There are provided: a sintered material having an excellent wear resistance even under a high speed cutting condition; a tool using the sintered material; and a method of producing the sintered material. The sintered material includes: a first particle group including a particle having a cubic rock-salt structure represented by Al.sub.(1-x)Cr.sub.xN (formula (1)) (where x satisfies 0.2≦x≦0.8); and a second particle group including a particle of at least one first compound selected from a group consisting of oxide and oxynitride of aluminum, zirconium, yttrium, magnesium, and hafnium.

Disclosed herein are compounds, methods, and tools which comprise tungsten borides and mixed transition metal borides.

Provided is a zinc oxide-based sputtering target that enables production of a zinc oxide-based sputtered film having higher transparency and electrical conductivity. The zinc oxide-based sputtering target of the present invention is composed of a zinc oxide-based sintered body including zinc oxide crystal grains as a main phase and spinel phases as a dopant-containing grain boundary phase, and the zinc oxide-based sputtering target has a degree of (002) orientation of ZnO of 80% or greater at a sputtering surface, a density of the zinc oxide-based sintered body of 5.50 g/cm.sup.3 or greater, the number of the spinel phases per area of 20 counts/100 μm.sup.2 or greater, and a spinel phase distribution index of 0.40 or less.

A dielectric ceramic composition and a multilayer ceramic capacitor comprising the same are provided. The dielectric ceramic composition includes a BaTiO.sub.3-based base material main ingredient and an accessory ingredient, where the accessory ingredient includes dysprosium (Dy) and cerium (Ce) as first accessory ingredients. A total content of Dy and Ce is greater than 0.25 mol % and equal to or less than 1.0 mol % based on 100 mol % of the base material main ingredient.

A piezoelectric element includes a piezoelectric body having a main phase configured by lead zirconate titanate and a heterogenous phase configured by a different component to lead zirconate titanate, and a pair of electrodes provided on the piezoelectric body. The piezoelectric body has a surface region within 10 μm of a surface, and an inner region more than 10 μm from the surface. A surface area coverage of the heterogenous phase in a cross section of the surface region is at least 0.75% greater than a surface area coverage of the heterogenous phase in a cross section of the inner region.

The present invention provides a piezoelectric material not containing lead and potassium, having a high relative density, a high Curie temperature, and a high mechanical quality factor, and exhibiting good piezoelectricity. The piezoelectric material contains 0.04 percent by mole or more and 2.00 percent by mole or less of Cu relative to 1 mol of metal oxide represented by General formula (1) below.
((Na.sub.1-zLi.sub.z).sub.xBa.sub.1-y)(Nb.sub.yTi.sub.1-y)O.sub.3 (in Formula, 0.70≦x≦0.99, 0.75≦y≦0.99, and 0<z<0.15, and x<y)  General formula (1)

An abrasive article, comprising a polycrystalline material comprising abrasive grains and a filler material having an average negative coefficient of thermal expansion (CTE) within a range of temperatures between about 70 K to about 1500 K. A method of forming an abrasive article, comprising preparing an abrasive material, preparing a filler material having an average negative coefficient of thermal expansion (CTE) within a range of temperatures between about 150 K to about 1500 K, and forming a polycrystalline material comprising grains of the abrasive material and the filler material.

A sintered body of the present invention is a sintered body including a first material and cubic boron nitride. The first material is partially-stabilized ZrO.sub.2 including 5 to 90 volume % of Al.sub.2O.sub.3 dispersed in crystal grain boundaries or crystal grains of partially-stabilized ZrO.sub.2.

Polycrystalline diamond compacts having parting compound within the interstitial volumes are disclosed herein. In one embodiment, a polycrystalline diamond compact includes a polycrystalline diamond body having a plurality of diamond grains bonded together in diamond-to-diamond bonds, interstitial volumes positioned between the adjacent diamond grains, and a parting compound positioned in at least a portion of the interstitial volumes of the polycrystalline diamond body.

Polycrystalline diamond compacts having interstitial diamonds and methods of forming polycrystalline diamond compact shaving interstitial diamonds with a quench cycle are described herein. In one embodiment, a polycrystalline diamond compact includes a substrate and a polycrystalline diamond body attached to the substrate. The polycrystalline diamond body includes a plurality of inter-bonded diamond grains that are attached to one another in an interconnected network of diamond grains and interstitial pockets between the inter-bonded diamond grains, and a plurality of interstitial diamond grains that are positioned in the interstitial pockets. Each of the plurality of interstitial diamond grains are attached to a single diamond grain of the interconnected network of diamond grains or other interstitial diamond grains.