A method for manufacturing a metal-ceramic substrate (1) includes providing a ceramic layer (10), a metal layer (20) and a solder layer (30) coating the ceramic layer (10) and/or the metal layer (20) and/or the solder layer (30) with an active metal layer (40), arranging the solder layer (30) between the ceramic layer (10) and the metal layer (20) along a stacking direction (S), forming a solder system (35) comprising the solder layer and the active metal layer (40), wherein a solder material of the solder layer (30) is free of a melting point lowering material and bonding the metal layer (20) to the ceramic layer (10) via the solder system (35) by means of an active solder process.

A solder material (30) for bonding a metal layer (20) to a ceramic layer (10), in particular for forming a metal-ceramic substrate as a carrier for electrical components, comprising: a base material and an active metal, wherein the solder material (30) is a foil comprising the base material in a first layer (31) and the active metal in a second layer (32), and wherein the foil has a total thickness (GD) which is less than 50 μm, preferably less than 25 μm and particularly preferably less than 15 μm.

Provided are a brazing material in paste form containing a powder mixture that contains titanium powder having an average particle diameter (D50) of 20 μm or less in an amount of 0.7 to 2.0 mass %, copper powder in an amount of 3 to 15 mass %, and silver powder as the remaining portion, and a vehicle, and techniques associated with the brazing material.

The invention relates to a process for producing a metal-ceramic substrate (1), comprising: providing a ceramic element (10) and a metal layer, providing a gas-tight container (25) that encloses the ceramic element (10), the container (25) preferably being formed from the metal layer or comprising the metal layer, forming the metal-ceramic substrate (1) by connecting the metal layer to the ceramic element (10) by means of hot isostatic pressing, wherein, for the purpose of forming the metal-ceramic substrate (1), an active metal layer (15) or a contact layer comprising an active metal is arranged at least in some sections between the metal layer and the ceramic element (10) for supporting the connection of the metal layer to the ceramic element (10).

The present invention relates to a glass including, represented by mole percent based on oxides: from 52% to 80% of SiO.sub.2; from 5% to 30% of B.sub.2O.sub.3; from 2% to 30% of Al.sub.2O.sub.3; from 0.1% to 11% of P.sub.2O.sub.5; and from 0.0001% to 5% of Na.sub.2O, in which the glass has an average thermal expansion coefficient α at from 50° C. to 350° C. of from 5×10.sup.−7/° C. or more and 33×10.sup.−7/° C. or less.

A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The ceramic pieces may be aluminum nitride or other ceramics, and the pieces may be brazed with Nickel and an alloying element, under controlled atmosphere. The completed joint will be fully or substantially Nickel with another element in solution. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the interior of a heater or electrostatic chuck. Semiconductor processing equipment comprising ceramic and joined with a nickel alloy and adapted to withstand processing chemistries, such as fluorine chemistries, as well as high temperatures.

A ceramic structure includes a base body, and a thermoelectric device having a part in directly contact with the base body. The base body is a ceramic consisting of aluminum oxide. The thermoelectric device comprises a conductor part that is a sintered body having an alloy of tungsten and rhenium, as a main component, and including nickel oxide, aluminum oxide and silicon dioxide.

A bonded body according to an embodiment comprises a ceramic substrate, a copper plate, and a bonding layer provided on at least one surface of the ceramic substrate and bonding the ceramic substrate and the copper plate, in which the bonding layer contains Ag, Cu, Ti, and a first element being one or two selected from Sn and In, a Ti alloy of Ti and at least one selected from Ag, Cu, Sn, and In existing at a bonding boundary between the copper plate and the bonding layer, and the Ti alloy existing over not less than 30% per a length of 30 μm at the bonding boundary.

An example article may include a component, a substrate including a first ceramic, a joining layer between the component and the substrate, and a joint surface coating between the substrate and the joining layer. The joint surface coating may include a diffusion barrier layer including a second ceramic material, and a compliance layer including at least one of a metal or a metalloid. An example technique may include holding a first joining surface of a coated component adjacent a second joining surface of a second component. The example technique may further include heating at least one of the coated component, the second component, and a braze material, and brazing the coated component by allowing the braze material to flow in a region between the first joining surface and the second joining surface.

A bonded assembly according to the present embodiment, includes a metal plate and a ceramic substrate bonded to each other through a bonding layer containing Ag. In the bonded assembly, in a measurement region that is formed in a cross section formed by a thickness direction of the bonding layer and an orthogonal direction thereto, and that has a size of a length in the thickness direction of the bonding layer×a length of 200 μm in the orthogonal direction, a Ag-rich region having a Ag concentration of 60 at % or more has an area ratio of 70% or less to a Ag-poor region having a Ag concentration of 50 at % or less.