A cover lid for use with a semiconductor package is disclosed. First, a polyamide mask is applied to one surface of the lid plate. Next, the exposed areas of the surface, as well as the sides of the lid plate, are metallized. The polyamide mask can then be removed. This reduces pullback and shrinkage of the metallized layer, while lowering the manufacturing cost and process times.

A multilayer coil component including a magnetic part formed of a ferrite material, a non-magnetic part formed of a non-magnetic ferrite material, and a coiled conductive part embedded in the magnetic part and the non-magnetic part. The non-magnetic part has an Fe content of 36.0 to 48.5 mol % in terms of Fe.sub.2O.sub.3, a Zn content of 46.0 to 57.5 mol % in terms of ZnO, a V content of 0.5 to 5.0 mol % in terms of V.sub.2O.sub.5, a Mn content of 0 to 7.5 mol % in terms of Mn.sub.2O.sub.3, and a Cu content of 0 to 5.0 mol % in terms of CuO with respect to the sum of the Fe content in terms of Fe.sub.2O.sub.3, the Zn content in terms of ZnO, the V content in terms of V.sub.2O.sub.5, and if present, the Cu content in terms of CuO, and the Mn content in terms of Mn.sub.2O.sub.3.

An adapter element (10) for connecting an electronic component (30) to a heat sink element (20), including an insulation layer (15) extending along a main extension plane (HSE), and at least a first web element (11) and a second web element (12), which are arranged next to each other in a direction parallel to the main extension plane (HSE), forming a free area (13), which, in the assembled state, are arranged between the insulating layer (15) and the electronic component (30) in a direction running perpendicular to the main extension plane (HSE), and on whose front sides (18) facing away from the insulating layer (15) the electronic component (30) is arranged in the assembled state, wherein a distance (A) between the first web element (11) and the second web element (12), measured in a plane parallel to the main extension plane (HSE), is smaller than 350 μm.

A method for manufacturing an optical element is a method for manufacturing an optical element in which laser light is transmitted, reciprocated, or reflected, and the method includes a first step of obtaining a bonded element formed by subjecting a first element part and a second element part, both being transparent to laser light, to surface activated bonding with a non-crystalline layer interposed therebetween; and after the first step, a second step of crystallizing at least a portion of the non-crystalline layer by raising the temperature of the bonded element. In the second step, the temperature of the bonded element is raised to a predetermined temperature that is lower than the melting points of the first element part and the second element part.

The invention relates to a process for metallizing ferrite ceramics, which comprises the following steps: arrangement of a contact element composed of copper or a copper alloy on a surface of the ferrite ceramic, melting of the contact element at least in the region in which the contact element contacts the surface of the ferrite ceramic, and cooling of the contact element and the ferrite ceramic to below the melting point of copper or the copper alloy.

A ceramic substrate for an electrochemical element that includes a ceramic layer and a high-thermal-expansion-coefficient material layer that is laminated on the surface of the ceramic layer. The high-thermal-expansion-coefficient material layer has a higher coefficient of thermal expansion than the ceramic layer, and applies compressive stress to the ceramic layer.

The invention relates to a method of joining substrates. It is the object of the invention in this respect to join substrates of substrate materials together without having to exert an increased effort for a coating with additional coating processes to be carried out and to be able to achieve a good quality of the join connection in so doing. In the method in accordance with the invention a pretreatment of at least one join surface of a substrate to be joined is carried out in low pressure oxygen plasma prior to the actual joining. On the joining, a contact force acts on the substrates to be joined in the range 2 kPa to 5 MPa and in this process a heat treatment is carried out at an elevated temperature of at least 100° C. and at under pressure conditions of a maximum of 10 mbar, preferably <10.sup.−3 mbar.

An oxide ceramic having a principal component formed of a ferrite compound containing at least Sr, Co, and Fe, and zirconium in an amount of 0.05 to 1.0 wt. % on an oxide equivalent basis, and a ceramic electronic component using the oxide ceramic.

One example includes a method for fabricating a compound material. The method includes providing a first discrete material layer having a first thickness dimension. The first discrete material layer includes a first material having a first magnetic susceptibility. The method also includes depositing a second discrete material layer having a second thickness dimension over the first discrete material layer. The second discrete material layer can include a second material having a second magnetic susceptibility. The relative first and second thickness dimensions can be selected to provide a desired magnetic susceptibility of the compound material.

The present disclosure discloses the laminated ceramic chimp component including an element part having a ceramic main body and an internal electrode placed in the ceramic main body; an external electrode part having a first external electrode and a second external electrode, the first and second external electrodes being provided with side electrodes covering both side surfaces of the ceramic main body, respectively, upper electrodes covering portions of both sides of an upper surface of the ceramic main body, respectively, and lower electrodes covering portions of both sides of a lower surface of the ceramic main body, respectively; and a nano thin film layer formed of electric insulation material and applied to a region including the upper electrodes, the method for manufacturing the same and the atomic layer deposition apparatus for the same.