C04B2237/404

ALUMINUM NITRIDE SINTERED BODY, METHOD OF MAKING THE SAME, AND SEMICONDUCTOR MANUFACTURING EQUIPMENT COMPONENT USING ALUMINUM NITRIDE SINTERED BODY
20210017087 · 2021-01-21 ·

An aluminum nitride sintered body for use in a semiconductor manufacturing apparatus is provided. The aluminum nitride sintered body exhibits, in a photoluminescence spectrum thereof in a wavelength range of 350 nm to 700 nm obtained with 250 nm excitation light, a highest emission intensity peak within a wavelength range of 580 nm to 620 nm.

Joined body including ceramic member and metallic member and method for manufacturing joined body
10814436 · 2020-10-27 · ·

A joined body 10 is manufactured by joining a Mo- or Ti-made terminal 14 having a Ni coating, a Au coating, a NiAu coating (with Ni Serving as a base) to a recess 12a formed in a plate-shaped ceramic member 12 made of alumina or aluminum nitride through a joint layer 16. The joint layer 16 contains Au, Sn, Ag, Cu, and Ti and is in contact with a bottom surface of the recess 12a and with at least part of a side surface of the recess 12a (the entire side surface in this case). In the joint layer 16, its joint interface with the ceramic member 12 is Ti-rich. When the joined body 10 is cut in its thickness direction, the ratio of the total cross sectional area of pores to the cross-sectional area of the joint layer 16 (porosity) is 0.1 to 15%.

Ceramic structural body
12145891 · 2024-11-19 · ·

A ceramic structural body includes a substrate that is composed of a ceramic(s), a hole that is opened on a surface of the substrate, and a seal material that is positioned at an opening portion of the hole.

Solder material, method for producing a solder material of this type and use of a solder material of this type in order to connect a metal layer to a ceramic layer

A solder material (30) for bonding a metal layer (20) to a ceramic layer (10), in particular for forming a metal-ceramic substrate as a carrier for electrical components, comprising: a base material and an active metal, wherein the solder material (30) is a foil comprising the base material in a first layer (31) and the active metal in a second layer (32), and wherein the foil has a total thickness (GD) which is less than 50 m, preferably less than 25 m and particularly preferably less than 15 m.

SUPERCONDUCTING WIRE ROD CONNECTION STRUCTURE AND CONNECTION METHOD, AND SUPERCONDUCTING WIRE ROD

A superconducting wire rod connection structure can comprise first and second superconducting wire rods, wherein the first and second superconducting wire rods are formed by layering a base material, an intermediate layer, and a superconducting conductor layer. The base materials of the first and second superconducting wire rods can be joined to each other, and the superconducting conductor layers of the first and second superconducting wire rods can be connected by a connection wire rod including a superconducting conductor layer. Further, the superconducting wire rod connection structure can comprise a separating portion in which connection ends of the first and second superconducting wire rods with the base materials joined to each other are separated from the connection wire rod.

JOINED BODY INCLUDING CERAMIC MEMBER AND METALLIC MEMBER AND METHOD FOR MANUFACTURING JOINED BODY
20170036961 · 2017-02-09 · ·

A joined body 10 is manufactured by joining a Mo- or Ti-made terminal 14 having a Ni coating, a Au coating, a NiAu coating (with Ni Serving as a base) to a recess 12a formed in a plate-shaped ceramic member 12 made of alumina or aluminum nitride through a joint layer 16. The joint layer 16 contains Au, Sn, Ag, Cu, and Ti and is in contact with a bottom surface of the recess 12a and with at least part of a side surface of the recess 12a (the entire side surface in this case). In the joint layer 16, its joint interface with the ceramic member 12 is Ti-rich. When the joined body 10 is cut in its thickness direction, the ratio of the total cross sectional area of pores to the cross-sectional area of the joint layer 16 (porosity) is 0.1 to 15%.