Patent classifications
C07C15/58
Composition for film formation, resist underlayer film and forming method thereof, pattern-forming method and compound
A composition for film formation includes a compound represented by formula (1) and a solvent. In the formula (1), R.sup.1, R.sup.2 and R.sup.3 each independently represent a group represented by the formula (a). In the formula (a), R.sup.A represents a hydrogen atom, an aryl group, or an alkyl group unsubstituted or substituted with at least one of a hydroxy group and an aryl group. R.sup.B represents a single bond or an arylene group. A part or all of hydrogen atoms on an aromatic ring of the aryl group and the arylene group may be substituted with a halogen atom, a hydroxy group, an amino group, a sulfanyl group, or a monovalent organic group having 1 to 20 carbon atoms and not including an aromatic ring. ##STR00001##
Composition for film formation, resist underlayer film and forming method thereof, pattern-forming method and compound
A composition for film formation includes a compound represented by formula (1) and a solvent. In the formula (1), R.sup.1, R.sup.2 and R.sup.3 each independently represent a group represented by the formula (a). In the formula (a), R.sup.A represents a hydrogen atom, an aryl group, or an alkyl group unsubstituted or substituted with at least one of a hydroxy group and an aryl group. R.sup.B represents a single bond or an arylene group. A part or all of hydrogen atoms on an aromatic ring of the aryl group and the arylene group may be substituted with a halogen atom, a hydroxy group, an amino group, a sulfanyl group, or a monovalent organic group having 1 to 20 carbon atoms and not including an aromatic ring. ##STR00001##