Provided is a structure including a first member (2); a second member (3) disposed opposite to the first member (2); and a glass layer (4) disposed between the first member (2) and the second member (3) so as to bond the first member (2) and the second member (3). A glass transition point of the glass layer (4) is lower than a temperature of the glass layer (4) under operation. In the glass layer (4), at least either of ceramic and metallic particles 4b, 4c is dispersed. In a temperature region lower than the glass transition point of the glass layer (4), a thermal expansion coefficient thereof falls in between thermal expansion coefficients of the first member (2) and the second member (3). This allows thermal strain caused within the structure (1) to be reduced when the structure (1) is operated at a higher temperature than a room temperature.

A silicon nitride substrate includes silicon nitride and magnesium, in which when a surface of the silicon nitride substrate is analyzed with an X-ray fluorescence spectrometer under the specific Condition I, XB/XA is 0.8 or more and 1.0 or less.

A gas plug of the present disclosure is composed of a columnar porous composite in which a plurality of silicon compound phases containing silicon carbide as a main component are connected to each other via a silicon phase having silicon as a main component. The porous composite is housed inside a tubular body made from a dense ceramic.

A joint body of the present disclosure includes a substrate including a base member having insulating properties and a metal layer positioned on a first main surface of the base member, a metal joint layer, and a metal member. The metal joint layer is positioned between the metal layer and the metal member of the substrate. The metal joint layer includes a nickel layer, a solder layer, and a composite layer containing a mix of nickel and solder. The nickel layer, the composite layer, and the solder layer are positioned in this order from the metal layer side to the metal member side. The nickel in the composite layer extends from the nickel layer in the thickness direction and forms protrusions and recesses.

Provided is a method for manufacturing a circuit board including: (a) preparing a mixture of a metal powder, an anti-sintering agent, and an activator; (b) immersing a dielectric substrate in the mixture; (c) forming a metal-containing layer on the surface of the dielectric substrate by heating the mixture under an inert atmosphere or under a reducing atmosphere; (d) forming a first metal layer on the metal-containing layer by electroless plating and forming a second metal layer thereon by electroplating; and (e) forming a metal pattern on the dielectric substrate, wherein the first metal layer includes Cu, Ni, Co, Au, Pd, or an alloy thereof, the second metal layer includes Cu, Ni, Fe, Co, Cr, Zn, Au, Ag, Pt, Pd, Rh, or an alloy thereof, and the method further includes performing heat treatment at least once after step (c).

Provided is a method for manufacturing a circuit board including: (a) preparing a mixture of a metal powder, an anti-sintering agent, and an activator; (b) immersing a dielectric substrate in the mixture; (c) forming a metal-containing layer on the surface of the dielectric substrate by heating the mixture under an inert atmosphere or under a reducing atmosphere; (d) forming a first metal layer on the metal-containing layer by electroless plating and forming a second metal layer thereon by electroplating; and (e) forming a metal pattern on the dielectric substrate, wherein the first metal layer includes Cu, Ni, Co, Au, Pd, or an alloy thereof, the second metal layer includes Cu, Ni, Fe, Co, Cr, Zn, Au, Ag, Pt, Pd, Rh, or an alloy thereof, and the method further includes performing heat treatment at least once after step (c).

In some examples, techniques of repairing and/or reinforcing oxide-oxide ceramic matrix composite (CMC) materials using a metallic material. In one example, a method including applying a metallic material at an edge of an oxide-oxide CMC substrate; and heating the metallic material to diffuse the metal material into the oxide-oxide CMC substrate at the edge. In another example, a method including applying a metallic material onto a damaged area of the oxide-oxide CMC; applying a reinforcing phase material onto the damaged area of the oxide-oxide CMC; and heating the metallic material to diffuse the metallic material into the oxide-oxide CMC and attach the reinforcing phase material to the damaged area of the oxide-oxide CMC.

A seal system includes a ceramic component that has a non-core-gaspath surface region that defines a first surface roughness and a core gaspath surface region. A metallic component is situated adjacent the non-core-gaspath surface region. A coating system is disposed on the ceramic component. The coating system includes a silicon-containing layer on the non-core-gaspath surface region and a barrier layer that has a first section on the silicon-containing layer and a second section on the core-gaspath region and that is connected to the first section. The surface of the barrier layer has a second surface roughness that is less than the first surface roughness. The first section is in contact with the metallic component and the second section serves as an environmental barrier on the core-gaspath region.

Provided herein are energy storage devices. In some cases, the energy storage devices are capable of being transported on a vehicle and storing a large amount of energy. An energy storage device is provided comprising at least one liquid metal electrode, an energy storage capacity of at least about 1 MWh and a response time less than or equal to about 100 milliseconds (ms).

A seal system includes a ceramic component, a metallic component, a coating system. The ceramic component has a first surface region that defines a first surface roughness. The metallic component is situated adjacent to the first surface region and has a second surface region facing the first surface region. The coating system includes a silicon-containing layer on the surface region of the ceramic component and barrier layer on the silicon-containing layer. The silicon containing layer has a surface in contact with the barrier layer and the barrier layer has a surface in contact with the metallic component. The surface of the barrier layer has a second surface roughness that is less than the first surface roughness. The barrier layer serves to limit interaction between silicon of the silicon-containing layer and elements of the metallic component. The barrier layer includes at least one of mullite, zircon, or hafnon.