A semiconductor apparatus includes first and second semiconductor chips, and a circuit board. The circuit board is a laminated board sequentially including an insulating plate, a circuit layer, and a metal layer. The circuit layer includes a first mounting portion on which the first semiconductor chip is installed, a second mounting portion on which the second semiconductor chip is installed, and a first and second upper surface slit provided between the first and second mounting portion and extending in a first direction. The metal layer includes a first lower surface slit extending in the first direction. In a plan view, the first mounting portion, the first upper surface slit, the second upper surface slit, and the second mounting portion are provided side by side in the second direction. The first lower surface slit is located within a range defined by the first and second upper surface slit.

Provided is a method for manufacturing a circuit board including: (a) preparing a mixture of a metal powder, an anti-sintering agent, and an activator; (b) immersing a dielectric substrate in the mixture; (c) forming a metal-containing layer on the surface of the dielectric substrate by heating the mixture under an inert atmosphere or under a reducing atmosphere; (d) forming a first metal layer on the metal-containing layer by electroless plating and forming a second metal layer thereon by electroplating; and (e) forming a metal pattern on the dielectric substrate, wherein the first metal layer includes Cu, Ni, Co, Au, Pd, or an alloy thereof, the second metal layer includes Cu, Ni, Fe, Co, Cr, Zn, Au, Ag, Pt, Pd, Rh, or an alloy thereof, and the method further includes performing heat treatment at least once after step (c).

In some examples, techniques of repairing and/or reinforcing oxide-oxide ceramic matrix composite (CMC) materials using a metallic material. In one example, a method including applying a metallic material at an edge of an oxide-oxide CMC substrate; and heating the metallic material to diffuse the metal material into the oxide-oxide CMC substrate at the edge. In another example, a method including applying a metallic material onto a damaged area of the oxide-oxide CMC; applying a reinforcing phase material onto the damaged area of the oxide-oxide CMC; and heating the metallic material to diffuse the metallic material into the oxide-oxide CMC and attach the reinforcing phase material to the damaged area of the oxide-oxide CMC.

The present disclosure relates to laminated armor materials for enhanced ballistic protection. In particular, the present disclosure relates to laminated armor materials comprising first and second armor materials and a laminated adhesive layer comprising nanomaterial fillers.

A joining layer of a joined body includes a joining material which contains, as a main component, a metal having a surface tension of 1000 mN/m or less at its melting point, and a metal layer which has a plurality of pores formed therein and in which at least some of the pores are impregnated with the joining material.

The present invention relates to a method for producing a metal-ceramic substrate (1) comprising: —providing a ceramic element (30) and at least one metal layer (10), wherein the ceramic element (30) and the at least one metal layer (10) extend along a main extension plane (HSE), —joining the ceramic element (30) to the at least one metal layer (10) to form a metal-ceramic substrate (1), in particular by means of a direct metal joining method, a hot isostatic pressing method and/or a soldering method, and —machining the at least one metal layer (10) by means of a machine tool (40) and/or laser light in order to define a geometry, at least in some portions, of a side face (15) of the at least one metal layer (10) not running parallel to the main extension plane (HSE).

A sintered body includes a crystal grain containing silicon nitride, and a grain boundary phase. If dielectric losses of the sintered body are measured while applying an alternating voltage to the sintered body and continuously changing a frequency of the alternating voltage from 50 Hz to 1 MHz, an average value ε.sub.A of dielectric losses of the sintered body in a frequency band from 800 kHz to 1 MHz and an average value ε.sub.B of dielectric losses of the sintered body in a frequency band from 100 Hz to 200 Hz satisfy an expression |ε.sub.A−ε.sub.B|≤0.1.

A metal-ceramic substrate (1) comprising an insulating layer (11) comprising a ceramic and having a first thickness (D1), and a metallization layer (12) bonded to the insulation layer (11) and having a second thickness (D2),
wherein the first thickness (D1) is less than 250 μm and the second thickness (D2) is greater than 200 μm and wherein the first thickness (D1) and the second thickness (D2) are dimensioned such that a ratio of an amount of the difference between a thermal expansion coefficient of the metallization layer (12) and a thermal expansion coefficient of the metal-ceramic substrate (1) to a thermal expansion coefficient of the metal-ceramic substrate (1)
has a value less than 0.25, preferably less than 0.2 and more preferably less than 0.15 or even less than 0.1.

A ceramic substrate is provided with a flat plate-shaped insulating base including a ceramic, a first brazing material layer provided on a first main surface of the insulating base, a second brazing material layer provided on a second main surface of the insulating base, a first metal layer including a metal and being fixed through the first brazing material layer to the insulating base on a first main surface-side, and a second metal layer including a metal and being fixed through the second brazing material layer to the insulating base on a second main surface-side. A difference between a thickness of the first brazing material layer and a thickness of the second brazing material layer at a given point is 4.0 .Math.m or less.

A method for producing a metal-ceramic substrate with a plurality of electrically conductive vias includes: attaching a first metal layer in a planar manner to a first surface side of a ceramic layer; after attaching the first metal layer, introducing a copper hydroxide or copper acetate brine into a plurality of holes in the ceramic layer delimiting a via, to form an assembly; converting the copper hydroxide or copper acetate brine into copper oxide; subjecting the assembly to a high-temperature step above 500° C. in which the copper oxide forms a copper body in the plurality of holes; and after converting the copper hydroxide or copper acetate brine into the copper oxide, attaching a second metal layer in a planar manner to a second surface side of the ceramic layer opposite the first surface side. The copper body produces an electrically conductive connection between the first and the second metal layers.