A copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of a silicon nitride, wherein the copper member and the ceramic member are bonded to each other, a magnesium oxide layer is provided on a ceramic member side of a bonded interface between the copper member and the ceramic member, a Mg solid solution layer is provided between the magnesium oxide layer and the copper member and contains Mg in a state of a solid solution in a Cu primary phase, and a magnesium nitride phase is present on a magnesium oxide layer side of the Mg solid solution layer.

A carrier substrate (1) that includes an insulation layer (11) and a metal layer (12), wherein a flank profile (2), in particular an etching flank profile, at least zonally borders the metal layer (12) in a primary direction (P) extending parallel to the main extension plane (HSE), wherein, viewed in the primary direction (P), the flank profile (2) extends from a first edge (15) on an upper side (31) of the metal layer (12), which faces away from the insulation layer (11), to a second edge (16) on a lower side (32) of the metal layer (12), which faces the insulation layer (11), characterized in that the flank profile (2), viewed in the primary direction (P), has at least one local maximum (21) and at least one local minimum (22).

A method for producing a member for a semiconductor manufacturing apparatus includes (a) a step of providing an electrostatic chuck, a supporting substrate, and a metal bonding material, the electrostatic chuck being made of a ceramic and having a form of a flat plate, the supporting substrate including a composite material having a difference in linear thermal expansion coefficient at 40 to 570° C. from the ceramic of 0.2×10.sup.−6/K or less in absolute value, and (b) a step of interposing the metal bonding material between a concave face of the supporting substrate and a face of the electrostatic chuck opposite to a wafer mounting face, and thermocompression bonding the supporting substrate and the electrostatic chuck at a predetermined temperature to deform the electrostatic chuck to the shape of the concave face.

A power module substrate includes an insulating substrate and a metal plate. The metal plate is joined to the insulating substrate with a brazing material in between. As to surface roughness of a lateral surface of the metal plate in a thickness direction, the surface roughness of at least a corner part farthest from a center of the metal plate in plan view is larger than the surface roughness of plane parts sandwiching the corner part.

A soldering material (1) for active soldering, in particular for active soldering of a metallization (3) to a carrier layer (2) comprising ceramics, wherein the soldering material comprises copper and is substantially silver-free.

A method for manufacturing an electrostatic chuck with multiple chucking electrodes made of ceramic pieces using metallic aluminum as the joining. The aluminum may be placed between two pieces and the assembly may be heated in the range of 770 C to 1200 C. The joining atmosphere may be non-oxygenated. After joining the exclusions in the electrode pattern may be machined by also machining through one of the plate layers. The machined exclusion slots may then be filled with epoxy or other material. An electrostatic chuck or other structure manufactured according to such methods.

A carrier substrate (1) that includes an insulation layer (11) and a metal layer (12), wherein a flank profile (2), in particular an etching flank profile, at least zonally borders the metal layer (12) in a primary direction (P) extending parallel to the main extension plane (HSE), wherein, viewed in the primary direction (P), the flank profile (2) extends from a first edge (15) on an upper side (31) of the metal layer (12), which faces away from the insulation layer (11), to a second edge (16) on a lower side (32) of the metal layer (12), which faces the insulation layer (11), characterized in that the flank profile (2), viewed in the primary direction (P), has at least one local maximum (21) and at least one local minimum (22).

A method for manufacturing an electrostatic chuck with multiple chucking electrodes made of ceramic pieces using metallic aluminum as the joining. The aluminum may be placed between two pieces and the assembly may be heated in the range of 770 C to 1200 C. The joining atmosphere may be non-oxygenated. After joining the exclusions in the electrode pattern may be machined by also machining through one of the plate layers. The machined exclusion slots may then be filled with epoxy or other material. An electrostatic chuck or other structure manufactured according to such methods.

Provided herein are energy storage devices. In some cases, the energy storage devices are capable of being transported on a vehicle and storing a large amount of energy. An energy storage device is provided comprising at least one liquid metal electrode, an energy storage capacity of at least about 1 MWh and a response time less than or equal to about 100 milliseconds (ms).

A method for the joining of ceramic pieces includes applying a layer of titanium on a first ceramic piece and applying a layer of titanium on a second ceramic piece; applying a layer of nickel on each of the layers of titanium on the first ceramic piece and the second ceramic piece; applying a layer of nickel phosphorous to each of the layers of nickel on the first ceramic piece and the second ceramic piece; assembling the first ceramic piece and the second ceramic piece with the layers of titanium, nickel, and nickel phosphorous therebetween; pressing the layer of nickel phosphorous of the first ceramic piece against the layer of nickel phosphorous of the second ceramic piece; heating the first ceramic piece and the second ceramic piece to a joining temperature in a vacuum; and cooling the first ceramic piece and the second ceramic piece. A hermetic seal is formed between the first ceramic piece and the second ceramic piece.