C04B2235/81

MATERIAL INCLUDING BORON SUBOXIDE AND METHOD OF FORMING SAME
20190330114 · 2019-10-31 ·

A material including a body including B.sub.6O.sub.X can include lattice constant c of at most 12.318. X can be at least 0.85 and at most 1. In a particular embodiment, 0.90X1. In another particular embodiment, lattice constant a can be at least 5.383 and lattice constant c can be at most 12.318. In another particular embodiment, the body can consist essentially of B.sub.6O.sub.X.

DIELECTRIC MATERIAL, MULTI-LAYERED CAPACITORS AND ELECTRONIC DEVICES COMPRISING THE SAME

Disclosed are a dielectric material, a multi-layered capacitor, and an electronic device including the same. The dielectric material includes a dielectric material particle represented by ADO.sub.3, wherein A includes Sr, Ba, Ca, Pb, K, Na, or a combination thereof, D includes Ti, Zr, Mg, Nb, Ta, or a combination thereof, the dielectric material particle includes about 2.5 moles to about 4 moles of the donor element, based on 100 moles of D, and a diameter of the dielectric material particle is in a range of from about 100 nanometers to about 300 nanometers.

Alumina isopipes for use with tin-containing glasses

Isopipes (13) for making glass sheets using a fusion process are provided. The isopipes are made from alumina materials which have low levels of the elements of group IVB of the periodic chart, i.e., Ti, Zr, and Hf, as well as low levels of Sn. In this way, the alumina isopipes can be used with glasses that contain tin (e.g., as a fining agent or as the result of the use of tin electrodes for electrical heating of molten glass) without generating unacceptable levels of tin-containing defects in the glass sheets, specifically, at the sheets' fusion lines. The alumina isopipes disclosed herein are especially beneficial when used with tin-containing glasses that exhibit low tin solubility, e.g., glasses that have (RO+R.sub.2O)/Al.sub.2O.sub.3 ratios between 0.9 and 1.1, where, in mole percent on an oxide basis, (RO+R.sub.2O) is the sum of the concentrations of the glass' alkaline earth and alkali metal oxides and Al.sub.2O.sub.3 is the glass' alumina concentration.

Sialon sintered body, method for producing the same, composite substrate, and electronic device

A SiAlON sintered body according to the present invention is represented by Si.sub.6-zAl.sub.zO.sub.zN.sub.8-z (0<z4.2) and has an open porosity of 0.1% or less and a relative density of 99.9% or more. A ratio of a total of intensities of maximum peaks of components other than SiAlON to an intensity of a maximum peak of the SiAlON in an X-ray diffraction diagram is 0.005 or less.

Method for producing ceramic sintered body, ceramic sintered body, and light emitting device
11976228 · 2024-05-07 · ·

Provided are a method for producing a ceramic sintered body having improved light emission intensity, a ceramic sintered body, and a light emitting device. The method for producing a ceramic sintered body comprises preparing a molded body that contains a nitride fluorescent material having a composition containing: at least one alkaline earth metal element M.sup.1 selected from the group consisting of Ba, Sr, Ca, and Mg; at least one metal element M.sup.2 selected from the group consisting of Eu, Ce, Tb, and Mn; Si; and N, wherein a total molar ratio of the alkaline earth metal element M.sup.1 and the metal element M.sup.2 in 1 mol of the composition is 2, a molar ratio of the metal element M.sup.2 is a product of 2 and a parameter y and wherein y is in a range of 0.001 or more and less than 0.5, a molar ratio of Si is 5, and a molar ratio of N is 8, and wherein the nitride fluorescent material has a crystallite size, as calculated by X-ray diffraction measurement using the Halder-Wagner method, of 550 ? or less, and calcining the molded body at a temperature in a range of 1,600? C. or more and 2,200? C. or less to obtain a sintered body.

HEATER FOR SEMICONDUCTOR MANUFACTURING APPARATUS
20190244847 · 2019-08-08 · ·

A heater for a semiconductor manufacturing apparatus, the heater includes an AlN ceramic substrate and a heating element embedded inside the AlN ceramic substrate. The AlN ceramic substrate contains O, C, Ti, Ca, and Y as impurity elements, includes an yttrium aluminate phase as a crystal phase, and has a Ti/Ca mass ratio of 0.13 or more, and a TiN phase is not detected in an XRD profile measured with Cu K- radiation.

Mixed garnet oxide scintillators and corresponding systems and methods

Scintillator materials based on mixed garnet compositions, as well as corresponding methods and systems, are described.

PROTON CONDUCTOR AND MEMBRANE ELECTRODE ASSEMBLY
20190181481 · 2019-06-13 ·

A proton conductor of the present disclosure has a composition formula of Ba.sub.aZr.sub.1-x-yYb.sub.xNi.sub.yO.sub.3- (0.95a1.05, 0.1x0.4, and 0.15y0.30).

DIAMOND POLYCRYSTALLINE BODY, AND TOOL COMPRISING DIAMOND POLYCRYSTALLINE BODY

A polycrystalline diamond comprising diamond particles, wherein: the content of the diamond particles is more than 99% by volume based on the total volume of the polycrystalline diamond; the median diameter d50 of the diamond particles is 10 nm or more and 200 nm or less; and the dislocation density of the diamond particles is 2.0?10.sup.15 m.sup.?2 or more and 4.0?10.sup.16 m.sup.?2 or less.

ZIRCONIA SINTERED BODY, ZIRCONIA COMPOSITION, ZIRCONIA PRE-SINTERED BODY AND PREPARING METHOD THEREOF, AND DENTAL PROSTHESIS

A zirconia sintered body having gradation is provided. A method for preparing a zirconia composition comprises preparing a plurality of powders for lamination; the lamination powders containing zirconia, a stabilizer(s) suppressing phase transition of zirconia and a pigment(s) at respective different pigment content ratios, and laminating the lamination powders in a mold. In the laminating step, the mold is vibrated after at least two lamination powders are charged into the mold.