Provided is a method for manufacturing a composite body, the method including: a nitriding step of firing a boron carbide powder in a nitrogen atmosphere to obtain a fired product containing boron carbonitride; a sintering step of molding and heating a blend containing the fired product and a sintering aid to obtain a boron nitride sintered body including boron nitride particles and pores; and an impregnating step of impregnating the boron nitride sintered body with a resin composition, the composite body having the boron nitride sintered body and a resin filled in at least some of the pores of the boron nitride sintered body.

Provided is a boron nitride sintered body including: a plurality of coarse particles each having a length of 20 μm or more; and fine particles smaller than the plurality of coarse particles, in which, when viewed in a cross-section, the plurality of coarse particles intersect with each other. Provided is a method for manufacturing a boron nitride sintered body, the method including: a raw material preparation step of firing a mixture containing boron carbonitride and a boron compound in a nitrogen atmosphere to obtain lump boron nitride having an average particle diameter of 10 to 200 μm; and a sintering step of molding and heating a blend containing the lump boron nitride and a sintering aid to obtain a boron nitride sintered body including coarse particles each having a length of 20 μm or more in a cross-section and fine particles smaller than the coarse particles.

A Li ion conductor having a composition different from a conventional composition is provided. The Li ion conductor contains at least one selected from a group Q consisting of Ga, V, and Al, Li, La and O. A part of an Li site is optionally substituted with a metal element D, a part of an La site is optionally substituted with a metal element E, and parts of Ga, V and Al sites are optionally substituted with a metal element J. A mole ratio of an amount of Li to a total amount of La, the element E, Ga, V, Al, and the element J is not lower than 8.1/5 and not higher than 9.5/5. A mole ratio of a total amount of Ga, V, and Al to a total amount of La and the element E is not lower than 1.1/3 and not higher than 2/3.

A carbon-metal/alloy composite material includes a composition represented by (1-a)Sn.sub.1-xM.sup.1.sub.x+aM.sup.2+cC, wherein: M.sup.1 includes one or more transition metals, metals, or metalloids; M.sup.2 includes one or more transition metals, metals, or metalloids; x is 0≦x≦1; a is 0≦a≦1; and c is 0<c≦99. A method of forming the carbon-metal/alloy composite material includes the steps of dissolving one or more precursor materials in a solvent to form a solution; adding an organic carbon forming precursor to the solution to form a mixture; heating the mixture in an autoclave reactor for a prescribed period of time; separating solids formed from the mixture after the heating; washing the separated solids with a washing solvent; and heating the washed solids under a non-oxidizing atmosphere to form the carbon-metal/alloy composite material.

Provided are an oxide sintered compact whereby low carrier density and high carrier mobility are obtained when the oxide sintered compact is used to obtain an oxide semiconductor thin film by a sputtering method, and a sputtering target which uses the oxide sintered compact. This oxide sintered compact contains oxides of indium, gallium, and aluminum. The gallium content is from 0.15 to 0.49 by Ga/(In+Ga) atomic ratio, and the aluminum content is from 0.0001 to less than 0.25 by Al/(In+Ga+Al) atomic ratio. A crystalline oxide semiconductor thin film formed using this oxide sintered compact as a sputtering target is obtained at a carrier density of 4.0×10.sup.18 cm.sup.−3 or less and a carrier mobility of 10 cm.sup.−2V.sup.−1sec.sup.−1 or greater.

A process of forming a sintered article includes heating a green portion of a tape of polycrystalline ceramic and/or minerals in organic binder at a binder removal zone to a temperature sufficient to pyrolyze the binder; horizontally conveying the portion of tape with organic binder removed from the binder removal zone to a sintering zone; and sintering polycrystalline ceramic and/or minerals of the portion of tape at the sintering zone, wherein the tape simultaneously extends through the removal and sintering zones.

The present invention provides means capable of satisfactorily exhibit the properties inherent in the inorganic particle and the constituent material of the coating layer, such as obtaining high dispersibility and high mechanical properties in the coated particle that contains the inorganic particle having at least the inorganic substance capable of forming an inorganic oxide on a surface, and the coating layer with which the inorganic particle is coated. The present invention relates to a coated particle that contains an inorganic particle having at least an inorganic substance capable of forming an inorganic oxide on a surface, and a coating layer with which the inorganic particle is coated, in which the amount of the inorganic oxide per unit surface area of the inorganic particle does not exceed 0.150 mg/m.sup.2.

A sintered body of the present invention contains yttrium oxyfluoride. The yttrium oxyfluoride is preferably YOF and/or Y.sub.5O.sub.4F.sub.7. The sintered body of the present invention preferably contains 50% by mass or more of yttrium oxyfluoride. The sintered body of the present invention has a relative density of preferably 70% or more and an open porosity of preferably 10% or less. Furthermore, the sintered body of the present invention has a three-point bending strength of preferably 10 MPa or more and 300 MPa or less.

There are provided a cubic boron nitride sintered body having a surface also excellent in adhesiveness to a ceramic coating film, while having excellent wear resistance and defect resistance, and a manufacturing method thereof, and a tool. The cubic boron nitride sintered body of the present invention includes 60.0 to 90.0% by volume of cubic boron nitride, the remainder being a binder phase, wherein the binder phase contains: at least any of a nitride, a boride, and an oxide of Al; at least any of a carbide, a nitride, a carbonitride, and a boride of Ti; and a compound represented by the following formula (1):

W.sub.2Ni.sub.xCo.sub.(1-x)B.sub.2(0.40≤x<1)  (1)

A method of depositing silicon carbide on a preform to form a ceramic matrix composite comprises placing the preform into a reaction vessel, removing air from the reaction vessel and backfilling the reaction vessel with an inert gas to an operating pressure. The reaction vessel and the preform are heated to an operating temperature. A carrier gas and precursor materials are heated to a preheat temperature outside of the reaction vessel. The carrier gas and the precursor materials are introduced to the reaction vessel in a specified ratio. Off gasses, the precursor materials that are unspent, and the carrier gas are removed from the reaction vessel to maintain the specified ratio of the precursor materials in the reaction vessel.