Disclosed herein are ceramic materials comprising a ceramic phase and a glass phase and at least one of a reduced alkali content or a reduced iron content. Ceramic materials having relatively low creep rates are also disclosed herein, as well as glass forming bodies comprising such materials, and methods for making glass articles using such forming bodies. Refractory bricks for constructing glass manufacturing vessels are also disclosed. Methods for treating ceramic materials to reduce at least one of the alkali or iron content are further disclosed herein.

A polycrystalline diamond comprising diamond particles, wherein: the content of the diamond particles is more than 99% by volume based on the total volume of the polycrystalline diamond; the median diameter d50 of the diamond particles is 10 nm or more and 200 nm or less; and the dislocation density of the diamond particles is 2.0?10.sup.15 m.sup.?2 or more and 4.0?10.sup.16 m.sup.?2 or less.

The present disclosure generally relates to silicon carbide crystals which may be used in optical applications, and to methods for producing the same. In one form, a composition includes an aluminum doped silicon carbide crystal having residual nitrogen and boron impurities. The concentration of aluminum in the silicon carbide crystal is greater than the combined concentrations of nitrogen and boron in the silicon carbide crystal, and the silicon carbide crystal includes an optical absorption coefficient of less than about 0.4 cm.sup.?1 at a wavelength in a range between about 400 nm to about 800 nm.

A method of producing low CTE graphite electrodes from needle coke formed from a coal tar distillate material having a relatively high initial boiling point.

In an embodiment, a magneto-dielectric material comprises a polymer matrix; a plurality of hexaferrite microfibers; wherein the magneto-dielectric material has a permeability of 2.5 to 7, or 2.5 to 5 in an x-direction parallel to a broad surface of the magneto-dielectric material and a magnetic loss tangent of less than or equal to 0.03; as determined at 1 GHz, or 1 to 2 GHz.

The present disclosure generally relates to a physical vapor transport system including a chamber, a growth crucible positioned within the chamber, the growth crucible sealable with a growth crucible lid, and a doping capsule positioned within the growth crucible. The doping capsule includes an outer crucible fitted with an outer crucible lid, an inner crucible fitted with an inner crucible lid, the inner crucible fitted with the inner crucible lid positioned within the outer crucible, and a capillary channel formed by a first aperture in the outer crucible lid and a second aperture in the inner crucible lid.

An optical device includes a vanadium compensated, high resistivity, SiC single crystal of 6H or 4H polytype, for transmitting light having a wavelength in a range of from 420 nm to 4.5 ?m. The device may include a window, lens, prism, or waveguide. A system includes a source for generating light having a wavelength in a range of from 420 nm to 4.5 ?m, and a device for receiving and transmitting the light, where the device includes a vanadium compensated, high resistivity, SiC single crystal of 6H or 4H polytype. The disclosure also relates to crystals and methods for optical applications, including an aluminum doped SiC crystal having residual nitrogen and boron impurities, where the aluminum concentration is greater than the combined concentrations of nitrogen and boron, and where an optical absorption coefficient is less than about 0.4 cm.sup.?1 at a wavelength between about 400 nm to about 800 nm.

A polycrystalline diamond comprising diamond particles, wherein: the content of the diamond particles is more than 99% by volume based on the total volume of the polycrystalline diamond: the median diameter d50 of the diamond particles is 10 nm or more and 200 nm or less; and the dislocation density of the diamond particles is 0.1?10.sup.15 m.sup.?2 or more and less than 2.0?10.sup.15 m.sup.?2.

A silicide-based composite material is disclosed, comprising a silicide of Mo, B, W, Nb, Ta, Ti, Cr, Co, Y, or a combination thereof, Si3N4, and at least an oxide, as well as and a process for producing the same.

The present invention relates to a method for production of graphite bodies. Carbon bodies are formed from a mixture of electric calcined coke particles calcined at a temperature between 1200 and 3000 C. and a binder where the coke particles have sulphur-and nitrogen content varying between 0 and 1.5% by weight and where the coke particles have an average sulphur content less than 0.6% by weight and a nitrogen content of less than 0.6% by weight, baking of the carbon bodies at a temperature between 700 and 1400 C. and graphitizing of the baked carbon bodies at a temperature above 2300 C.