A cBN sinter comprising cubic boron nitride grains and a binder phase, the binder phase comprising Ti.sub.2CN and Co.sub.2B, wherein the ratio I.sub.Ti2CN/I.sub.Co2B of a peak intensity I.sub.Ti2CN assigned to Ti.sub.2CN appearing at 2θ = 41.9° to 42.2° to a peak intensity I.sub.TiAl3 assigned to Co.sub.2B appearing at 2θ = 45.7° to 45.9° is in a range of 0.5 and 2.0 in an XRD measurement.

A dielectric ceramic composition contains dielectric particles containing a main component represented by a composition formula (Ba.sub.1-x-ySr.sub.xCa.sub.y).sub.m(Ti.sub.1-zZr.sub.z)O.sub.3 and grain boundaries present between the dielectric particles. The values of m, x, y, and z in the composition formula are all molar ratios. In the composition formula, 0.9≤m≤1.4, 0≤x<1.0, 0<y≤1.0, 0.9≤(x+y)≤1.0, and 0.9≤z≤1.0 are satisfied. The dielectric particles contain specific structural particles having a predetermined intragranular structure, and each of the specific structural particles intragranularly includes a first region and a second region having different Ca concentrations from each other. C2/C1 is less than 0.8 in which C1 is an average value of the Ca concentration in the first region and C2 is an average value of the Ca concentration in the second region.

A thermoelectric conversion material formed of a sintered body containing magnesium silicide as a main component contains 0.5 mass % or more and 10 mass % or less of aluminum oxide. The aluminum oxide is distributed at a crystal grain boundary of the magnesium silicide.

A dielectric substance includes a core-shell grain having a twin crystal structure. An interface of the twin crystal structure of the core-shell grain extends from a shell on one side, passes through a core, and extends to the shell on the other side.

A method of treating a ceramic body in a glass making process includes delivering a molten glass to a heated ceramic body, the ceramic body including a ceramic phase and an intergranular glass phase, the molten glass being in contact with a surface of the ceramic body. The method further includes contacting the ceramic body with a first electrode and contacting the molten glass with a second electrode. The method further includes applying an electric field between the first electrode and the second electrode to create an electric potential difference across the ceramic body between the first and second electrodes, the electric potential difference being less than an electrolysis threshold of the ceramic phase and the intergranular glass phase. The intergranular glass phase demixes under driven diffusion in the applied electric field and mobile cations in the intergranular glass phase enrich proximate one of the first and second electrode.

Polycrystalline cubic boron nitride compact include a body having sintered microcrystalline cubic boron nitride in a matrix of binder material. The microcrystalline cubic boron nitride particles have a size ranging from 2 microns to 50 microns. The particles of microcrystalline cubic boron nitride include a plurality of sub-grains, each sub-grain having a size ranging from 0.1 micron to 2 microns. The compacts are manufactured in a high pressure—high temperature (HPHT) sintering process. The compacts exhibit intergranular defect formation following introduction of wear. The sub-grains promote crack propagation based on micro-chipping rather than on a cleavage mechanism and, in sintered bodies, cracks propagate intergranularly rather than intragranularly, resulting in increased toughness and improved wear characteristics as compared to monocrystalline cubic boron nitride. The compacts are suitable for use as abrasive tools.

An aluminum nitride-based sintered compact includes: aluminum nitride crystal particles containing Mg; composite oxide containing a rare earth element and Al, the composite oxide having a garnet crystal structure; and composite oxynitride containing Mg and Al. Particles of the composite oxide and particles of the composite oxynitride are interspersed between the aluminum nitride crystal particles. The composite oxide may include Y. A content of Mg in the aluminum nitride crystal particles may fall in a range of 0.1 mol % or more and 1.0 mol % or less, based on a total of all metal elements contained in the aluminum nitride crystal particles taken as 100 mol %. A semiconductor holding device includes the aluminum nitride-based sintered compact; and an electrostatic adsorptive electrode.

The invention relates to α/β-sialon-based materials. The invention particularly relates to α/β-sialon-based materials that have an improved sintering activity and impart high edge strength to the sintered molded articles made of said materials.

Provided is a ferrite sintered magnet including: magnetoplumbite type ferrite crystal grains; and a two-grain boundary interposed between the ferrite crystal grains. The two-grain boundary contains Ca and La, and an atomic ratio Ca/La at the two-grain boundary is 0.3 to 3.0.

In some examples, a method including forming a layer of a slurry composition between a first ceramic or CMC part and a second ceramic or CMC part. The slurry composition includes a carrier material; and a plurality of solid particles in the carrier material. The plurality of solid particles includes first silicon carbide (SiC) particles defining a first average particle size, second SiC particles defining a second average particles size that is less than the first average particles size, and reactive additive particles. The method includes heating the layer of slurry composition to react the plurality of reactive additive particles to fuse the plurality of first SiC particles and the plurality of second SiC particles together with the reactive additive particles, wherein the fused layer of the slurry composition forms a joint layer that joins the first ceramic or CMC part to the second ceramic or CMC part.