In a silicon nitride substrate including a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, a plate thickness of the silicon nitride substrate is 0.4 mm or les, and a percentage of a number of the silicon nitride crystal grains including dislocation defect portions inside the silicon nitride crystal grains in a 50 μm×50 μm observation region of any cross section or surface of the silicon nitride sintered body is not less than 0% and not more than 20%. Etching resistance can be increased when forming the circuit board.

A polycrystalline super hard construction comprises a body of polycrystalline super hard material and a substrate bonded to the body along an interface. The substrate a first end surface forming the interface, the first end surface comprising a projection extending from the body of the substrate into the body of super hard material towards the cutting face, the body of polycrystalline material extending around the projection. The body of polycrystalline material comprises a first region more thermally stable than a second region, the first region comprising an annular portion located around the projection, the second region extending between and bonding the first region to the substrate. The first region has a thickness from the cutting face along the peripheral side edge to the interface of at least around 3 mm and a portion of the projection has a thickness measured in a plane extending along the longitudinal axis of at least around 3 mm.

The present application discloses a method for fabricating a ceramic heating body with a porous heating film, which relates to technical field of fabricating method of heating body; the method including mixing, ball-milling, defoaming, molding and drying, sintering, paraffin filling, machining, coating, metalizing sintering, and electrode leading; the beneficial effects of the present application is simple in whole fabricating method, and by using a box furnace to sinter the green body under an oxidizing atmosphere and normal pressure, the fabricated ceramic heating body is heated uniformly and the heating efficiency is high.

An oxide sintered body may include zinc, magnesium, a positive trivalent or positive tetravalent metal element X, and oxygen as constituent elements. The atomic ratio of the metal element X to the sum of the zinc, the magnesium, and the metal element X [X/(Zn+Mg+X)] may be 0.0001 or more and 0.6 or less. The atomic ratio of the magnesium to the sum of the zinc and the magnesium [Mg/(Zn+Mg)] may be 0.25 or more and 0.8 or less.

A zirconia ceramic includes the following elements: 60.5-70.5 wt % of Zr, 2.5-5.45 wt % of Y, 0.05-2.65 wt % of Al, 0.015-1.07 wt % of Si, and 0.34-2.8 wt % of M. M includes at least one of Nb or Ta. The zirconia ceramic has a phase composition which includes tetragonal zirconia, alumina and zirconium silicate. The total content of alumina and zirconium silicate is 0.2-12 wt %, and the content of the tetragonal zirconia is 84-99.3 wt %. The tetragonal zirconia includes a solid solution of zirconia formed with yttrium oxide and M.sub.xO.sub.y, x satisfies 1≤x≤3, and y satisfies 3≤y≤6.

A method includes molding a raw material powder containing a ceramic powder and a thermoplastic resin having a glass transition temperature higher than room temperature into a shape by isostatic pressing and in which a raw material powder slurry is prepared by adding the ceramic powder and the thermoplastic resin to a solvent so that the thermoplastic resin is 2% by weight or more and 40% by weight or less with respect to a total weight of the ceramic powder and the thermoplastic resin, a cast-molded body is to formed by wet-casting the raw material powder slurry into a shape, dried, and subjected to first-stage isostatic press molding at a temperature lower than the glass transition temperature of the thermoplastic resin, then this first-stage press-molded body is heated to the glass transition temperature of the thermoplastic resin or above, and warm isostatic press (WIP) molding is performed.

Set forth herein are garnet material compositions, e.g., lithium-stuffed garnets and lithium-stuffed garnets doped with alumina, which are suitable for use as electrolytes and catholytes in solid state battery applications. Also set forth herein are lithium-stuffed garnet thin films having fine grains therein. Disclosed herein are novel and inventive methods of making and using lithium-stuffed garnets as catholytes, electrolytes and/or anolytes for all solid state lithium rechargeable batteries. Also disclosed herein are novel electrochemical devices which incorporate these garnet catholytes, electrolytes and/or anolytes. Also set forth herein are methods for preparing novel structures, including dense thin (<50 um) free standing membranes of an ionically conducting material for use as a catholyte, electrolyte, and, or, anolyte, in an electrochemical device, a battery component (positive or negative electrode materials), or a complete solid state electrochemical energy storage device. Also, the methods set forth herein disclose novel sintering techniques, e.g., for heating and/or field assisted (FAST) sintering, for solid state energy storage devices and the components thereof.

An electrode heat treatment device and associated method for fabricating an electrode are described, and include forming a workpiece, including coating a current collector with a slurry. The workpiece is placed on a first spool, and the first spool including the workpiece is placed in a sealable chamber, wherein the sealable chamber includes the first spool, a heat exchange work space, and a second spool. An inert environment is created in the sealable chamber. The workpiece is subjected to a multi-step continuous heat treatment operation in the inert environment, wherein the multi-step continuous heat treatment operation includes continuously transferring the workpiece through the heat exchange work space between the first spool and the second spool and controlling the heat exchange work space to an elevated temperature.

The ceramic material element includes a main phase of orthorhombic perovskite-structure and a secondary phase due to a heat treatment within 700° C. to 850° C. for a first period followed by a second period within 1140° C. to 1170° C., from a mixture of materials A1, A2, A3, A4 and A5 excluding lead, the materials A1, A2, A3, A4 and A5 having molar ratios R1, R2, R3, R4 and R5, respectively, where the material A1 comprises potassium, the material A2 comprises sodium, the material A3 comprises barium, the material A4 comprises niobium, and the material A5 comprises nickel, and the molar ratio R1 is in a range 0.29-0.32, the molar ratio R2 is in a range 0.20-0.23, the molecular ratio R3 is in a range 0.01-0.02, the molar ratio R4 is in a range 0.54-0.55, and the molar ratio R5 is in a range 0.006-0.011, while a relative ratio of R1/R2 is in the range 1.24-1.52, and a relative ratio of R4/R2 is in the range 2.32-2.62. The ceramic material element converts optical radiation energy and mechanical vibration energy into electric energy.

A silicon nitride sintered body includes a silicon nitride crystal grains and grain boundary phases. Further, when D stands for width of the silicon nitride sintered body before being subjected to surface processing, relations between an average grain diameter dA and an average aspect ratio rA of the silicon nitride crystal grain in a first region from an outermost surface to a depth of 0 to 0.01D and an average grain diameter dB and an average aspect ratio rB of the silicon nitride crystal grain in a second region inside the first region satisfy the inequalities:

0.8≤ dA/dB≤ 1.2; and

0.8≤ rA/rB≤ 1.2.