Patent classifications
C07C211/55
Compounds and methods targeting GPER in calcium disorders
The present disclosure provides compositions and method targeting GPER for the treatment of cancers, such as breast cancers and leukemias, gallstone disease, and for conferring of neuroprotection on a subject. Also disclosed are high throughput assays for identifying antagonists of GPER.
P-DIPHENYL COMPOUND DERIVATIVE MIXTURE AND METHOD OF PRODUCING THE SAME
A mixture containing p-diphenyl compound derivatives represented by the following general formula (1), general formula (2), and general formula (3).
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P-DIPHENYL COMPOUND DERIVATIVE MIXTURE AND METHOD OF PRODUCING THE SAME
A mixture containing p-diphenyl compound derivatives represented by the following general formula (1), general formula (2), and general formula (3).
##STR00001##
MATERIALS FOR ELECTRONIC DEVICES
The present application relates to an amine compound, which is suitable for use in electronic devices, in particular organic electroluminescent devices (OLEDs). Furthermore, it relates to electronic devices comprising the compound, in particular OLEDs. Furthermore, it relates to a method for synthesizing the above-mentioned amine compound.
NOVEL SMALL MOLECULE INHIBITORS OF TEAD TRANSCRIPTION FACTORS
The present disclosure compounds, as well as their compositions and methods of use. The compounds inhibit the activity of the TEAD transcription factor, and are useful in the treatment of diseases related to the activity of TEAD transcription factor including, e.g., cancer and other diseases.
NOVEL SMALL MOLECULE INHIBITORS OF TEAD TRANSCRIPTION FACTORS
The present disclosure compounds, as well as their compositions and methods of use. The compounds inhibit the activity of the TEAD transcription factor, and are useful in the treatment of diseases related to the activity of TEAD transcription factor including, e.g., cancer and other diseases.
POLYMER COMPOUND, INTERMEDIATE COMPOSITION, NEGATIVE ELECTRODE, ELECTRICITY STORAGE DEVICE, SLURRY FOR NEGATIVE ELECTRODES, METHOD FOR PRODUCING POLYMER COMPOUND, AND METHOD FOR PRODUCING NEGATIVE ELECTRODE
A polymer compound, which is used as a binder for a negative electrode of an electricity storage device, is obtained by condensation of a vinyl polymer that contains a carboxyl group and a third compound that is selected from among an aromatic multifunctional amine, phosphorous acid, phosphorous acid ester, trialkoxysilane, and phosphoric acid.
POLYMER COMPOUND, INTERMEDIATE COMPOSITION, NEGATIVE ELECTRODE, ELECTRICITY STORAGE DEVICE, SLURRY FOR NEGATIVE ELECTRODES, METHOD FOR PRODUCING POLYMER COMPOUND, AND METHOD FOR PRODUCING NEGATIVE ELECTRODE
A polymer compound, which is used as a binder for a negative electrode of an electricity storage device, is obtained by condensation of a vinyl polymer that contains a carboxyl group and a third compound that is selected from among an aromatic multifunctional amine, phosphorous acid, phosphorous acid ester, trialkoxysilane, and phosphoric acid.
Polymerization Inhibitor for Silane
A polymerization inhibitor for a silane enables purification of the silane to a high degree because a polymer is not formed even when heating to distill the silane, even when a cyclic silane monomer is present. A high-purity cyclic silane composition is obtained, in particular high-purity cyclopentasilane, that can be polymerized and applied onto a substrate as a coating-type polysilane composition and fired to produce a good silicon thin film with high conductivity. The polymerization inhibitor includes a secondary or tertiary aromatic amine. The aromatic group is a phenyl group or a naphthyl group. The polymerization inhibitor is present in a proportion of 0.01 to 10 mol % per mole of the silane. In the polymerization inhibitor, a boiling point of the aromatic amine is 196° C. or higher.
Polymerization Inhibitor for Silane
A polymerization inhibitor for a silane enables purification of the silane to a high degree because a polymer is not formed even when heating to distill the silane, even when a cyclic silane monomer is present. A high-purity cyclic silane composition is obtained, in particular high-purity cyclopentasilane, that can be polymerized and applied onto a substrate as a coating-type polysilane composition and fired to produce a good silicon thin film with high conductivity. The polymerization inhibitor includes a secondary or tertiary aromatic amine. The aromatic group is a phenyl group or a naphthyl group. The polymerization inhibitor is present in a proportion of 0.01 to 10 mol % per mole of the silane. In the polymerization inhibitor, a boiling point of the aromatic amine is 196° C. or higher.