An yttrium oxide-based sintered body includes yttrium oxide as a predominant component. The sintered body includes aluminum in an amount of 0.1 mass % to 0.5 mass % inclusive as reduced to aluminum oxide, has a metal content of 1,000 ppm or less, the metal excluding yttrium and aluminum, and has a relative density of 98% or higher. By virtue of the yttrium oxide-based sintered body, a plasma resistance comparable to that of a high-purity (99.9%) yttrium oxide sintered body can be achieved. Also, since the relative density is sufficiently high, plasma resistance can be enhanced. As a result, the yttrium oxide-based sintered body can be suitably used as a large-scale member by virtue of excellent mechanical strength.

The object of the present invention is to provide a large-sized gallium nitride-based sintered body having a small oxygen amount and high strength, a large-sized gallium nitride-based sintered body having a small oxygen amount and containing a dopant, to obtain a highly crystalline gallium nitride thin film which has become a n-type or p-type semiconductor by a dopant, and methods for producing them.

A gallium nitride-based sintered body, which has an oxygen content of at most 1 atm % and an average particle size (D50) of at least 1 μm and at most 150 μm.

A porous ceramic of the present disclosure contains yttrium zirconate and yttrium oxide, and at least one of them is a main component. A member for a semiconductor manufacturing apparatus such as a shower plate, a plug or the like in a semiconductor manufacturing apparatus is made of the above porous ceramic.

A method of manufacture for a carbon/carbon part including a method to remove contamination from an intermediate product of the carbon/carbon part and furnace utilizing a gaseous reducing agent hydrogen gas to reduce the contaminates, thereby causing the contaminates to transition to a gaseous state at relatively lower temperatures. A method to remove contamination from an intermediate product of the carbon/carbon part and furnace utilizing hydrogen gas to reduce the contaminates, thereby causing the contaminates to transition to a gaseous state at relatively lower temperatures.

A method of fabricating a CMC part, includes coating a plurality of tows with an interphase by transporting the tows through a treatment chamber in which a gas phase is injected, the tows being tensioned during their transport and the interphase being formed by vapor deposition from the injected gas phase; forming a fiber preform by performing three-dimensional weaving using the tows coated with the interphase; and forming a consolidated fiber preform by treating the fiber preform by chemical vapor infiltration to form a consolidation phase on the interphase, the consolidation phase comprising silicon carbide and having a Young's modulus greater than or equal to 350 GPa.

A process for producing a porous alpha-alumina catalyst support, comprising i) preparing a precursor material comprising, based on inorganic solids content, at least 50 wt.-% of a transition alumina having a loose bulk density of at most 600 g/L, a pore volume of at least 0.6 mL/g and a median pore diameter of at least 15 nm; and at most 30 wt.-% of an alumina hydrate; ii) forming the precursor material into shaped bodies; and iii) calcining the shaped bodies to obtain the porous alpha-alumina catalyst support. The catalyst support has a high overall pore volume, thus allowing for impregnation with a high amount of silver, while keeping its surface area sufficiently large so as to provide optimal dispersion of catalytically active species, in particular metal species. The invention further relates to a shaped catalyst body for producing ethylene oxide by gas-phase oxidation of ethylene, comprising at least 15 wt.-% of silver, relative to the total weight of the catalyst, deposited on a porous alpha-alumina catalyst support obtained in the process described above. The invention also relates to a process for preparing a shaped catalyst body as described above comprising impregnating a porous alpha-alumina catalyst support obtained in the process described above with a silver impregnation solution, preferably under reduced pressure; and optionally subjecting the impregnated porous alumina support to drying; and b) subjecting the impregnated porous alpha-alumina support to a heat treatment; wherein steps a) and b) are optionally repeated. The invention further relates to a process for producing ethylene oxide by gas-phase oxidation of ethylene, comprising reacting ethylene and oxygen in the presence of a shaped catalyst body as described above.

An object of the present invention is to provide a high-density Cr—Si—C-based sintered body including chromium (Cr), silicon (Si) and carbon (C) and is furthermore to provide at least one of the high-density Cr—Si—C-based sintered body, a sputtering target including the sintered body or a method for producing a film using the sputtering target. The present invention can provide a Cr—Si—C-based sintered body including chromium (Cr), silicon (Si) and carbon (C), wherein the sintered body has a relative density of 90% or more and a porosity of 13% or less.

A silicon carbide-graphite composite is described, including (i) interior bulk graphite material and (ii) exterior silicon carbide matrix material, wherein the interior bulk graphite material and exterior silicon carbide matrix material inter-penetrate one another at an interfacial region therebetween, and wherein graphite is present in inclusions in the exterior silicon carbide matrix material. Such material may be formed by contacting a precursor graphite article with silicon monoxide (SiO) gas under chemical reaction conditions that are effective to convert an exterior portion of the precursor graphite article to a silicon carbide matrix material in which graphite is present in inclusions therein, and wherein the silicon carbide matrix material and interior bulk graphite material interpenetrate one another at an interfacial region therebetween. Such silicon carbide-graphite composite is usefully employed in applications such as implant hard masks in manufacturing solar cells or other optical, optoelectronic, photonic, semiconductor and microelectronic products, as well as in ion implantation system materials, components, and assemblies, such as beam line assemblies, beam steering lenses, ionization chamber liners, beam stops, and ion source chambers.

A method of altering a surface of a ceramic matrix composite to aid in nodule removal is described. A fiber preform comprising a framework of ceramic fibers is heated to a temperature at or above a melting temperature of silicon. During the heating, the fiber preform is infiltrated with a molten material comprising silicon. After the infiltration, the fiber preform is cooled, and the infiltrated fiber preform is exposed to a gas comprising nitrogen during cooling. Silicon nitride may be formed by a reaction of free (unreacted) silicon at or near the surface of the infiltrated fiber preform with the nitrogen. Thus, a ceramic matrix composite having a surface configured for easy nodule removal is formed. Any silicon nodules formed on the surface during cooling may be removed without machining or heat treatment.

A silicon carbide-graphite composite is described, including (i) interior bulk graphite material and (ii) exterior silicon carbide matrix material, wherein the interior bulk graphite material and exterior silicon carbide matrix material inter-penetrate one another at an interfacial region therebetween, and wherein graphite is present in inclusions in the exterior silicon carbide matrix material. Such material may be formed by contacting a precursor graphite article with silicon monoxide (SiO) gas under chemical reaction conditions that are effective to convert an exterior portion of the precursor graphite article to a silicon carbide matrix material in which graphite is present in inclusions therein, and wherein the silicon carbide matrix material and interior bulk graphite material interpenetrate one another at an interfacial region therebetween. Such silicon carbide-graphite composite is usefully employed in applications such as implant hard masks in manufacturing solar cells or other optical, optoelectronic, photonic, semiconductor and microelectronic products, as well as in ion implantation system materials, components, and assemblies, such as beam line assemblies, beam steering lenses, ionization chamber liners, beam stops, and ion source chambers.