A dielectric composition includes a main phase, first segregation phases, and second segregation phases. The main phase includes a main component having a perovskite crystal structure of ABO.sub.3 (A is one or more selected from Ba, Sr, and Ca, and B is one or more selected from Ti, Zr, and Hf). The first segregation phases include RE (one or more selected from rare earth elements), A, Si, Ti, and O. The second segregation phases include RE, A, Ti, and O and do not substantially include Si. 0.10<S2/S1≤1.50 is satisfied on a cross section of the dielectric composition, where S1 is an area ratio of the first segregation phases, and S2 is an area ratio of the second segregation phases.

A composite ceramic including: a lithium garnet major phase; and a grain growth inhibitor minor phase, as defined herein. Also disclosed is a method of making composite ceramic, pellets and tapes thereof, a solid electrolyte, and an electrochemical device including the solid electrolyte, as defined herein.

A composite structure including a conductor region that is configured from a first oxide, and an insulator region that is configured from a second oxide and that surrounds the conductor region, wherein the first oxide and the second oxide are in hetero structure with each other. A powder and a fired body each having such a composite structure are also preferable.

An oxide superconducting wire includes a superconducting layer deposited on a substrate. The superconducting layer includes an oxide superconductor RE-Ba—Cu—O and artificial pinning centers ABO.sub.3, where RE is a rare earth element, A is Ba, Sr or Ca, and B is Hf, Zr, or Sn. In a TEM image of a cross-section of the superconducting layer, a standard deviation σ of an inclination angle of the artificial pinning center rods with respect to a cross-sectional direction of the superconducting layer is 6.13° to 11.73° and an average length of the artificial pinning center rods is 19.84 to 25.44 nm.

A refractory article includes a body having a first portion defining at least a portion of a first exterior surface of the body, the first portion including a carbide, and further including a second portion defining at least a portion of a second exterior surface of the body opposite the first exterior surface, the second portion including an oxide, and a thermal conductivity difference (ΔTC) of at least 10 W/mK between the first exterior surface and the second exterior surface, and an average Shell Temperature of not greater than 400° C.

An oxide superconducting wire includes a superconducting layer deposited on a substrate. The superconducting layer includes an oxide superconductor RE-Ba—Cu—O and artificial pinning centers ABO.sub.3, where RE is a rare earth element, A is Ba, Sr or Ca, and B is Hf, Zr, or Sn. In a TEM image of a cross-section of the superconducting layer, a standard deviation σ of an inclination angle of the artificial pinning center rods with respect to a cross-sectional direction of the superconducting layer is 6.13° to 11.73° and an average length of the artificial pinning center rods is 19.84 to 25.44 nm.

A thermoelectric conversion element includes an element body formed of a thermoelectric conversion material of a silicide-based compound, and electrodes each formed on one surface of the element body and the other surface opposite the one surface. The electrodes are formed of a sintered body of a copper silicide, and the electrodes and the element body are directly joined.

Disclosed are embodiments of synthetic garnet materials for use in radiofrequency applications. In some embodiments, increased amounts of bismuth can be added into specific sites in the crystal structure of the synthetic garnet in order to boost certain properties, such as the dielectric constant and magnetization. Accordingly, embodiments of the disclosed materials can be used in high frequency applications, such as in base station antennas.

A method of producing polycrystalline Y.sub.3Ba.sub.5Cu.sub.8O.sub.y (Y-358) whereby powders of yttrium (III) oxide, a barium (II) salt, and copper (II) oxide are pelletized, calcined at 850 to 950° C. for 8 to 16 hours, ball milled under controlled conditions, pelletized again and sintered in an oxygen atmosphere at 900 to 1000° C. for up to 72 hours. The polycrystalline Y.sub.3Ba.sub.5Cu.sub.8O.sub.y thus produced is in the form of elongated crystals having an average length of 2 to 10 μm and an average width of 1 to 2 μm, and embedded with spherical nanoparticles of yttrium deficient Y.sub.3Ba.sub.5Cu.sub.8O.sub.y having an average diameter of 5 to 20 nm. The spherical nanoparticles are present as agglomerates having flower-like morphology with an average particles size of 30 to 60 nm. The ball milled polycrystalline Y.sub.3Ba.sub.5Cu.sub.8O.sub.y prepared under controlled conditions shows significant enhancement of superconducting and flux pinning properties.

Disclosed is a plastic semiconductor material and a preparation method thereof. The semiconductor material comprises an argentite-based compound represented by the following formula (I): Ag.sub.2-δX.sub.δS.sub.1-ηY.sub.η(I), in which 0≤δ<0.5, 0≤η<0.5, X is at least one of Cu, Au, Fe, Co, Ni, Zn, Ti, or V, and Y is at least one of N, P, As, Sb, Se, Te, O, Br, Cl, I, or F. The material can withstand certain deformations, similar to organic materials, and has excellent semiconductor properties with adjustable electrical properties, thereby enabling the preparation of high-performance flexible semiconductor devices.