. The method involves generating a sintered sodium-ion material with >90% relative density.

A method for producing a zirconia sintered body includes: heating a zirconia molded body or a zirconia pre-sintered body, the heating includes a temperature increasing step, and a rate of temperature increase in a temperature region from a temperature at which the zirconia starts to shrink to a temperature at which the zirconia finishes shrinking in the temperature increasing step is adjusted to enable the zirconia molded body or the zirconia pre-sintered body to shrink at substantially a constant rate during temperature increase in each of zones of when the temperature region is evenly divided into a plurality of zones of specific temperature ranges.

A dielectric composition includes dielectric particles, grain boundary phases, and segregations. The dielectric particles each include a perovskite compound represented by ABO.sub.3 as a main component. The grain boundary phases are located between the dielectric particles. The segregations exist in a part of the grain boundary phases and include at least Al, Si, and O. A molar ratio (Al/(Al+Si)) of an Al content to a total content of Al and Si in the segregations is 0.45 or more and 0.75 or less.

In a silicon nitride substrate including a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, a plate thickness of the silicon nitride substrate is 0.4 mm or les, and a percentage of a number of the silicon nitride crystal grains including dislocation defect portions inside the silicon nitride crystal grains in a 50 μm×50 μm observation region of any cross section or surface of the silicon nitride sintered body is not less than 0% and not more than 20%. Etching resistance can be increased when forming the circuit board.