Cold sintering of materials includes using a process of combining at least one inorganic compound, e.g., ceramic, in particle form with a solvent that can partially solubilize the inorganic compound to form a mixture; and applying pressure and a low temperature to the mixture to evaporate the solvent and densify the at least one inorganic compound to form sintered materials.

Set forth herein are processes and materials for making ceramic thin films by casting ceramic source powders and precursor reactants, binders, and functional additives into unsintered thin films and subsequently sintering the thin films under controlled atmospheres and on specific substrates.

An oxide superconductor of an embodiment includes an oxide superconductor layer having a continuous Perovskite structure including rare earth elements, barium (Ba), and copper (Cu). The rare earth elements include a first element which is praseodymium, at least one second element selected from the group consisting of neodymium, samarium, europium, and gadolinium, at least one third element selected from the group consisting of yttrium, terbium, dysprosium, and holmium, and at least one fourth element selected from the group consisting of erbium, thulium, ytterbium, and lutetium. When the number of atoms of the first element is N(PA), the number of atoms of the second element is N(SA), and the number of atoms of the fourth element is N(CA), 1.5(N(PA)+N(SA))N(CA) or 2(N(CA)N(PA))N(SA) is satisfied.

An oxide superconductor of an embodiment includes an oxide superconductor layer having a continuous Perovskite structure containing rare earth elements, barium (Ba), and copper (Cu). The rare earth elements contain a first element which is praseodymium (Pr), at least one second element selected from the group consisting of neodymium (Nd), samarium (Sm), europium (Eu), and gadolinium (Gd), at least one third element selected from the group consisting of yttrium (Y), terbium (Tb), dysprosium (Dy), and holmium (Ho), and at least one fourth element selected from the group consisting of erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu).

A method for producing a ceramic converter element is provided. The method includes providing a phosphor as a starting material, mixing the phosphor and at least one metal oxide powder to form a mixture, and processing the mixture to form a ceramic converter material in which the phosphor is embedded in a ceramic matrix. Further, an optoelectronic component with a ceramic converter element and a ceramic converter element are provided.

There are provided an oxide sintered material and a method of manufacturing the same as well as an oxide semiconductor film. The oxide sintered material contains In, W and Zn, includes an In.sub.2O.sub.3 crystal phase and an In.sub.2(ZnO).sub.mO.sub.3 crystal phase (m represents a natural number), and an average number of oxygen atoms coordinated to an indium atom is 3 or more and less than 5.5. The oxide semiconductor film contains In, W and Zn. The oxide semiconductor film is amorphous, and an average number of oxygen atoms coordinated to an indium atom is 2 or more and less than 4.5.

A dielectric porcelain composition having a main component a perovskite compound represented by ABO.sub.3, and the perovskite compound at least contains Ti and a volatile element which forms a solid solution at a B site, and may also contain Zr. The dielectric porcelain composition contains the volatile element in an amount larger than 0 part by mol and less than or equal to 0.2 part by mol with respect to 100 parts by mol of a total of the Ti and the Zr, and has a ratio of an A-site element to the total of the Ti and the Zr of 1.00 or more and 1.04 or less as a molar ratio.

A dielectric composition including a complex oxide represented by a general formula of A.sub.aB.sub.bC.sub.4O.sub.15+ as a main component, in which A at least includes Ba, B at least includes Zr, C at least includes Nb, a is 3.05 or more, and b is 1.01 or more.

An object of the present invention is to provide an SiC ceramics having an excellent environmentally resistant coating.

An SiC ceramics comprising a metal oxide, the SiC ceramics comprising a surface modification layer containing a silicate, the surface modification layer being derived from a raw material forming the SiC ceramics, which is a matrix.

A multilayer ceramic capacitor includes: a ceramic body including dielectric layers and first and second internal electrodes disposed to face each other with each of the dielectric layers interposed therebetween; and first and second external electrodes disposed on external surfaces of the ceramic body and electrically connected to the first and second internal electrode, respectively, wherein the dielectric layer includes dielectric grains having a core-shell structure including a core and a shell, and a domain wall is disposed in the shell.