A ceramic circuit substrate having a metal plate bonded, by a bonding braze material, to at least one main surface of a ceramic substrate, wherein the bonding braze material contains, as metal components, 0.5 to 4.0 parts by mass of at least one active metal selected from among titanium, zirconium, hafnium, and niobium, with respect to 100 parts by mass, in total, of 93.0 to 99.4 parts by mass of Ag, 0.1 to 5.0 parts by mass of Cu, and 0.5 to 2.0 parts by mass of Sn; and Cu-rich phases in a bonding braze material layer structure between the ceramic substrate and the metal plate have an average size of 3.5 μm or less and a number density of 0.015/μm2 or higher. A method for producing a ceramic circuit substrate includes bonding at a temperature of 855 to 900° C. for a retention time of 10 to 60 minutes.

A bonded substrate includes: a silicon nitride ceramic substrate; a copper plate; and a bonding layer bonding the copper plate to the silicon nitride ceramic substrate, wherein the bonding layer has a first interface in contact with the silicon nitride ceramic substrate and a second interface in contact with the copper plate, and contains a nitride and a silicide of an active metal as at least one metal selected from the group consisting of titanium and zirconium, an atomic fraction of nitrogen of the bonding layer is greatest at the first interface and is smallest at the second interface, and a sum of atomic fractions of the active metal and silicon of the bonding layer is smallest at the first interface and is greatest at the second interface.

A corrosion-resistant component configured for use with a semiconductor processing reactor, the corrosion-resistant component comprising: a) a ceramic insulating substrate; and, b) a white corrosion-resistant non-porous outer layer associated with the ceramic insulating substrate, the white corrosion-resistant non-porous outer layer having a thickness of at least 50 μm, a porosity of at most 1%, and a composition comprising at least 15% by weight of a rare earth compound based on total weight of the corrosion-resistant non-porous layer; and, c) an L* value of at least 90 as measured on a planar surface of the white corrosion-resistant non-porous outer layer. Methods of making are also disclosed.

A ceramic structure includes a base body, and a thermoelectric device having a part in directly contact with the base body. The base body is a ceramic consisting of aluminum oxide. The thermoelectric device comprises a conductor part that is a sintered body having an alloy of tungsten and rhenium, as a main component, and including nickel oxide, aluminum oxide and silicon dioxide.

A method for producing a gas-tight metal-ceramic join is disclosed. In an embodiment a method includes providing at least one ceramic main body having a first end face and a second end face, applying a metallization to at least a partial region of the end faces of the main body, applying a nickel layer to the metallized partial region of the end faces, applying a brazing paste to the metallized partial region of the first end face and/or the second end face of the main body, drying the brazing paste, and firing the brazing paste.

Adhesive compositions and methods for bonding materials with different thermal expansion coefficients is provided. The adhesive is formulated using a flux material, a low flux material, and a filler material, where the filler material comprises particulate from at least one of the two components being bonded together. A thickening agent can also be used as part of the adhesive composition to aid in applying the adhesive and establishing a desired bond thickness. The method of forming a high strength bond using the disclosed adhesive does not require the use of intermediary layer or the use of high cure temperatures that could damage one or both of the components being bonded together.

According to one embodiment, a method for manufacturing a ceramic circuit board is disclosed. The ceramic circuit board includes a copper plate bonded to at least one surface of a ceramic substrate via a brazing material layer including Ag, Cu, and a reactive metal. The method includes: preparing a ceramic circuit board in which a copper plate is bonded on a ceramic substrate via a brazing material layer, and a portion of the brazing material layer is exposed between a pattern shape of the copper plate; a first chemical polishing process of chemically polishing the portion of the brazing material layer; and a first brazing material etching process of etching the chemically polished portion of the brazing material layer by using an etchant having a pH of 6 or less and including one type or two types selected from hydrogen peroxide and ammonium peroxodisulfate.

A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The wetting and flow of the joining material is controlled by the selection of the joining material, the joining temperature, the joining atmosphere, and other factors. The ceramic pieces may be on a non-diffusable type, such as aluminum nitride, alumina, beryllium oxide, and zirconia, and the pieces may be brazed with an aluminum alloy under controlled atmosphere. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck.

A cover lid for use with a semiconductor package is disclosed. First, a polyamide mask is applied to one surface of the lid plate. Next, the exposed areas of the surface, as well as the sides of the lid plate, are metallized. The polyamide mask can then be removed. This reduces pullback and shrinkage of the metallized layer, while lowering the manufacturing cost and process times.

An aluminum alloy member is made of an aluminum alloy having a Mg concentration set in a range of 0.4 mass % or more and 7.0 mass % or less and a Si concentration set to less than 1 mass %, the aluminum alloy member and a copper member are bonded to each other through solid-phase diffusion, and a compound layer made up of a first intermetallic compound layer that is disposed on the aluminum alloy member side and made of a θ phase of an intermetallic compound of Cu and Al, a second intermetallic compound layer that is disposed on the copper member side and made of a γ.sub.2 phase of an intermetallic compound of Cu and Al, and a Cu—Al—Mg layer provided between the first intermetallic compound layer and the second intermetallic compound layer is provided in a bonding interface between the aluminum alloy member and the copper member.