A method for producing a ceramic complex includes: preparing a raw material mixture that contains 5% by mass or more and 40% by mass or less of first rare earth aluminate fluorescent material particles containing an activating element and a first rare earth element different from the activating element, 0.1% by mass or more and 32% by mass or less of oxide particles containing a second rare earth element, and the balance of aluminum oxide particles, relative to 100% by mass of the total amount of the first rare earth aluminate fluorescent material particles, the oxide particles, and the aluminum oxide particles; preparing a molded body of the raw material mixture; and obtaining a sintered body by calcining the molded body in a temperature range of 1,550° C. or higher and 1,800° C. or lower.

A target for sputtering comprises SiZrxOy wherein x is higher than 0.02 but not higher than 5, and y is higher than 0.03 but not higher than 2*(1+x), wherein the target has an XRD pattern with silicon 2-theta peak at 28.29°+/−0.3°, or a tetragonal phase ZrO2 2-theta peak at 30.05°+/−0.3°. The target has a low resistivity, below 1000 ohm.Math.cm, preferably below 100 ohm.Math.cm, more preferably below 10 ohm.Math.cm, even lower than 1 ohm.Math.cm.

A ceramic electronic component includes: a body including dielectric layers and internal electrodes; and external electrodes disposed on the body and connected to the internal electrodes, wherein the dielectric layer includes a plurality of dielectric crystal grains, and at least one of the plurality of dielectric crystal grains has a core-double shell structure, the double shell includes a first shell surrounding at least a portion of the core and a second shell surrounding at least a portion of the first shell, the first shell includes a first element, one or more of Sn, Sb, Ge, Si, Ga, In, or Zr, and the second shell includes a second element, one or more of Ca or Sr.

A target for sputtering comprises SiZrxOy wherein x is higher than 0.02 but not higher than 5, and y is higher than 0.03 but not higher than 2*(1+x), wherein the target has an XRD pattern with silicon 2-theta peak at 28.29°+/−0.3°, or a tetragonal phase ZrO2 2-theta peak at 30.05°+/−0.3°. The target has a low resistivity, below 1000 ohm.Math.cm, preferably below 100 ohm.Math.cm, more preferably below 10 ohm.Math.cm, even lower than 1 ohm.Math.cm.

The present invention relates to a method for preparing a SiC—Si.sub.3N.sub.4 composite material and a SiC—Si.sub.3N.sub.4 composite material prepared according to same and comprises the steps of: preparing a mold; and forming a SiC—Si.sub.3N.sub.4 composite material by introducing, to the mold, a source gas comprising Si, N and C, at 1100 to 1600° C. More particularly, the present invention provides the SiC—Si.sub.3N.sub.4 composite material of high purity that is applicable to a semiconductor process, and increases the thermal shock strength of a SiC material by causing Si.sub.3N.sub.4, which is a material with a high thermal shock strength, to grow together via a CVD method.

A composition which can be photopolymerized to make a part consisting of an oxide ceramic, or a hybrid part comprising at least one oxide ceramic and organic constituents, by a stereolithographic technique, the composition comprising: at least one photopolymerizable organic compound; at least one photo-initiator; at least one precursor of the oxide ceramic wherein the composition comprises from 25% to 70% by mass, relative to the total mass of the composition, of the at least one precursor of the oxide ceramic; and wherein the at least one precursor of the oxide ceramic comprises a mixture comprising a nanometric powder of the oxide ceramic, and at least one other element selected from a micrometric powder of the oxide ceramic and a pre-ceramic compound of the oxide ceramic.

It is difficult for a Cr—Si-based sintered body composed of chromium silicide (CrSi.sub.2) and silicon (Si) to have high strength.

Provided is a Cr—Si-based sintered body including Cr (chromium) and silicon (Si), in which the crystal structure attributed by X-ray diffraction is composed of chromium silicide (CrSi.sub.2) and silicon (Si), a CrSi.sub.2 phase is present at 60 wt % or more in a bulk, a density of the sintered body is 95% or more, and an average grain size of the CrSi.sub.2 phase is 60 μm or less.

Methods and apparatus for plasma chamber target for reducing defects in workpiece during dielectric sputtering are provided. For example, a dielectric sputter deposition target can comprise a dielectric compound having a predefined average grain size ranging from approximately 65 μm to 500 μm, wherein the dielectric compound is at least one of magnesium oxide or aluminum oxide.

A ceramic electronic component includes: a body including dielectric layers and internal electrodes; and external electrodes disposed on the body and connected to the internal electrodes, wherein the dielectric layer includes a plurality of dielectric crystal grains, and at least one of the plurality of dielectric crystal grains has a core-double shell structure, the double shell includes a first shell surrounding at least a portion of the core and a second shell surrounding at least a portion of the first shell, the first shell includes a first element, one or more of Sn, Sb, Ge, Si, Ga, In, or Zr, and the second shell includes a second element, one or more of Ca or Sr.

A paramagnetic garnet-type transparent ceramic that exhibits a high laser damage threshold, said ceramic being a sintered body of a Tb-containing rare earth-aluminum garnet represented by formula (1), and being characterized in that the average sintered grain size is 10-40 μm, and the insertion loss at a wavelength of 1,064 nm in the optically effective region along the length direction of a 20 mm-long sample is 0.05 dB or less.

(Tb.sub.1-x-yY.sub.xSc.sub.y).sub.3(Al.sub.1-zSc.sub.z).sub.5O.sub.12  Formula (1)

(In the formula, 0≤x<0.45, 0≤y<0.08, 0≤z<0.2, and 0.001<y+z<0.20.)