Provided are: an apparatus and a method for producing a (metal plate)-(ceramic board) laminated assembly, a bonding material and a metal plate during the bonding of the metal plate to the ceramic board through the bonding-material layer and an apparatus and a method for producing a power-module substrate. An apparatus for producing a (metal plate)-(ceramic board) laminated assembly by laminating a metal plate having a temporary bonding material formed thereon on a ceramic board having a bonding-material layer formed thereon, the apparatus being equipped with: a conveying device which conveys the metal plate onto the ceramic board to laminate the ceramic board and the metal plate on each other; and a heating device which is arranged in the middle of a passage of the conveyance of the metal plate by the conveying device and melts the temporary-bonding material on the metal plate.

An adapter element (10) for connecting an electronic component (30) to a heat sink element (20), including an insulation layer (15) extending along a main extension plane (HSE), and at least a first web element (11) and a second web element (12), which are arranged next to each other in a direction parallel to the main extension plane (HSE), forming a free area (13), which, in the assembled state, are arranged between the insulating layer (15) and the electronic component (30) in a direction running perpendicular to the main extension plane (HSE), and on whose front sides (18) facing away from the insulating layer (15) the electronic component (30) is arranged in the assembled state, wherein a distance (A) between the first web element (11) and the second web element (12), measured in a plane parallel to the main extension plane (HSE), is smaller than 350 μm.

A method for manufacturing a ceramic heater-type glow plug that includes: a ceramic heater; a metallic outer cylinder that holds the ceramic heater at one end and has the other end inserted in and fixed to a metallic housing; and lead wire that is connected to the ceramic heater and electrifies the ceramic heater, the method for manufacturing a ceramic heater-type glow plug includes the steps of: forming a metalized layer in a region of the ceramic heater that is connected to the lead wire; press-inserting at least the metalized layer of the ceramic heater in a connection fitting that connects the ceramic heater and the lead wire; and heating the ceramic heater and the connection fitting at a temperature at which a material for forming the metalized layer is brought into a semi-molten state and joining by mass transfer between the connection fitting and a solid layer of the metalized layer.

Provided is a bonded substrate mainly for mounting a power semiconductor in which the reliability to a thermal cycle has been enhanced as compared with a conventional one. In a bonded substrate in which a copper plate is bonded to one or both main surface(s) of a nitride ceramic substrate, a bonding layer consisting of TiN intervenes between the nitride ceramic substrate and the copper plate and is adjacent at least to the copper plate, and an Ag distribution region in which Ag atoms are distributed is set to be present in the copper plate. Preferably, an Ag-rich phase is set to be present discretely at an interface between the bonding layer and the copper plate.

A power semiconductor substrate comprising an insulating planar base, at least one conductor track and at least one contact area as part of the conductor track, wherein a layer of a metallic material is disposed on the contact area by means of pressure sintering. The associated method comprises the steps of: producing a power semiconductor substrate that includes a planar insulating base, conductor tracks and contact areas; arranging a pasty layer, composed of a metallic material and a solvent, on at least one contact area of the power semiconductor substrate; and applying pressure to the pasty layer.

A copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of a silicon nitride, wherein the copper member and the ceramic member are bonded to each other, a magnesium oxide layer is provided on a ceramic member side of a bonded interface between the copper member and the ceramic member, a Mg solid solution layer is provided between the magnesium oxide layer and the copper member and contains Mg in a state of a solid solution in a Cu primary phase, and a magnesium nitride phase is present on a magnesium oxide layer side of the Mg solid solution layer.

A carrier substrate (1) that includes an insulation layer (11) and a metal layer (12), wherein a flank profile (2), in particular an etching flank profile, at least zonally borders the metal layer (12) in a primary direction (P) extending parallel to the main extension plane (HSE), wherein, viewed in the primary direction (P), the flank profile (2) extends from a first edge (15) on an upper side (31) of the metal layer (12), which faces away from the insulation layer (11), to a second edge (16) on a lower side (32) of the metal layer (12), which faces the insulation layer (11), characterized in that the flank profile (2), viewed in the primary direction (P), has at least one local maximum (21) and at least one local minimum (22).

A bonded body includes an aluminum member made of an aluminum alloy and a copper member made of copper or a copper alloy, in which the aluminum member is made of an Al—Mn-based alloy containing Mn, an Mn concentration C.sub.0 of the entire aluminum member is in a range of 0.4 mass % or more and 1.5 mass % or less, and, when an Mn concentration in a region excluding a precipitate in the aluminum member is defined as an Mn solid solution concentration C.sub.1 and a value obtained by subtracting the Mn solid solution concentration C.sub.1 from the Mn concentration C.sub.0 of the entire aluminum member is defined as an Mn precipitate concentration C.sub.2, a ratio C.sub.1/C.sub.2 of the Mn solid solution concentration C.sub.1 to the Mn precipitate concentration C.sub.2 is in a range of 0.1 or more and 2.7 or less.

A module having a power semiconductor device and a ceramic capacitor which is configured for cooling the power semiconductor device.

Electrical insulating properties between adjacent copper plates are improved while a defect of a bonded substrate which is caused by concentration of stress to end portions of the copper plates is prevented. A bonded substrate includes a silicon nitride ceramic substrate, a copper plate, and a bonding layer. The copper plate and the bonding layer are disposed on the silicon nitride ceramic substrate. The bonding layer bonds the copper plate to the silicon nitride ceramic substrate. The bonding layer includes: an interplate portion between the silicon nitride ceramic substrate and the copper plate; and a protruding portion protruding from between the silicon nitride ceramic substrate and the copper plate. Exposure of the silicon nitride ceramic substrate is prevented at a position where the protruding portion is disposed.