Provided is a member for a power storage device that, even when the amount of electrode active material supported is increased, enables charge and discharge and thus achieves a high capacity. A member 6 for a power storage device includes: a solid electrolyte layer 1; and an electrode layer 2 provided on the solid electrolyte layer 1 and made of a sintered body of an electrode material layer 2A containing an electrode active material precursor powder having an average particle diameter of not less than 0.01 μm and less than 0.7 μm.

Disclosed herein are power electronic modules formed by directly bonding a heat sink to a dielectric substrate using transition liquid phase bonding.

A multi-layer ceramic capacitor includes: a first region including a polycrystal including, as a main component, crystal grains free from intragranular pores; a second region that includes a polycrystal including, as a main component, crystal grains including intragranular pores and includes a higher content of silicon than a content of silicon in the first region; a capacitance forming unit including ceramic layers laminated along a first direction, and internal electrodes disposed between the ceramic layers; and a protective portion including a cover that covers the capacitance forming unit and constitutes a main surface facing in the first direction, a side margin constituting a side surface facing in a second direction orthogonal to the first direction, and a ridge constituting a connection portion, the connection portion connecting the main surface and the side surface to each other. The ceramic layers include the first region. The ridge includes the second region.

A ceramic electronic device includes a multilayer structure in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked, a main component of the plurality of dielectric layers being a ceramic having a perovskite structure expressed by a general formula ABO.sub.3. At least one of crystal grains of the plurality of dielectric layers has a core-shell structure. A dispersion of atomic displacement amounts between B site atoms and oxygen atoms of a shell of the core-shell structure is larger than a dispersion of atomic displacement amounts between B site atoms and oxygen atoms of a core of the core-shell structure.

In a silicon nitride substrate including a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, a plate thickness of the silicon nitride substrate is 0.4 mm or les, and a percentage of a number of the silicon nitride crystal grains including dislocation defect portions inside the silicon nitride crystal grains in a 50 μm×50 μm observation region of any cross section or surface of the silicon nitride sintered body is not less than 0% and not more than 20%. Etching resistance can be increased when forming the circuit board.

The present invention relates to a method for manufacturing a silicon nitride substrate and, more specifically, comprises the steps of: forming a slurry by mixing silicon nitride powder, a ceramic additive, and a solvent; molding the slurry to form sheets; sandwiching at least one of the sheets between a lower plate and an upper plate to form a stacked structure; degreasing the stacked structure; and sintering the stacked structure. At least one of the lower plate and the upper plate comprises a plurality of protrusions provided on one surface thereof, and the protrusions extend in parallel to each other in one direction.

This copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of aluminum-containing ceramics, the copper member and the ceramic member are bonded to each other, in which, at a bonded interface between the copper member and the ceramic member, an active metal compound layer containing an active metal compound that is a compound of one or more active metals selected from Ti, Zr, Nb, and Hf is formed on a ceramic member side, and in the active metal compound layer Al and Cu are present at a grain boundary of the active metal compound.

In a multilayer ceramic capacitor, an intersection of an interface is defined by a second dielectric ceramic layer, a first internal electrode layer or a second internal electrode layer, and a third dielectric ceramic layer, on a plane including a length direction and a width direction, the second dielectric ceramic layer and the third dielectric ceramic layer include a near intersection region at or near the intersection, and an average particle size of dielectric particles in the near intersection region is smaller than average particle sizes of dielectric particles in the first dielectric ceramic layer, the second dielectric ceramic layer, and the third dielectric ceramic layer.

The invention relates to a binder, which contains water glass and further a phosphate or a borate or both. The invention further relates to a method for constructing molds and cores layer by layer, the molds and cores comprising a construction material mixture, which at least comprises a refractory molding base material, and the binder. In order to produce the molds and cores layer by layer in 3-D printing, the refractory molding base material is applied layer by layer and is selectively printed with the binder layer by layer, and consequently a body corresponding to the molds or cores is constructed and the molds or cores are released after the unbonded construction material mixture has been removed.

There is provided a group III nitride laminate, including: a substrate comprised of silicon carbide; a first layer comprised of aluminum nitride and formed on the substrate; a second layer comprised of gallium nitride and formed on the first layer; and a third layer formed on the second layer and comprised of group III nitride having an electron affinity lower than that of the gallium nitride which is comprised in the second layer, the second layer having a thickness of less than 500 nm, the second layer containing iron at a concentration of less than 1×10.sup.17/cm.sup.3, and the second layer containing carbon at a concentration of less than 1×10.sup.17/cm.sup.3.