C04B2237/121

Method for manufacture of a multi-layer plate device

A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The wetting and flow of the joining material is controlled by the selection of the joining material, the joining temperature, the joining atmosphere, and other factors. The ceramic pieces may be aluminum nitride and the pieces may be brazed with an aluminum alloy under controlled atmosphere. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck.

Semiconductor Substrate
20200144154 · 2020-05-07 ·

A semiconductor substrate includes a dielectric insulation layer and a first metallization layer attached to the dielectric insulation layer. The dielectric insulation layer includes a first material having a thermal conductivity of between 25 and 180 W/mK, and an insulation strength of between 15 and 50 kV/mm, and an electrically conducting or semiconducting second material evenly distributed within the first material.

METHOD FOR MANUFACTURING CERAMIC-METAL LAYER ASSEMBLY, METHOD FOR MANUFACTURING CERAMIC CIRCUIT BOARD, AND METAL-BOARD-JOINED CERAMIC BASE MATERIAL BOARD
20200146144 · 2020-05-07 ·

Provided is a method for manufacturing a metal-layer-joined ceramic base material board, in which at least one scribe line is formed, on each of the front and back surfaces of a ceramic base material board, along dividing lines for dividing the ceramic base material board into a plurality of ceramic boards, a metal board covering at least a portion of the dividing lines is joined to each of the front and back surface of the ceramic base material board, the metal boards are etched along the dividing lines to form a plurality of metal layers, and the plurality of metal layers are joined to each of the front and back surfaces of the ceramic base material board.

POWER MODULE SUBSTRATE AND POWER MODULE
20200135612 · 2020-04-30 · ·

A power module substrate includes an insulating substrate and a metal plate. The metal plate is joined to the insulating substrate with a brazing material in between. As to surface roughness of a lateral surface of the metal plate in a thickness direction, the surface roughness of at least a corner part farthest from a center of the metal plate in plan view is larger than the surface roughness of plane parts sandwiching the corner part.

DOUBLE-SEALED FUEL ROD END PLUG FOR CERAMIC-CONTAINING CLADDING

The invention relates to sealing a fuel rod composite cladding tube composed of silicon carbide regardless of the fuel rod cladding design architecture (e.g., monolithic, duplex with monolithic SiC on the inside and a composite made with SiC fibers and SiC matrix on the outside) preferably with sealed SiC end plug caps, additionally sealed with an interior braze and exterior SiC final coating, thus providing a double sealed end plug barrier effective at retaining gas tightness and providing mechanical strength for the sealed end joint while providing high chemical resistance.

METHOD FOR PRODUCING CERAMIC-ALUMINUM BONDED BODY, METHOD FOR PRODUCING POWER MODULE SUBSTRATE, CERAMIC-ALUMINUM BONDED BODY, AND POWER MODULE SUBSTRATE
20200111722 · 2020-04-09 ·

A method for producing a ceramic-aluminum bonded body obtained by bonding a ceramic member and an aluminum member, the aluminum member before bonding being composed of aluminum having a purity of 99.0 mass % or higher and 99.9 mass % or lower, includes a heat treatment step of subjecting the aluminum member to a heat treatment in a range of 400 C. or higher and lower than a solidus temperature, and a bonding step of bonding the aluminum member after the heat treatment step and the ceramic member via a brazing filler material including Si.

SINTERED BODY, SUBSTRATE, CIRCUIT BOARD, AND MANUFACTURING METHOD OF SINTERED BODY

A sintered body includes a crystal grain containing silicon nitride, and a grain boundary phase. If dielectric losses of the sintered body are measured while applying an alternating voltage to the sintered body and continuously changing a frequency of the alternating voltage from 50 Hz to 1 MHz, an average value .sub.A of dielectric losses of the sintered body in a frequency band from 800 kHz to 1 MHz and an average value .sub.B of dielectric losses of the sintered body in a frequency band from 100 Hz to 200 Hz satisfy an expression |.sub.A.sub.B|0.1.

Bonded body, power module substrate with heat sink, heat sink, method of manufacturing bonded body, method of manufacturing power module substrate with heat sink, and method of manufacturing heat sink

The present invention is a bonded body in which an aluminum member constituted by an aluminum alloy, and a metal member constituted by copper, nickel, or silver are bonded to each other. The aluminum member is constituted by an aluminum alloy in which a solidus temperature is set to be less than a eutectic temperature of a metal element that constitutes the metal member and aluminum. A Ti layer is formed at a bonding portion between the aluminum member and the metal member, and the aluminum member and the Ti layer, and the Ti layer and the metal member are respectively subjected to solid-phase diffusion bonding.

Electrostatic chuck for clamping in high temperature semiconductor processing and method of making same

An electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of 500 C. to 750 C. The top surface may be sapphire. The top surface is attached to the lower portion of the electrostatic chuck using a braze layer able to withstand corrosive processing chemistries. A method of manufacturing an electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of 500 C. to 750 C.

Temperature barrier coating for rim-rotor

A rim-rotor assembly has an annular structure including a composite rim and a hub. Blades project from the hub, tips of the blades contacting the annular structure, the blades configured to be loaded in compression against the annular structure. A thermal barrier is in the annular structure, the thermal barrier defining at least part of a radially inward surface of the annular structure. The tips of the blades contact the thermal barrier, the thermal barrier being a thermal barrier coating.