Patent classifications
C04B2237/708
BONDED BODY, INSULATED CIRCUIT BOARD WITH HEAT SINK, AND HEAT SINK
An aluminum alloy member is made of an aluminum alloy having a Mg concentration set in a range of 0.4 mass % or more and 7.0 mass % or less and a Si concentration set to less than 1 mass %, the aluminum alloy member and a copper member are bonded to each other through solid-phase diffusion, and a compound layer made up of a first intermetallic compound layer that is disposed on the aluminum alloy member side and made of a phase of an intermetallic compound of Cu and Al, a second intermetallic compound layer that is disposed on the copper member side and made of a .sub.2 phase of an intermetallic compound of Cu and Al, and a CuAlMg layer provided between the first intermetallic compound layer and the second intermetallic compound layer is provided in a bonding interface between the aluminum alloy member and the copper member.
Conductive honeycomb structure
A conductive honeycomb structure, comprising: a columnar ceramic honeycomb structure portion comprising an outer peripheral side wall and partition walls each disposed inside the outer peripheral side wall and defining a plurality of cells penetrating from one bottom surface to another bottom surface to form flow paths; a pair of electrode layers disposed on an outer surface of the outer peripheral side wall across a central axis of the honeycomb structure portion; and a pair of metal terminals joined to the respective electrode layers via one or more welded portions, wherein each of the one or more welded portions comprises a welded area of from 2 to 50 mm.sup.2.
Low Temperature Direct Bonding Of Aluminum Nitride To AlSiC Substrates
Disclosed herein are power electronic modules formed by directly bonding a heat sink to a dielectric substrate using transition liquid phase bonding.
Process and Formulation to Join Ceramic Forms While Maintaining Structural and Physical Characteristics Across The Bond Surface
A ceramic bonding material including at least one fibrous material, a flux agent and a thickening agent wherein the ceramic bonding material fired at a set temperature to bond the two adjacent substrate faces.
Process and formulation to join ceramic forms while maintaining structural and physical characteristics across the bond surface
A ceramic bonding material including at least one fibrous material, a flux agent and a thickening agent wherein the ceramic bonding material fired at a set temperature to bond the two adjacent substrate faces.
Semiconductor Substrate Support With Multiple Electrodes And Method For Making Same
A method for manufacturing an electrostatic chuck with multiple chucking electrodes made of ceramic pieces using metallic aluminum as the joining. The aluminum may be placed between two pieces and the assembly may be heated in the range of 770C to 1200C. The joining atmosphere may be non-oxygenated. After joining the exclusions in the electrode pattern may be machined by also machining through one of the plate layers. The machined exclusion slots may then be filled with epoxy or other material. An electrostatic chuck or other structure manufactured according to such methods.
Composite plate and production method therefor
A composite plate having a thickness of no more than 2 mm, and having laminated therein a zirconia sintered body, an adhesive layer, and a base material, the elasticity of the base material being no more than 100 GPa, and the apparent density of the composite plate being no more than 4.3 g/cm.sup.3.
Plugged honeycomb structure and plugged honeycomb segment
A plugged honeycomb structure includes: a plurality of honeycomb segments, a bonding layer, and a plugging portions to plug open ends of cells of each of the honeycomb segments. The honeycomb segment is configured so that the cells having at least two kinds of different shapes are disposed in a cross section orthogonal to an extension direction of the cells, the honeycomb segment has a center region and an circumferential region located in the circumference of the center region, the center region has a cell arrangement pattern such that inflow cells surround one outflow cell, in the inflow end face of the honeycomb segment, the circumferential region has an open frontal area that is smaller than an open frontal area of the center region, the segment circumferential wall of the honeycomb segment and the bonding layer have a special thickness.
METHOD FOR MANUFACTURING CERAMIC CIRCUIT BOARD
According to one embodiment, a method for manufacturing a ceramic circuit board is disclosed. The ceramic circuit board includes a copper plate bonded to at least one surface of a ceramic substrate via a brazing material layer including Ag, Cu, and a reactive metal. The method includes: preparing a ceramic circuit board in which a copper plate is bonded on a ceramic substrate via a brazing material layer, and a portion of the brazing material layer is exposed between a pattern shape of the copper plate; a first chemical polishing process of chemically polishing the portion of the brazing material layer; and a first brazing material etching process of etching the chemically polished portion of the brazing material layer by using an etchant having a pH of 6 or less and including one type or two types selected from hydrogen peroxide and ammonium peroxodisulfate.
PACKAGING STRUCTURE FOR POWER MODULE
The present application discloses a packaging structure for a power module, comprising: a heat dissipation substrate; at least one first power device disposed on a first substrate having an insulating layer, the first substrate disposed on the heat dissipating substrate; and at least one second power device including a jumping electrode having a jumping potential, wherein the at least one second power device is disposed on at least one second substrate having an insulating layer, and the at least one second substrate is disposed on the first substrate, to reduce a parasitic capacitance between the jumping electrode and the heat dissipation substrate. The packaging structure for the power module according to the present application can reduce the parasitic capacitance between the jumping electrode of the power module and the heat dissipation substrate, thereby greatly reducing the EMI noise of the power module in operation.