A base plate containing a having a top and a bottom and comprising a beryllium oxide composition containing at least 95 wt % beryllium oxide and optionally fluorine/fluoride ion. The base plate demonstrates a clamping pressure of at least 133 kPa at a temperature of at least 600° C. and a bulk resistivity greater than 1×10.sup.5 ohm-m at 800° C.

An oxide superconductor includes: REBa.sub.2Cu.sub.3O.sub.7-x (RE being one element selected from a “RE element group” of Pr, Nd, Sm, Eu, Gd, Y, Tb, Dy, Ho, Er, Tm, Yb, and Lu). The RE includes at least three types of metallic elements (M1, M2, and M3), and the three types of metallic elements are any element of the RE element group selected in order. In an oxide system satisfying R(M1)≤20 mol % and R(M2)≥60 mol % and R(M3)≤20 mol %, R(M1) being an average metallic element ratio of M1 in M1+M2+M3, SD(Ms)>0.15 is satisfied at a position at 50% of an average film thickness of a cross section including the c-axis, Ms being the metallic element of not larger of R(M1) and R(M3), SD(Ms) being a standard deviation/average value of a concentration of Ms.

The present invention addresses the problem of providing: a porous carbon structure that has a high micropore volume and can be self-contained; a manufacturing method therefor; a positive electrode material using the same; and a battery (particularly an air battery) using the same. The present invention is a porous carbon structure that is for a positive electrode for an air battery and has voids and a skeleton formed by incorporating carbon, the porous carbon structure satisfying all of the following conditions (a) to (d). (a) The t-plot external specific surface area is within the range of 300m.sup.2/g to 1600m.sup.2/g; (b) the total volume of micropores having a diameter of lnm to 200 nm is within the range of 1.2 cm.sup.3/g to 7.0cm.sup.3/g; (c) the total volume of micropores having a diameter of lnm to 1000 nm is within the range of 2.3cm3/g to 10.0 cm.sup.3/g; and (d) the overall porosity is within the range of 80% to 99%.

The present invention relates to a light-transmitting ceramic sintered body which contains air voids having pore diameters of 1 μm or more but less than 5 μm at a density within the range of from 10 voids/mm.sup.3 to 4,000 voids/mm.sup.3 (inclusive), while having a closed porosity of from 0.01% by volume to 1.05% by volume (inclusive). With respect to this light-transmitting ceramic sintered body, a test piece having a thickness of 1.90 mm has an average transmittance of 70% or more in the visible spectrum wavelength range of 500-900 nm, and the test piece having a thickness of 1.90 mm has a sharpness of 60% or more at a comb width of 0.5 mm.

A ceramic raw material powder includes: ceramic particles having a perovskite structure containing barium, a mean particle diameter of the ceramic particles being 80 nm or greater and 150 nm or less; and chlorine, wherein a concentration of the chlorine to a B site element of the ceramic particles is 0.2 atm % or greater and 1.1 atm % or less.

The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

A multilayer electronic component includes a multilayer body including dielectric layers and inner electrode layers, the multilayer body including an electrode facing portion in which the inner electrode layers are laminated to face each other with the dielectric layers interposed therebetween. The multilayer body has a thickness of at least about 1.5 mm in a lamination direction, a length of at least about 3.0 mm, and a width of at least about 1.5 mm. Each of the dielectric layers includes Ba, Ti, and Cl. A Cl concentration C.sub.1 in the entire electrode facing portion satisfies about 10 wtppmC.sub.1about 50 wtppm. On an imaginary central axis line, a Cl concentration C.sub.2 in a central portion of the electrode facing portion and a Cl concentration C.sub.3 in both end portions of the electrode facing portion satisfy about 0.5C.sub.2C.sub.3<C.sub.2.

A sintered MnZn ferrite body containing main components comprising 53.30-53.80% by mol of Fe calculated as Fe.sub.2O.sub.3, 6.90-9.50% by mol Zn calculated as ZnO, and the balance of Mn calculated as MnO, and sub-components comprising 0.003-0.020 parts by mass of Si calculated as SiO.sub.2, more than 0 parts and 0.35 parts or less by mass of Ca calculated as CaCO.sub.3, 0.30-0.50 parts by mass of Co calculated as Co.sub.3O.sub.4, 0.03-0.10 parts by mass of Zr calculated as ZrO.sub.2, and 0-0.05 parts by mass of Ta calculated as Ta.sub.2O.sub.5, pre 100 parts by mass in total of the main components (calculated as the oxides), and having an average crystal grain size of 3 m or more and less than 8 m and a density of 4.65 g/cm.sup.3 or more.

An oxide superconductor includes: REBa.sub.2Cu.sub.3O.sub.7-x (RE being one element selected from a RE element group of Pr, Nd, Sm, Eu, Gd, Y, Tb, Dy, Ho, Er, Tm, Yb, and Lu). The RE includes at least three types of metallic elements (M1, M2, and M3), and the three types of metallic elements are any element of the RE element group selected in order. In an oxide system satisfying R(M1)20 mol % and R(M2)60 mol % and R(M3)20 mol %, R(M1) being an average metallic element ratio of M1 in M1+M2+M3, SD(Ms)>0.15 is satisfied at a position at 50% of an average film thickness of a cross section including the c-axis, Ms being the metallic element of not larger of R(M1) and R(M3), SD(Ms) being a standard deviation/average value of a concentration of Ms.

The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.