Patent classifications
C04B2237/124
Solder material, method for producing a solder material of this type and use of a solder material of this type in order to connect a metal layer to a ceramic layer
A solder material (30) for bonding a metal layer (20) to a ceramic layer (10), in particular for forming a metal-ceramic substrate as a carrier for electrical components, comprising: a base material and an active metal, wherein the solder material (30) is a foil comprising the base material in a first layer (31) and the active metal in a second layer (32), and wherein the foil has a total thickness (GD) which is less than 50 μm, preferably less than 25 μm and particularly preferably less than 15 μm.
INSULATED CIRCUIT BOARD
In an insulating circuit substrate, aluminum sheets formed of aluminum or an aluminum alloy are laminated and bonded to a surface of a ceramic substrate and, in the aluminum sheets, Cu is solid-solubilized at a bonding interface with the ceramic substrate and a ratio B/A between a Cu concentration A mass % at the bonding interface and a Cu concentration B mass % at a position of 100 μm in a thickness direction from the bonding interface to the aluminum sheets side is 0.30 or more and 0.85 or less.
BONDED BODY, CERAMIC COPPER CIRCUIT SUBSTRATE, AND SEMICONDUCTOR DEVICE
A bonded body according to an embodiment includes a ceramic substrate, a copper plate, and a bonding layer that is located on at least one surface of the ceramic substrate and bonds the ceramic substrate and the copper plate. The bonding layer includes titanium. The bonding layer includes first and second regions; the first region includes a layer including titanium as a major component; the layer is formed at an interface of the bonding layer with the ceramic substrate; and the second region is positioned between the first region and the copper plate. The bonded body has a ratio M1/M2 of a titanium concentration M1 at % in the first region and a titanium concentration M2 at % in the second region that is not less than 0.1 and not more than 5 when the Ti concentrations are measured by EDX respectively in measurement regions in the first and second regions.
Joining Method
Provided is a method that allows for firm joining of power module components even if a joining area is large. The method includes: forming an oxygen ion conductor layer on a surface of one of a first member to be joined containing metal and a second member to be joined containing ceramic; arranging the first member to be joined and the second member to be joined so that they are in contact with each other via the oxygen ion conductor layer; connecting the first member to be joined to one of a positive electrode side and a negative electrode side of a voltage application device and the second member to be joined to the other; and applying a voltage between the first member to be joined and the second member to be joined to join the first member to be joined and the second member to be joined together.
Method for manufacturing power module substrate
A method for manufacturing a power module substrate includes a first lamination step of laminating a ceramic substrate and a copper sheet through an active metal material and a filler metal having a melting point of 660° C. or lower on one surface side of the ceramic substrate; a second lamination step of laminating the ceramic substrate and an aluminum sheet through a bonding material on the other surface side of the ceramic substrate; and a heating treatment step of heating the ceramic substrate, the copper sheet, and the aluminum sheet laminated together, and the ceramic substrate and the copper sheet, and the ceramic sheet and the aluminum sheet are bonded at the same time.
Substrate for power modules, substrate with heat sink for power modules, and power module
The present invention provides a power module substrate including an insulating substrate, a circuit layer which is formed on one surface of the insulating substrate, and a metal layer which is formed on the other surface of the insulating substrate, in which the circuit layer has a first aluminum layer made of aluminum or an aluminum alloy which is bonded to the insulating substrate and a first copper layer made of copper or a copper alloy which is bonded to the first aluminum layer by solid-phase diffusion, the metal layer has a second aluminum layer made of aluminum or an aluminum alloy, and a relationship between a thickness t.sub.1 of the circuit layer and a thickness t.sub.2 of the second aluminum layer of the metal layer satisfy t.sub.1<t.sub.2.
Shock absorbing member
A shock absorbing member 50 having a ceramic bonded body 15 having: a plurality of first sheet-like members 5 each having a ceramic containing 60 mass % or more of boron carbide and each having a thickness of 0.1 to 50 mm; and a bonding layer arranged between the first sheet-like members 5 adjacent to each other, the bonding layer bonding surfaces to be bonded facing each other of the first sheet-like members adjacent to each other, wherein the bonding layer has a bonding material containing at least one metal selected from the group consisting of aluminum, copper, silver, and gold.
Light-emitting ceramic and light-emitting device
A light-emitting ceramic and a light-emitting device. The light-emitting ceramic comprises a YAG substrate and light-emitting centers and diffusion particles evenly dispersed in the YAG substrate. The light-emitting centers are lanthanide-doped YAG fluorescent powder particles of 10-20 μm in grain size. The particle size of the scattering particles is 20-50 nm. The YAG substrate is a lanthanide-doped YAG ceramic. Also, the grain size of the YAG substrate is less than the grain size of the YAG fluorescent powder particles.
Metal-ceramic substrate
A metal-ceramic substrate having at least one ceramic layer (2), which is provided on a first surface side (2a) with at least one first metallization (3) and on a second surface side (2b), opposite from the first surface side (2a), with a second metallization (4), wherein the first metallization (3) is formed by a film or layer of copper or a copper alloy and is connected to the first surface side (2a) of the ceramic layer (2) with the aid of a “direct copper bonding” process. The second metallization (4) is formed by a layer of aluminum or an aluminum alloy.
ADAPTER ELEMENT FOR CONNECTING AN ELECTRONICS COMPONENT TO A HEAT SINK ELEMENT, SYSTEM COMPRISING AN ADAPTER ELEMENT OF THIS KIND, AND METHOD FOR PRODUCING AN ADAPTER ELEMENT OF THIS KIND
An adapter element (10) for connecting an electronic component (30) to a heat sink element (20), including an insulation layer (15) extending along a main extension plane (HSE), and at least a first web element (11) and a second web element (12), which are arranged next to each other in a direction parallel to the main extension plane (HSE), forming a free area (13), which, in the assembled state, are arranged between the insulating layer (15) and the electronic component (30) in a direction running perpendicular to the main extension plane (HSE), and on whose front sides (18) facing away from the insulating layer (15) the electronic component (30) is arranged in the assembled state, wherein a distance (A) between the first web element (11) and the second web element (12), measured in a plane parallel to the main extension plane (HSE), is smaller than 350 μm.