A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below,

0.80≤In/(In+Y+Ga)≤0.96  (1),

0.02≤Y/(In+Y+Ga)≤0.10  (2), and

0.02≤Ga/(In+Y+Ga)≤0.10  (3), and

Al element at an atomic ratio as defined in a formula (4) below,

0.005≤Al/(In+Y+Ga+Al)≤0.07  (4),

where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.

A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below,
0.80≤In/(In+Y+Ga)≤0.96  (1),
0.02≤Y/(In+Y+Ga)≤0.10  (2), and
0.02≤Ga/(In+Y+Ga)≤0.10  (3), and Al element at an atomic ratio as defined in a formula (4) below,
0.005≤Al/(In+Y+Ga+Al)≤0.07  (4),
where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.

A base plate containing a having a top and a bottom and comprising a beryllium oxide composition containing at least 95 wt % beryllium oxide and optionally fluorine/fluoride ion. The base plate demonstrates a clamping pressure of at least 133 kPa at a temperature of at least 600° C. and a bulk resistivity greater than 1×10.sup.5 ohm-m at 800° C.

A member for a plasma processing apparatus has a tungsten carbide phase, and a sub-phase including at least one selected from the group consisting of phase I to IV, and phase V, in which the phase I is a carbide phase containing, as a constituent element, at least one of the elements of Group IV, V, and VI of the periodic table excluding W, the phase II is a nitride phase containing, as a constituent element, at least one of the elements of Group IV, V, and VI of the periodic table excluding W, the phase III is a carbonitride phase containing, as a constituent element, at least one of the elements of Group IV, Group V, and Group VI of the periodic table excluding W, the phase IV is a carbon phase, the phase V is a composite carbide phase which is represented by a formula W.sub.xM.sub.yC.sub.z.

A method and a fugitive mold for producing a cast-metal part are provided. In some embodiments, the fugitive mold may be formed by three-dimensionally (3D) printing a preceramic resin in the shape of a fugitive mold; curing the preceramic resin to form a preceramic polymer, and pyrolyzing the fugitive mold to convert the preceramic polymer to a metastable ceramic material. The metastable ceramic material may include an amorphous silicon oxycarbide ceramic. A cast-metal part may be formed by filling the fugitive mold with a liquid metal or alloy, and allowing the liquid metal or alloy to solidify over a first length of time. The cast-metal part may then be retrieved by heating the fugitive mold at a temperature lower than the melting point of the cast-metal part for a second length of time longer than the first length of time to disintegrate the metastable ceramic material.

A cubic boron nitride sintered material comprises 30% by volume or more and 99.9% by volume or less of cubic boron nitride grains and 0.1% by volume or more and 70% by volume or less of a binder phase, the cubic boron nitride grain having a carbon content of 0.08% by mass or less, the cubic boron nitride sintered material being free of free carbon.

An electrostatic chuck device includes: a base having one principal surface which is a placing surface on which a plate-shaped sample is placed, wherein the base is made from a sintered compact of ceramic particles, which include silicon carbide particles and aluminum oxide particles, as a forming material; and an electrostatic attraction electrode which is provided on a surface of the base on the side opposite to the placing surface of the base, or in the interior of the base, in which the volume resistivity value of the sintered compact is 0.5×10.sup.15 Ωcm or more in the entire range from 24° C. to 300° C., a graph which shows the relationship of the volume resistivity value of the sintered compact to a temperature at which the volume resistivity value of the sintered compact is measured has a maximum value in the range from 24° C. to 300° C., and the amount of metal impurities in the sintered compact other than aluminum and silicon in the sintered compact is 100 ppm or less.

A method of manufacture for a carbon/carbon part including a method to remove contamination from an intermediate product of the carbon/carbon part and furnace utilizing a gaseous reducing agent hydrogen gas to reduce the contaminates, thereby causing the contaminates to transition to a gaseous state at relatively lower temperatures. A method to remove contamination from an intermediate product of the carbon/carbon part and furnace utilizing hydrogen gas to reduce the contaminates, thereby causing the contaminates to transition to a gaseous state at relatively lower temperatures.

The present invention aims to provide a method for producing granules for ceramic production, the method having high productivity and making it possible to obtain a ceramic which, when produced by press molding the granules and firing the resulting press molded product, has physical properties kept from lowering. The present invention is characterized by including: a slurry preparation step of preparing a slurry including a mixture containing a powder of an inorganic compound, a binder, and a solvent; a granulation step of introducing the slurry into a spray drying device to form a granulated substance containing the inorganic compound; an exhaust step of exhausting an atmospheric gas within the spray drying device via a cyclone having a surface made of ceramic; and a step of mixing a fine powder, which has been recovered by the cyclone during the exhaust step, with the granulated substance obtained in the granulation step.

Provided are a ceramic complex having high light emission intensity and a method for producing the same. Proposed is a ceramic complex, including a rare earth aluminate fluorescent material having a composition represented by the following formula (I) and an aluminum oxide, wherein the content of the aluminum oxide is 70% by mass or more, the content of Na is 7 ppm by mass or less, the content of Si is 5 ppm by mass or less, the content of Fe is 3 ppm by mass or less, and the content of Ga is 5 pm by mass or less, relative to the total amount of the rare earth aluminate fluorescent material having a composition represented by the following formula (I) and the aluminum oxide.
(Ln.sub.1-aCe.sub.a).sub.3Al.sub.5O.sub.12   (I) wherein Ln represents at least one element selected from the group consisting of Y, Gd, Lu, and Tb; and a satisfies 0<a≤0.022.