A sputtering target having a composition of LiCoO.sub.2, wherein a resistivity of the target is 100 cm or less, and a relative density is 80% or higher. The sputtering target of the present invention is effective for use in forming a positive electrode thin film in all-solid-state thin-film lithium ion secondary batteries equipped in vehicles, information and communication electronics, household appliances, and the like.

The present disclosure relates to a gas turbine part, which can be exposed to high temperatures and centrifugal forces within a gas turbine. The gas turbine part can include plural sliced parts, wherein at least one of said sliced parts is made from a ternary ceramic called MAX phase, having the formula M.sub.n+1AX.sub.n, where n=1, 2, or 3, M is an early transition metal such as Ti, V, Cr, Zr, Nb, Mo, Hf, Sc, Ta, and A is an A-group element such as Al, Si, P, S, Ga, Ge, As, Cd, In, Sn, Tl, Pb, and X is C and/or N.

A cBN sintered material cutting tool is provided. The cBN cutting tool includes a cutting tool body, which is a sintered material including cBN grains and a binder phase, wherein the sintered material comprises: the cubic boron nitride grains in a range of 40 volume % or more and less than 60 volume %; and Al in a range from a lower limit of 2 mass % to an upper limit Y, satisfying a relationship, Y=0.1X+10, Y and X being an Al content in mass % and a content of the cubic boron nitride grains in volume %, respectively, the binder phase comprises: at least a Ti compound; Al.sub.2O.sub.3; and inevitable impurities, the Al.sub.2O.sub.3 includes fine Al.sub.2O.sub.3 grains with a diameter of 10 nm to 100 nm dispersedly formed in the binder phase, and there are 30 or more of the fine Al.sub.2O.sub.3 grains generated in an area of 1 m1 m in a cross section of the binder phase.

Embodiments disclosed herein relate to using cobalt (Co) to fine tune the magnetic properties, such as permeability and magnetic loss, of nickel-zinc ferrites to improve the material performance in electronic applications. The method comprises replacing nickel (Ni) with sufficient Co.sup.+2 such that the relaxation peak associated with the Co.sup.+2 substitution and the relaxation peak associated with the nickel to zinc (Ni/Zn) ratio are into near coincidence. When the relaxation peaks overlap, the material permeability can be substantially maximized and magnetic loss substantially minimized. The resulting materials are useful and provide superior performance particularly for devices operating at the 13.56 MHz ISM band.

An oxide sintered body which, when made into an oxide semiconductor thin film by sputtering, can achieve low carrier density and high carrier mobility, and a sputtering target using said oxide sintered body are provided. This oxide sintered body contains indium and gallium as oxides, contains nitrogen, and does not contain zinc. The gallium content in terms of the atomic ratio Ga/(In+Ga) is between 0.20 and 0.60, inclusive, and substantially no GaN phase is included. Furthermore, the sintered oxide preferably has no Ga.sub.2O.sub.3 phase. An amorphous oxide semiconductor thin film formed using this oxide sintered body as a sputtering target yields a carrier density of 3.010.sup.18 cm.sup.3 or less, and a carrier mobility of 10 cm.sup.2 V.sup.1 sec.sup.1 or more.

An oxide sintered body which, when made into an oxide semiconductor thin film by sputtering, can achieve low carrier density and high carrier mobility, and a sputtering target using said oxide sintered body are provided. This oxide sintered body contains indium and gallium as oxides, contains nitrogen, and does not contain zinc. The gallium content in terms of the atomic ratio Ga/(In+Ga) is at least 0.005 but less than 0.20, and substantially no GaN phase is included. Furthermore, the sintered oxide preferably has no Ga.sub.2O.sub.3 phase. A crystalline oxide semiconductor thin film formed using this oxide sintered body as a sputtering target yields a carrier density of 1.010.sup.18 cm.sup.3 or less, and a carrier mobility of 10 cm.sup.2V.sup.1sec.sup.1 or more.

A glass forming apparatus comprises a forming device configured to form a glass ribbon from a quantity of molten glass. The glass forming apparatus includes a refractory material comprising monazite (REPO.sub.4). In another example, a method of forming a glass ribbon with a glass forming apparatus includes the step of supporting a quantity of molten glass with a refractory member comprising a refractory material comprising monazite (REPO.sub.4). The method further includes the step of forming the glass ribbon from the quantity of molten glass.

The present invention provides a piezoelectric material not containing lead and potassium, showing satisfactory insulation and piezoelectricity, and having a high Curie temperature. The invention relates to a piezoelectric material includes a main component containing a perovskite-type metal oxide represented by Formula (1): (Na.sub.xBa.sub.1-y)(Nb.sub.yTi.sub.1-y)O.sub.3 (wherein, 0.80x0.94 and 0.83y0.94), and an additive component containing at least one element selected from Mn and Ni, wherein the content of the Ni is 0 mol or more and 0.05 mol or less based on 1 mol of the perovskite-type metal oxide, and the content of the Mn is 0 mol or more and 0.005 mol or less based on 1 mol of the perovskite-type metal oxide.

A method of forming a ceramic body including forming a mixture made of at least a first powder material (PM1) including carbon having a first average particle size (PS1), a second powder material (PM2) including carbon and different than the first powder material, the second powder material having a second average particle size (PS2) less than the first average particle size (PS1), and an aluminum content (AC2) greater than the aluminum content (AC1) of the first powder material, and further including forming a green body from the mixture, and sintering the green body and forming a ceramic body having a first type of grain having an average grain size of not greater than about 8 times the first average particle size (PS1).

A solid ionic conducting material for use in an electrochemical device comprises an oxyhydroxide or hydrated oxide derived from of an oxide with a perovskite, Brownmillerite, layered oxide, and/or K.sub.4CdCl.sub.6 structure, the elemental composition of the initial oxide being selected to provide suitable conduction properties for the derived anhydrous or hydrated oxyhydroxide or hydrated oxide. A method of making such a solid ionic conducting material, including treatment with water, and an electrochemical device incorporating such a solid ionic conducting material (optionally as an electrolyte) are also disclosed.