An epitaxy substrate and a method of manufacturing the same are provided. The epitaxy substrate includes a device substrate and a handle substrate. The device substrate has a first surface and a second surface opposite to each other, and a bevel disposed between the first and the second surfaces. The handle substrate is bonded to the second surface of the device substrate, wherein the oxygen content of the device substrate is less than the oxygen content of the handle substrate, and a bonding angle greater than 90° is between the bevel of the device substrate and the handle substrate.

The disclosure describes techniques for forming a surface layer of an article including a CMC using a cast. In some examples, the surface layer includes three-dimensional surface features, which may increase adhesion between the CMC and a coating on the CMC. In some examples, the surface layer may include excess material, with or without three-dimensional surface features, which is on the CMC. The excess material may be machined to remove some of the excess material and facilitate conforming the article to dimensional tolerances, e.g., for fitting the article to another component. The excess material may reduce a likelihood that the CMC (e.g., reinforcement material in the CMC) is damaged by the machining.

A ceramic bonding material including at least one fibrous material, a flux agent and a thickening agent wherein the ceramic bonding material fired at a set temperature to bond the two adjacent substrate faces.

The present application discloses a contact, which comprises a contact opening, and a Ti layer, a glue layer and a tungsten layer which completely fill the contact opening; the Ti layer is subjected to annealing treatment; the tungsten layer comprises a tungsten seed layer and a tungsten body layer; the glue layer consists of a TiN layer which is divided into a plurality of TiN sub-layers, all or part of the TiN sub-layers are subjected to the annealing treatment, and the size of grains of the TiN sub-layer subjected to the annealing treatment is limited by the thickness of the corresponding TiN sub-layer. The present application further discloses a method for making a contact. The present application can prevent the annealing treatment of the TiSi layer from producing large lattice grains in the glue layer, thus can make the tungsten seed layer be a continuous structure.

A method to produce a protective surface layer having a predetermined topography on a ceramic matrix composite is described. The method includes applying a slurry layer to a surface of a fiber preform, and drying the slurry layer to form a particulate layer. A surface of the particulate layer is machined to improve surface smoothness and to form a machined surface. A ceramic tape is attached to the machined surface, and a tool comprising one or more features to be imprinted is placed on the ceramic tape, thereby forming a compression assembly. Heat and pressure are applied to the compression assembly to consolidate and bond the ceramic tape to the machined surface, while the one or more features of the tool are imprinted. Thus, a protective surface layer having a predetermined topography is formed.

A method of manufacturing an epitaxy substrate is provided. A handle substrate is provided. A beveling treatment is performed on an edge of a device substrate such that a bevel is formed at the edge of the device substrate, wherein a thickness of the device substrate is greater than 100 μm and less than 200 μm. An ion implantation process is performed on a first surface of the device substrate to form an implantation region within the first surface. A second surface of the device substrate is bonded to the handle substrate for forming the epitaxy substrate, wherein a bonding angle greater than 90° is provided between the bevel of the device substrate and the handle substrate, and a projection length of the bevel toward the handle substrate is between 600 μm and 800 μm.

A member for a semiconductor manufacturing apparatus includes a ceramic plate having an upper surface serving as a wafer mounting surface and incorporating an electrode, a ceramic dense plug disposed adjacent to a lower surface side of the ceramic plate and ceramic-bonded to the ceramic plate by a ring-shaped joint portion, a metal cooling plate joined to the lower surface of the ceramic plate in a portion other than the ring-shaped joint portion, and a gas flow channel. The gas flow channel includes a gas discharge hole that passes completely through the ceramic plate in the thickness direction of the ceramic plate and an internal gas flow channel that passes from the upper surface to the lower surface of the dense plug while winding through the dense plug. The gas flow channel passes inside of an inner periphery of the joint portion.

This copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of silicon nitride, wherein the copper member and the ceramic member are bonded to each other, a Mg—N compound phase extending from a ceramic member side to a copper member side is present at a bonded interface between the copper member and the ceramic member, and at least a part of the Mg—N compound phase enters into the copper member.

An airfoil includes a ceramic matrix composite airfoil core that defines an airfoil portion and a root portion. The ceramic matrix composite airfoil core is subject to core thermal growth. A platform includes a ceramic matrix composite that wraps around the root portion. The platform is subject to platform thermal growth. A buffer layer is located between the root portion and the platform. The buffer layer absorbs a mismatch between the core thermal growth and the platform thermal growth.

Embodiments of the invention generally relate to solid state battery structures, such as Li-ion batteries, methods of fabrication and tools for fabricating the batteries. One or more electrodes and the separator may each be cast using a green tape approach wherein a mixture of active material, conductive additive, polymer binder and/or solid electrolyte are molded or extruded in a roll to roll or segmented sheet/disk process to make green tape, green disks or green sheets. A method of fabricating a solid state battery may include: preparing and/or providing a green sheet of positive electrode material; preparing and/or providing a green sheet of separator material; laminating together the green sheet of positive electrode material and the green sheet of separator material to form a laminated green stack; and sintering the laminated green stack to form a sintered stack comprising a positive electrode and a separator.