Provided is a bonded substrate mainly for mounting a power semiconductor in which the reliability to a thermal cycle has been enhanced as compared with a conventional one. In a bonded substrate in which a copper plate is bonded to one or both main surface(s) of a nitride ceramic substrate, a bonding layer consisting of TiN intervenes between the nitride ceramic substrate and the copper plate and is adjacent at least to the copper plate, and an Ag distribution region in which Ag atoms are distributed is set to be present in the copper plate. Preferably, an Ag-rich phase is set to be present discretely at an interface between the bonding layer and the copper plate.

An aluminum alloy member is made of an aluminum alloy having a Mg concentration set in a range of 0.4 mass % or more and 7.0 mass % or less and a Si concentration set to less than 1 mass %, the aluminum alloy member and a copper member are bonded to each other through solid-phase diffusion, and a compound layer made up of a first intermetallic compound layer that is disposed on the aluminum alloy member side and made of a phase of an intermetallic compound of Cu and Al, a second intermetallic compound layer that is disposed on the copper member side and made of a .sub.2 phase of an intermetallic compound of Cu and Al, and a CuAlMg layer provided between the first intermetallic compound layer and the second intermetallic compound layer is provided in a bonding interface between the aluminum alloy member and the copper member.

A wavelength conversion member complex includes a wavelength conversion member, a joining material, and a heat dissipation member. The wavelength conversion member includes a support and a phosphor member. The support defines a through-hole extending from an upper surface to a lower surface. The support has a concave portion on the lower surface around the through-hole. The concave portion is spaced apart from the through-hole. The phosphor member is disposed in the through-hole and includes a phosphor. The lower surface of the phosphor member is continuous with the lower surface of the support. The joining material is disposed in the concave portion, and has a lower surface that is flush with the lower surface of the support. The heat dissipation member is disposed under the joining material and the phosphor member, and has an upper surface in contact with the lower surface of the joining material.

A conductive honeycomb structure, comprising: a columnar ceramic honeycomb structure portion comprising an outer peripheral side wall and partition walls each disposed inside the outer peripheral side wall and defining a plurality of cells penetrating from one bottom surface to another bottom surface to form flow paths; a pair of electrode layers disposed on an outer surface of the outer peripheral side wall across a central axis of the honeycomb structure portion; and a pair of metal terminals joined to the respective electrode layers via one or more welded portions, wherein each of the one or more welded portions comprises a welded area of from 2 to 50 mm.sup.2.

A method of forming one or more high temperature co-fired ceramic articles, comprising the steps of:

a) forming a plurality of green compacts, by a process comprising dry pressing a powder comprising ceramic and organic binder to form a green compact;
b) disposing a conductor or conductor precursor to at least one surface of at least one of the plurality of green compacts to form at least one patterned green compact;
c) assembling the at least one patterned green compact with one or more of the plurality of green compacts or patterned green compacts or both to form a laminated assembly;
d) isostatically pressing the laminated assembly to form a pressed laminated assembly;
e) firing the pressed laminated assembly at a temperature sufficient to sinter the ceramic layers together.

A composite plate having a thickness of no more than 2 mm, and having laminated therein a zirconia sintered body, an adhesive layer, and a base material, the elasticity of the base material being no more than 100 GPa, and the apparent density of the composite plate being no more than 4.3 g/cm.sup.3.

According to one embodiment, a method for manufacturing a ceramic circuit board is disclosed. The ceramic circuit board includes a copper plate bonded to at least one surface of a ceramic substrate via a brazing material layer including Ag, Cu, and a reactive metal. The method includes: preparing a ceramic circuit board in which a copper plate is bonded on a ceramic substrate via a brazing material layer, and a portion of the brazing material layer is exposed between a pattern shape of the copper plate; a first chemical polishing process of chemically polishing the portion of the brazing material layer; and a first brazing material etching process of etching the chemically polished portion of the brazing material layer by using an etchant having a pH of 6 or less and including one type or two types selected from hydrogen peroxide and ammonium peroxodisulfate.

Provided is a method for manufacturing a metal-layer-joined ceramic base material board, in which at least one scribe line is formed, on each of the front and back surfaces of a ceramic base material board, along dividing lines for dividing the ceramic base material board into a plurality of ceramic boards, a metal board covering at least a portion of the dividing lines is joined to each of the front and back surface of the ceramic base material board, the metal boards are etched along the dividing lines to form a plurality of metal layers, and the plurality of metal layers are joined to each of the front and back surfaces of the ceramic base material board.

A method for producing a ceramic-aluminum bonded body obtained by bonding a ceramic member and an aluminum member, the aluminum member before bonding being composed of aluminum having a purity of 99.0 mass % or higher and 99.9 mass % or lower, includes a heat treatment step of subjecting the aluminum member to a heat treatment in a range of 400 C. or higher and lower than a solidus temperature, and a bonding step of bonding the aluminum member after the heat treatment step and the ceramic member via a brazing filler material including Si.

A wavelength conversion member complex includes a wavelength conversion member, a joining material, and a heat dissipation member. The wavelength conversion member includes a support and a phosphor member. The support defines a through-hole extending from an upper surface to a lower surface. The support has a concave portion on the lower surface around the through-hole. The concave portion is spaced apart from the through-hole. The phosphor member is disposed in the through-hole and includes a phosphor. The lower surface of the phosphor member is continuous with the lower surface of the support. The joining material is disposed in the concave portion, and has a lower surface that is flush with the lower surface of the support. The heat dissipation member is disposed under the joining material and the phosphor member, and has an upper surface in contact with the lower surface of the joining material.