A method of forming a super hard polycrystalline construction comprises forming a liquid suspension of a first mass of nano-ceramic particles and a mass of particles or grains of super hard material having an average particle or grain size of 1 or more microns, dispersing the particles or grains in the liquid suspension to form a substantially homogeneous suspension, drying the suspension to form an admix of the nano-ceramic and super hard grains or particles, and forming a pre-sinter assembly comprising the admix. The pre-sinter assembly is then sintered to form a body of polycrystalline super hard material comprising a first fraction of super hard grains and a second fraction, the nano-ceramic particles forming the second fraction.

The super hard grains are spaced along at least a portion of the peripheral surface by one or more nano-ceramic grains, the super hard grains having a greater average grain size than that of the grains in the second fraction which have an average size of less than around 999 nm.

A method of forming a polycrystalline diamond comprises derivatizing a nanodiamond to form functional groups, and combining the derivatized nanodiamond with a microdiamond having an average particle size greater than that of the derivatized nanodiamond, and a metal solvent-catalyst. A polycrystalline diamond compact is prepared by adhering the polycrystalline diamond to a support, and an article such as a cutting tool may be prepared from the polycrystalline diamond compact.

Polycrystalline diamond compacts having parting compound within the interstitial volumes are disclosed herein. In one embodiment, a polycrystalline diamond compact includes a polycrystalline diamond body having a plurality of diamond grains bonded together in diamond-to-diamond bonds, interstitial volumes positioned between the adjacent diamond grains, and a parting compound positioned in at least a portion of the interstitial volumes of the polycrystalline diamond body.

Embodiments of the invention relate to non-cylindrical polycrystalline diamond compacts (“PDCs”), and methods of fabricating such non-cylindrical PDCs without substantially undercutting a cemented carbide substrate thereof from an overlying polycrystalline diamond (“PCD”) table thereof. According to various embodiments, a PDC includes a PCD table including an upper surface and a table non-cylindrical lateral periphery. The PDC includes a cemented carbide substrate bonded to the PCD table. In an embodiment, the cemented carbide substrate includes a substrate non-cylindrical lateral periphery that is not substantially undercut from the table non-cylindrical lateral periphery of the PCD table. In an embodiment, the PDC includes at least one alignment feature positioned on the cemented carbide substrate and/or the PCD table.

A compact, a superabrasive compact and a method of making the compact and superabrasive compact are disclosed. A compact may include a plurality of carbide particles, a binder, and a species. The binder may be dispersed among the plurality of tungsten carbide particles. The species may be dispersed in the compact, wherein the binder has a melting point from about 600° C. to about 1350° C. at ambient pressure. A superabrasive compact may include a diamond table and a substrate. The diamond table may be attached to the substrate. The substrate may have a binder. The melting point of the binder is from about 600° C. to about 1350° C. at high pressure from about 30 kbar to about 100 kbar.

Embodiments of the invention relate to polycrystalline diamond compacts (“PDCs”) and methods of fabricating such PDCs. In an embodiment, a PDC includes a substrate and a preformed polycrystalline diamond table including an interfacial surface bonded to the substrate and an opposing working surface. The preformed polycrystalline diamond table includes a proximal region extending from the interfacial surface to an intermediate location within the preformed polycrystalline diamond table that includes a metallic infiltrant infiltrated from the substrate, and a distal region extending from the working surface to the intermediate location that is substantially free of the metallic infiltrant. A boundary exists between the proximal and distal regions that has a nonplanar irregular profile characteristic of the metallic infiltrant having been infiltrated into the preformed polycrystalline diamond table.

A method of forming a cutting element comprises forming a first material comprising discrete coated particles within a container. The first material is pressed to form a first green structure comprising interbonded coated particles. A second material comprising additional discrete coated particles is formed over the first green structure within the container. The second material is pressed to form a second green structure comprising additional interbonded coated particles. The first green structure and the second green structure are sintered to form a multi-layered cutting table. Additional methods of forming a cutting element, a cutting element, and an earth-boring tool are also described.

A method is provided for producing an insulating circuit substrate with a heat sink including an insulating circuit substrate and a heat sink, the insulating circuit substrate including a circuit layer and a metal layer that are formed on an insulating layer, and the heat sink being bonded to the metal layer side. The method includes: an aluminum bonding layer forming step of forming an aluminum bonding layer formed of aluminum or an aluminum alloy having a solidus temperature of 650° C. or lower on the metal layer; and a heat sink bonding step of laminating a copper bonding material formed of copper or a copper alloy between the aluminum bonding layer and the heat sink and bonding the aluminum bonding layer, the copper bonding material, and the heat sink to each other by solid phase diffusion bonding.

A cBN-based ultra-high pressure sintered body contains cBN particles and a binder phase. The binder phase contains at least one of a nitride or oxide of Al or a nitride, carbide, or carbonitride of Ti, and a metal boride having an average particle diameter of 20 to 300 nm is dispersed in an amount of 0.1 to 5.0 vol % in the binder phase. The metal boride includes a metal boride (B) containing at least one of Nb, Ta, Cr, Mo, and W as a metal component and containing no Ti and a metal boride (A) containing only Ti as a metal component. In a case where a ratio (vol %) of the metal boride (A) in the metal boride is represented by V.sub.a and a ratio (vol %) of the metal boride (B) is represented by V.sub.b, a ratio of V.sub.b/V.sub.a is 0.1 to 1.0.

A ceramic bonding material including at least one fibrous material, a flux agent and a thickening agent wherein the ceramic bonding material fired at a set temperature to bond the two adjacent substrate faces.