Embodiments are directed to the field of ceramics and relate to electron-emitting ceramics such as those which can be used as cathode material for electron emissions in space flight systems, for example. Embodiments specify an electron-emitting ceramic which has an improved temperature conductivity with a simultaneously continuous electron emission. The electron-emitting ceramic contains at least>70 vol. % C12A7 electride and a proportion of Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, In, Sn, Sb, Te, Tl, Pb, or Bi as metal and/or with Ti, wherein the proportion of the metals lies between>0 and<30 vol. %, and the ceramic has a density of at least 85% of the theoretical density of the ceramic and the ceramic contains 0 to maximally 10 vol. % production-specific impurities.

A particulate filter and method of manufacture. The particulate filter includes intersecting walls that define longitudinally extending channels The intersecting walls comprise a porous ceramic material having a bare microstructure that comprises an interconnected network of porous spheroidal ceramic beads that has an open intrabead porosity within the beads and an interbead porosity defined by interstices between the beads. Catalyst particles are deposited at least partially within the intrabead porosity within the interbead porosity. The bare microstructure has a bimodal pore size distribution in which an intrabead median pore size of the intrabead porosity is less than an interbead median pore size of the interbead porosity. The filter has a trimodal pore size distribution comprising a first peak corresponding to the interbead porosity, a second peak corresponding to the intrabead porosity, and a third peak corresponding to the intrabead porosity as blocked by the catalyst particles.

Disclosed herein are compounds, methods, and tools which comprise composite matrices of tungsten tetraborides and ceramics.

Provided is a thermoelectric material satisfying (MX).sub.1+a(TX.sub.2).sub.n and having a superlattice structure, wherein M is at least one element selected from the group consisting of Group 13, Group 14, and Group 15, T is at least one element selected from Group 5, X is a chalcogenide element, a is a real number satisfying 0<a<1, and n is a natural number of 1 to 3.

A purification method that uses ion-selective ceramics to electrochemically filter waste products from a molten salt. The electrochemical method uses ion-conducting ceramics that are selective for the molten salt cations desired in the final purified melt, and selective against any contaminant ions. The method can be integrated into a slightly modified version of the electrochemical framework currently used in pyroprocessing of nuclear wastes.

A particle mixture having: ZrO.sub.2+HfO.sub.2+Y.sub.2O.sub.3+CeO.sub.2; 0%≤Al.sub.2O.sub.3≤1.5%; other oxides than ZrO.sub.2, HfO.sub.2, Y.sub.2O.sub.3, CeO.sub.2 and Al.sub.2O.sub.3: between 0.5% and 12%. The contents of Y.sub.2O.sub.3 and CeO.sub.2, on the basis of the sum of ZrO.sub.2, HfO.sub.2, Y.sub.2O.sub.3 and CeO.sub.2, being such that 1.8%≤Y.sub.2O.sub.3≤3% and 0.1%≤CeO.sub.2≤0.9%. The mixture includes between 0.5% and 10% of particles of an oxide pigment. The content of other oxides and which are not included in the oxide pigment being less than 2%. The particles of the oxide pigment including, for more than 95%, of a material chosen from: oxide(s) of perovskite structure or equivalent of precursor(s) of these oxides, oxides of spinal structure or an equivalent amount of precursor(s) of these oxides, and oxides of hematite structure E.sub.2O.sub.3, oxides of rutile structure FO.sub.2, with “E” and “F” being chosen.

Provided are an oxide sintered compact whereby low carrier density and high carrier mobility are obtained when the oxide sintered compact is used to obtain an oxide semiconductor thin film by a sputtering method, and a sputtering target which uses the oxide sintered compact. This oxide sintered compact contains oxides of indium, gallium, and aluminum. The gallium content is from 0.15 to 0.49 by Ga/(In+Ga) atomic ratio, and the aluminum content is from 0.0001 to less than 0.25 by Al/(In+Ga+Al) atomic ratio. A crystalline oxide semiconductor thin film formed using this oxide sintered compact as a sputtering target is obtained at a carrier density of 4.0×10.sup.18 cm.sup.−3 or less and a carrier mobility of 10 cm.sup.−2V.sup.−1sec.sup.−1 or greater.

A cBN sinter comprising cubic boron nitride grains and a binder phase, the binder phase comprising Ti.sub.2CN and TiAl.sub.3, wherein the ratio I.sub.Ti2CN/I.sub.TiAl3 of the peak intensity I.sub.Ti2CN of Ti.sub.2CN appearing at 2θ=41.9° to 42.2° to the peak intensity I.sub.TiAl3 of TiAl.sub.3 appearing at 2θ=39.0° to 39.3° is in a range of 2.0 to 30.0 in an XRD measurement.

There is disclosed a plugged honeycomb structure. A plugged honeycomb structure includes a tubular honeycomb structure body having partition walls including a porous partition wall base material defining a plurality of cells which become through channels for a fluid and extend from a first end face to a second end face, and a porous trapping layer disposed on the surface of the partition wall base material; and plugging portions disposed in open ends of predetermined cells in the first end face and open ends of residual cells in the second end face, and the partition wall base material is constituted of a porous body including α-Al.sub.2O.sub.3 as a main phase and further including aluminum titanate and glass.

Disclosed is a coated ceramic fiber including a silicon carbide coating layer adjacent to the ceramic fiber and a silicon dioxide coating layer adjacent to the silicon carbide coating layer, wherein the silicon dioxide coating layer forms micro cracks after a crystal structure transformation. The coated ceramic fiber may be included in a composite material having a ceramic matrix.