A composite material part having a matrix made of ceramic, at least for the most part, is fabricated by a method including making a fiber preform from silicon carbide fibers containing less than 1 at % oxygen; depositing a boron nitride interphase on the fibers of the preform, deposition being performed by chemical vapor infiltration at a deposition rate of less than 0.3 m/h; performing heat treatment to stabilize the boron nitride of the interphase, after the interphase has been deposited, without prior exposure of the interphase to an oxidizing atmosphere and before depositing matrix layer on the interphase, the heat treatment being performed at a temperature higher than 1300 C. and not less than the maximum temperature to be encountered subsequently until the densification of the preform with the matrix has been completed; and thereafter, densifying the perform with a matrix that is made of ceramic, at least for the most part.

A polycrystalline super hard construction comprises a body of polycrystalline diamond (PCD) material and a plurality of interstitial regions between inter-bonded diamond grains forming the polycrystalline diamond material. The body of PCD material comprises a working surface positioned along an outside portion of the body, and a first region adjacent the working surface, the first region being a thermally stable region. The first region and/or a further region and/or the body of PCD material has/have an average oxygen content of less than around 300 ppm. A method of forming such a construction is also disclosed.

A process for producing a highly oriented graphene oxide (GO) film, comprising: (a) preparing either a GO dispersion having GO sheets dispersed in a fluid medium or a GO gel having GO molecules dissolved in a fluid medium; (b) dispensing the GO dispersion or gel onto a surface of an application roller rotating in a first direction to form an applicator layer of GO and transferring the applicator layer to a surface of a supporting film driven in a second direction opposite to the first direction to form a wet layer of GO on the supporting film; and (c) removing said fluid medium from the wet layer of GO to form a dried layer of GO having an inter-planar spacing d.sub.002 of 0.4 nm to 1.2 nm and an oxygen content no less than 5% by weight. This dried GO layer may be heat-treated to produce a graphitic film.

High-purity gallium nitride particles having a low oxygen content suitable for a raw material or a sintered body is provided. Gallium nitride particles characterized in that the oxygen content is 0.5 at % or less and the total impurity amount of elements, Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn and Cd, is less than 10 wtppm are used.

The purpose of the present is to provide a modified AlN source for suppressing downfall defects. This manufacturing method of a modified aluminum nitride source involves a heat treatment step for heat treating an aluminum nitride source and generating an aluminum nitride sintered body.

An antiballistic armor-plating component, includes a ceramic body made of a material comprising, as percentages by volume, between 35% and 55% of silicon carbide, between 20% and 50% of boron carbide, between 15% and 35% of a metallic silicon phase or of a metallic phase including silicon.

Color unevenness generated on a surface of a silicon nitride substrate is reduced. A silicon nitride substrate formed by nitriding silicon containing in a sheet-shaped green body includes a first surface and a second surface opposite to the first surface. In this case, when color difference between a center and an edge of at least one surface of the first surface and the second surface is expressed to be E*ab, a relation E*ab1.5 is established.

Provided is at least one of a gallium nitride sintered body; a method for industrially producing the sintered body; a sputtering target including the sintered body; and a method for depositing a film with the sputtering target. With the gallium nitride sintered body, a sputtered film can be deposited at a faster deposition rate than with a gallium nitride sintered body produced by a hot-pressing process. A gallium nitride sintered body has a standard deviation of a porosity of 1.0% or less as determined from a scanning electron microscope image of a cross section of the gallium nitride sintered body.

Provided are gallium nitride particles that have a low oxygen content and a high moldability and allow a gallium nitride sputtering target having a high density and a high strength to be produced. By causing a mixed powder of gallium oxide and gallium nitride to react at a temperature of 1000-1100 C. such that an ammonia reaction amount per hour is 1 or more times (by mole) an amount of gallium charged, gallium nitride particles are obtained of which an oxygen content is 1 atm % or less, an average particle size of primary particles is 5 m or more, and a particle size of a range of 10 area % from smallest particles of a particle size distribution (10% particle size) is 3 m or less.