A process for depositing a coating on short fibres of carbon or silicon carbide from a coating precursor, the short fibres having a length of between 50 m and 5 mm, the process including at least heating the short fibres by placing a mixture including the fibres and a liquid phase of the coating precursor in a microwave field so as to bring the surface of the fibres to a temperature allowing the coating on the fibres from the coating precursor to be formed by calefaction.

A translucent polycrystalline cubic boron nitride body is provided. It comprises no more than 2 weight % hexagonal boron nitride grains and has an absorption coefficient of less than 100 cm.sup.1 at a wavelength of 1064 nm.

It is an object of the present disclosure to provide a thin-film carbon foam and a method of manufacture the same. It is another object of the present disclosure to provide a stack carbon foam having fewer through holes and a method of manufacturing the same. The carbon foam of the present disclosure is, for example, a stack carbon foam being a stack of at least two monolayer carbon foams stacked one another, each monolayer carbon foam comprising linear portions and node portions joining the linear portions, or a carbon foam comprising linear portions and node portions joining the linear portions, wherein the ratio of the number of large through holes having a diameter of 1 mm or more to the surface area of the carbon foam is 0.0003/mm.sup.2 or less.

A heater for a semiconductor manufacturing apparatus, the heater includes an AlN ceramic substrate and a heating element embedded inside the AlN ceramic substrate. The AlN ceramic substrate contains O, C, Ti, Ca, and Y as impurity elements, includes an yttrium aluminate phase as a crystal phase, and has a Ti/Ca mass ratio of 0.13 or more, and a TiN phase is not detected in an XRD profile measured with Cu K- radiation.

A tungsten silicide target capable of suppressing the occurrence of particles during sputtering is provided by a method different from conventional methods. The tungsten silicide target includes not more than 5 low-density semi-sintered portions having a size of 50 m or more per 80000 mm.sup.2 on the sputtering surface.

A heater for a semiconductor manufacturing apparatus, the heater includes an AlN ceramic substrate and a heating element embedded inside the AlN ceramic substrate. The AlN ceramic substrate contains O, C, Ti, Ca, and Y as impurity elements, includes an yttrium aluminate phase as a crystal phase, and has a Ti/Ca mass ratio of 0.13 or more, and a TiN phase is not detected in an XRD profile measured with Cu K- radiation.

Aluminum nitride particles used as a material of an aluminum nitride sintered compact are disclosed. The aluminum nitride particles may have a same crystal orientation. The aluminum nitride particles each have an aspect ratio of 3 or more, a plate-like shape, a planar length of 0.6 m or more and 20 m or less, and a thickness length of 0.05 m or more and 2 m or less.

Provided are a method for manufacturing a phosphor ceramic that emits light when excited by excitation light, and a method for manufacturing a light-emitting device. The method for manufacturing a phosphor ceramic includes preparing a precursor that is either a molded body containing aluminum nitride or a sintered body containing aluminum nitride, and producing an aluminum nitride phosphor ceramic having a content of europium in a range from greater than 0.03 mass % to 1.5 mass % by bringing the precursor into contact with a gas containing europium.

It is difficult for a CrSi-based sintered body composed of chromium silicide (CrSi.sub.2) and silicon (Si) to have high strength. Provided is a CrSi-based sintered body including Cr (chromium) and silicon (Si), in which the crystal structure attributed by X-ray diffraction is composed of chromium silicide (CrSi.sub.2) and silicon (Si), a CrSi.sub.2 phase is present at 60 wt % or more in a bulk, a density of the sintered body is 95% or more, and an average grain size of the CrSi.sub.2 phase is 60 ?m or less.

The sintered body including boron carbide, wherein the sintered body includes a zone, in which a volume ratio of grains having a grain size of greater than 30 ?m and 60 ?m or less is in a range of 50% to 70% based on a total volume of grains, as observed on a surface of the sintered body, is disclosed.