A glassy carbon compact according to the present invention has a maximum inscribed sphere diameter of 5 mm or greater, comprises pores having diameters of 500 nm or less dispersed throughout the glassy carbon compact, and has a density of 1.1 g/cm.sup.3 or greater.

The method includes forming an inner monolithic layer from crystals of beta phase stoichiometric silicon carbide on a carbon substrate in the form of a rod by chemical methylsilane vapor deposition in a sealed tubular hot-wall CVD reactor. The method further includes forming a central composite layer over the inner monolithic layer by twisting continuous beta phase stoichiometric silicon carbide fibers into tows, transporting the tows to a braiding machine, and forming a reinforcing thread framework. A pyrocarbon interface coating is built up by chemical methane vapor deposition in a sealed tubular hot-wall CVD reactor. Then, a matrix is formed by chemical methylsilane vapor deposition in the reactor. A protective outer monolithic layer is formed from crystals of beta phase stoichiometric silicon carbide over the central composite layer by chemical methylsilane vapor deposition in a CVD reactor. And then the carbon substrate is removed from the fabricated semi-finished product.

A method for forming a hole in a ceramic matrix composite component includes providing a first tool component with a first hole, providing a fiber preform of the ceramic matrix composite component on the first tool component, positioning a second tool component on the fiber preform, such that the fiber preform is disposed between the first and second tool components, inserting a rod into the first and second holes and through the fiber preform, and performing a densification step of the fiber preform in the first and second tool components. The second tool component has a second hole coaxial with the first hole. The fiber preform is densified with a ceramic matrix.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

A material for 3D printing is described. The material comprises a polymeric composition comprising a thermoplastic polymer; and from 50 to 99 wt. % ceramic particles comprising a metal, wherein at least 50% by weight of the particles have a diameter in a range from 10 to 100 μm; wherein the material has a dielectric strength of at least 5 kV/mm and/or a dielectric constant of at least 5.

A method for molding a ceramic material includes: mixing a ceramic powder, a resin, a curing agent and a solvent to obtain a raw material slurry for a ceramic material; injecting the raw material slurry into an elastic container; curing the resin in the raw material slurry injected into the elastic container to form a molded body having a desired shape; and demolding the molded body from the elastic container.

The present application discloses a dense lead metaniobate piezoelectric ceramic and a preparation method therefor. The chemical composition of the lead metaniobate piezoelectric ceramic is Pb.sub.1-xNb.sub.2O.sub.6, wherein x represents the Pb vacancy concentration of A sites in a tungsten bronze crystal structure, and x is greater than 0.00 and smaller than or equal to 0.20.

The disclosed technology relates to a ceramic composition and an article formed therefrom. A ceramic article for radio frequency applications is formed of a ceramic material having a chemical formula represented by: Bi.sub.1.0+aY.sub.2.0-a-x-2yCa.sub.x+2yFe.sub.5-x-yM.sup.IV.sub.xV.sub.yO.sub.12 or Bi.sub.1.0+aY.sub.2.0-a-2yCa.sub.2yFe.sub.5-y-zV.sub.yIn.sub.zO.sub.12. The ceramic material has a composition such that a normalized change in saturation magnetization (Δ4πMs), defined as Δ4πMs=[(4πMs at 20° C.)-(4πMs at 120° C.)]/(4πMs at 20° C.), is less than about 0.35.

An antiballistic armor-plating component, includes a ceramic body made of a material comprising, as percentages by volume, between 35% and 55% of silicon carbide, between 20% and 50% of boron carbide, between 15% and 35% of a metallic silicon phase or of a metallic phase including silicon.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.