The present invention aims to provide a lithium-ion-conducting oxide sintered body capable of providing a solid electrolyte with an excellent ion conductivity, and a solid electrolyte, an electrode and an all-solid-state battery using the same. The lithium-ion-conducting oxide sintered body including at least lithium, tantalum, phosphorus, silicon, and oxygen as constituent elements, and having a polycrystalline structure consisting of crystal grains and grain interfaces formed between the crystal grains.

A silicon carbide flow reactor fluidic module comprises a monolithic closed-porosity silicon carbide body, a tortuous fluid passage extending through the silicon carbide body, the tortuous fluid passage having an interior surface, and one or more thermal control fluid passages also extending through the silicon carbide body, the interior surface having a surface roughness of less than 10 μm Ra. A process for forming such modules is also disclosed.

A process for the manufacture of inorganic fibres comprises: (a) selecting a composition and proportion of: (i) silica sand; (ii) lime comprising at least 0.10 wt % magnesia; and (iii) optional additives comprising a source of oxides or non-oxides of one or more of the lanthanides series of elements, or combinations thereof; (b) mixing the silica sand; lime; and optional additives to form a mixture; (c) melting the mixture in a furnace; and (d) shaping the molten mixture into inorganic fibres. The raw materials selection comprises composition selection and proportion selection of the raw materials to obtain an inorganic fibre composition comprising a range of from 61.0 wt % and 70.8 wt % silica; less than 2.0 wt % magnesia; less than 2.0% incidental impurities; and no more than 2.0 wt % of metal oxides and/or metal non-oxides derived from said optional additives; with calcia providing the balance up to 100 wt %; and wherein the inorganic fibre composition comprises no more than 0.80 wt % Al.sub.2O.sub.3 derived from the incidental impurities and/or the optional additives.

A metal-Si based powder contains a metal-Si based particle including a plurality of crystal phase grains. The crystal phase grains include a crystal phase containing a compound of a metal and Si. The crystal phase grains have an average grain size of, for example, 20 μm or less. The metal-Si based particle has an average particle size of, for example, 5 to 100 μm.

Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

A pore-free ceramic is provided that has a high modulus of elasticity and a low coefficient of thermal expansion. A process for producing a corresponding ceramic is also provided. The pore free ceramic is a dimensionally stable substrate material in applications subjected to temperature gradients including semiconductor manufacture.

Disclosed are embodiments of high Q modified materials. In some embodiments, complex tungsten oxides and/or hexagonal perovskite crystal structures can be added to provide for advantageous properties. In some embodiments, no tin is used in the formation of the material.

The present disclosure relates to a mold for glass forming, wherein the mold comprises a ceramic material, and wherein the ceramic material comprises aluminum nitride and hexagonal boron nitride, and wherein the ceramic material comprises from 50 to 80% by weight of aluminum nitride and from 20 to 50% by weight of hexagonal boron nitride, based on the total weight of the ceramic material. The present disclosure further relates to a process for using such molds to form curved glass plates.

A sputtering target comprising a top coat including a composition of lithium cobalt oxide LiyCozOx. x is smaller than or equal to y+z, and the lithium cobalt oxide has an X-Ray diffraction pattern with a peak P2 at 44°±0.2° 2-theta. The X-Ray diffraction pattern is measured with an X-Ray diffractometer with CuKα1 radiation.

A ceramic substrate made of a dielectric material including silicon carbide particles, which is used as a forming material, in which the number of the silicon carbide particles per unit area on the surface of the substrate is smaller than the number of the silicon carbide particles per unit area in a cross section of the substrate.