An electric circuit board includes an insulating substrate, a metal plate, and a brazing material with which the insulating substrate and the metal plate are joined together. The metal plate has a side surface over which recessed portions are scattered. The side surface of the metal plate has lines in regions around the recessed portions. The metal plate is made of copper or a copper alloy. The brazing material has a side surface that is continuous with the side surface of the metal plate. The brazing material is a silver-copper brazing alloy. A ratio of copper on the side surface of the brazing material is higher than a copper component ratio of the silver-copper brazing alloy.

A light generator comprises a light conversion device and a light source arranged to apply a light beam to the light conversion element. The light conversion device includes an optoceramic or other solid phosphor element comprising one or more phosphors embedded in a ceramic, glass, or other host, a metal heat sink, and a solder bond attaching the optoceramic phosphor element to the metal heat sink. The optoceramic phosphor element does not undergo cracking in response to the light source applying a light beam of beam energy effective to heat the optoceramic phosphor element to the phosphor quenching point.

A sintered body includes a crystal grain containing silicon nitride, and a grain boundary phase. If dielectric losses of the sintered body are measured while applying an alternating voltage to the sintered body and continuously changing a frequency of the alternating voltage from 50 Hz to 1 MHz, an average value ε.sub.A of dielectric losses of the sintered body in a frequency band from 800 kHz to 1 MHz and an average value ε.sub.B of dielectric losses of the sintered body in a frequency band from 100 Hz to 200 Hz satisfy an expression |ε.sub.A−ε.sub.B|≤0.1.

This thermoelectric conversion module is formed by electrically connecting, by a conductive member, one end of an n-type thermoelectric conversion element having a negative Seebeck coefficient and having a half-Heusler structure to one end of a p-type thermoelectric conversion element containing an oxide having a positive Seebeck coefficient at a temperature of 25° C. or higher. The conductive member is connected to the n-type thermoelectric conversion element and the p-type thermoelectric conversion element through a connection layer containing a conductive metal comprising silver, and the connection layer is characterized by further containing an oxide to reduce the bond resistance between the n-type thermoelectric conversion element and/or the p-type thermoelectric conversion element.

A bonded body according to an embodiment comprises a ceramic substrate, a copper plate, and a bonding layer provided on at least one surface of the ceramic substrate and bonding the ceramic substrate and the copper plate, in which the bonding layer contains Ag, Cu, Ti, and a first element being one or two selected from Sn and In, a Ti alloy of Ti and at least one selected from Ag, Cu, Sn, and In existing at a bonding boundary between the copper plate and the bonding layer, and the Ti alloy existing over not less than 30% per a length of 30 μm at the bonding boundary.

A bonded assembly according to the present embodiment, includes a metal plate and a ceramic substrate bonded to each other through a bonding layer containing Ag. In the bonded assembly, in a measurement region that is formed in a cross section formed by a thickness direction of the bonding layer and an orthogonal direction thereto, and that has a size of a length in the thickness direction of the bonding layer×a length of 200 μm in the orthogonal direction, a Ag-rich region having a Ag concentration of 60 at % or more has an area ratio of 70% or less to a Ag-poor region having a Ag concentration of 50 at % or less.

A method for assembling a zirconia part to a titanium element with braze, the method comprising the following steps: coating a surface of the titanium element with a niobium layer, positioning a braze between the zirconia part and the niobium, the braze being of gold or a gold alloy, heating the whole to a temperature higher than the melting temperature of the braze, and then cooling the whole, whereby an assembly comprising the zirconia part and the titanium element assembled by a brazing joint comprising a first portion of gold or a gold alloy, a second portion formed by a reaction layer comprising intermetallics of the AuNbTi system, and a third portion formed by an oxide reaction layer is obtained.

A method for manufacturing a power module substrate includes a first lamination step of laminating a ceramic substrate and a copper sheet through an active metal material and a filler metal having a melting point of 660° C. or lower on one surface side of the ceramic substrate; a second lamination step of laminating the ceramic substrate and an aluminum sheet through a bonding material on the other surface side of the ceramic substrate; and a heating treatment step of heating the ceramic substrate, the copper sheet, and the aluminum sheet laminated together, and the ceramic substrate and the copper sheet, and the ceramic sheet and the aluminum sheet are bonded at the same time.

A semiconductor device comprising: a semiconductor component; a diamond heat spreader; and a metal bond, wherein the semiconductor component is bonded to the diamond heat spreader via the metal bond, wherein the metal bond comprises a layer of chromium bonded to the diamond heat spreader and a further metal layer disposed between the layer of chromium and the semiconductor component, and wherein the semiconductor component is configured to operate at an areal power density of at least 1 kW/cm.sup.2 and/or a linear power density of at least 1 W/mm.

A support substrate (1), in particular a metal-ceramic substrate, as a support for electric components, comprising: —at least one metal layer (10) and—an insulating element (30), in particular a ceramic element, a glass element, a glass ceramic element, and/or a high temperature-resistant plastic element. The at least one metal layer (10) and the insulating element (30) extend along a main extension plane (HSE) and are arranged one over the other in a stacking direction (S) running perpendicularly to the main extension plane (HSE), wherein in a completed support substrate (1), a binding layer (12) is formed between the at least one metal layer (10) and the insulating element (30), and an adhesive layer (13) of the binding layer (12) has a surface resistance which is greater than 5 Ohm/sq.