Atomic layer deposition (ALD) and chemical vapor deposition (CVD) precursors that are useful for forming metal-containing films are provided. These compounds include triazapentadienyl, -imino enolate compounds and -imino ketone compounds having formulae 1, 2, and 3, respectively. An ALD method using the precursors is also provided.

Atomic layer deposition (ALD) and chemical vapor deposition (CVD) precursors that are useful for forming metal-containing films are provided. These compounds include triazapentadienyl, -imino enolate compounds and -imino ketone compounds having formulae 1, 2, and 3, respectively. An ALD method using the precursors is also provided.

The alkoxide compound of the present invention is characteristically represented by the following general formula (I):

##STR00001##

The alkoxide compound of the present invention is characteristically represented by the following general formula (I):

##STR00001##

An alkoxide compound is represented by General Formula (I) below:

##STR00001##

wherein R.sup.1 to R.sup.3 each independently represent hydrogen, a C.sub.1-12 hydrocarbon group, etc.; R.sup.4 represents a C.sub.1-12 hydrocarbon group, etc.; L represents hydrogen, halogen, a hydroxyl group, an amino group, an azi group, a phosphido group, a nitrile group, a carbonyl group, a C.sub.1-12 hydrocarbon group, etc.; and M represents a metal atom or a silicon atom, n represents an integer of 1 or more, m represents an integer of 0 or more, and n+m represents the valence of the metal atom or silicon atom.

Methods of and systems for remediating hydrazine spills, solutions, and hydrazine-contaminated objects including areas thereof comprise reacting 1,1-Dimethylhydrazine with -ketoacids and adding a reducing agent to the reaction of 1,1-Dimethylhydrazine with said -ketoacids.

Methods of and systems for remediating hydrazine spills, solutions, and hydrazine-contaminated objects including areas thereof comprise reacting 1,1-Dimethylhydrazine with -ketoacids and adding a reducing agent to the reaction of 1,1-Dimethylhydrazine with said -ketoacids.

Methods of and systems for remediating hydrazine spills, solutions, and hydrazine-contaminated objects including areas thereof comprise reacting 1,1-Dimethylhydrazine with -ketoacids and adding a reducing agent to the reaction of 1,1-Dimethylhydrazine with said -ketoacids.

Provided are a new class of hydrazone amide derivatives and the use thereof in the preparation of anti-osteoporosis drugs, wherein the structural formula of the hydrazone amide derivative is as shown in formula (I), and same are a new class of compounds with an anti-osteoporosis effect. ##STR00001##

Provided are a new class of hydrazone amide derivatives and the use thereof in the preparation of anti-osteoporosis drugs, wherein the structural formula of the hydrazone amide derivative is as shown in formula (I), and same are a new class of compounds with an anti-osteoporosis effect. ##STR00001##