A process for preparing diaryl sulfones, such as 4,4-dichlorodiphenylsulfone is disclosed. The process comprises contacting an aryl compound with sulfur trioxide to provide a benzene sulfonic acid. The benzene sulfonic acid is coupled to additional aryl compound in the presence of a catalyst. During the coupling step, the additional aryl compound is continuously added while water is removed.

Provided are ionic thermal acid generators comprising an anion of an aromatic sulfonic acid comprising one or more fluorinated alcohol group and a cation. Also provided are photoresist pattern trimming compositions that include an ionic thermal acid generator, a matrix polymer and a solvent, and methods of trimming a photoresist pattern using the trimming compositions. The thermal acid generators, compositions and methods find particular applicability in the manufacture of semiconductor devices.

The present invention relates to a novel photoacid generator compound cation, comprising an element having for 92 eV photons (extreme ultraviolet (EUV)) an absorption cross section of at least 0.510.sup.7.Math.cm.sup.2/mol; having at least two stable oxidation states; and selected from the elements of group 1 to group 15 of the periodic table of the elements. Additionally, the present invention relates to a photoacid generator comprising said photoacid generator compound cation and an anion. Furthermore, the present invention aims to provide a photoresist composition comprising said photoacid generator and an acid labile polymer. Finally, the present invention relates to a method of generating an acid using the photoresist composition and a method of forming a patterned materials feature on a substrate.

The present invention relates to a novel photoacid generator compound cation, comprising an element having for 92 eV photons (extreme ultraviolet (EUV)) an absorption cross section of at least 0.510.sup.7.Math.cm.sup.2/mol; having at least two stable oxidation states; and selected from the elements of group 1 to group 15 of the periodic table of the elements. Additionally, the present invention relates to a photoacid generator comprising said photoacid generator compound cation and an anion. Furthermore, the present invention aims to provide a photoresist composition comprising said photoacid generator and an acid labile polymer. Finally, the present invention relates to a method of generating an acid using the photoresist composition and a method of forming a patterned materials feature on a substrate.

Photoresist pattern trimming compositions are provided. The compositions comprise: a matrix polymer, an aromatic sulfonic acid and a solvent, wherein the aromatic sulfonic acid comprises one or more fluorinated alcohol group. Also provided are methods of trimming a photoresist pattern using the trimming compositions. The compositions and methods find particular applicability in the manufacture of semiconductor devices.

Photoresist pattern trimming compositions are provided. The compositions comprise: a matrix polymer, an aromatic sulfonic acid and a solvent, wherein the aromatic sulfonic acid comprises one or more fluorinated alcohol group. Also provided are methods of trimming a photoresist pattern using the trimming compositions. The compositions and methods find particular applicability in the manufacture of semiconductor devices.

The present invention provides a titanium ligand-modified black phosphorus and the preparation method and use thereof. The titanium ligand-modified black phosphorus is a complex of black phosphorus and a titanium ligand having a structure represented by formula (I):

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wherein in the formula (I), R.sub.1 comprises C.sub.1-C.sub.6 alkyl, or phenyl optionally further substituted with 0 to 5 groups each independently selected from halogen atom, C.sub.1-C.sub.6 alkyl, nitro, hydroxy, amino or C.sub.1-C.sub.3 alkoxy; the C.sub.1-C.sub.6 alkyl or C.sub.1-C.sub.3 alkoxy is optionally further substituted with 0 to 3 groups each independently selected from halogen atom, nitro, hydroxy, amino, methyl, ethyl or n-propyl. The titanium ligand-modified black phosphorus of the present invention is not likely oxidized without changing inherent properties of the black phosphorus, and the antioxidant capacity is greatly enhanced.

Provided are ionic thermal acid generators comprising an anion of an aromatic sulfonic acid comprising one or more fluorinated alcohol group and a cation. Also provided are photoresist pattern trimming compositions that include an ionic thermal acid generator, a matrix polymer and a solvent, and methods of trimming a photoresist pattern using the trimming compositions. The thermal acid generators, compositions and methods find particular applicability in the manufacture of semiconductor devices.

Provided are a high-purity styrenesulfonic acid compound having a markedly decreased amount of bonded bromine and a polymer thereof, which are useful for modifiers for secondary batteries, dopants for conductive polymers, additives for semiconductor polishing and cleaning agents, organic EL elements, and photoresists, and particularly for members for electronic materials. A high-purity 4-(2-bromoethyl)benzenesulfonic acid having a decreased amount of nuclear-brominated forms, a high-purity styrenesulfonic acid compound having a markedly decreased amount of bonded bromine, which are derived from the high-purity 4-(2-bromoethyl)benzenesulfonic acid, and a polymer of the high-purity styrenesulfonic acid compound are used.

The present invention provides a radiation-sensitive resin composition that contains a polymer having a structural unit that includes an acid-labile group; and an acid generator, wherein the acid generator includes a compound including a sulfonate anion having SO.sub.3.sup., wherein a hydrogen atom or an electron-donating group bonds to an carbon atom with respect to SO.sub.3.sup., and an electron-withdrawing group bonds to a carbon atom with respect to SO.sub.3.sup.; and a radiation-degradable onium cation. The compound preferably has a group represented by the following formula (1-1) or (1-2). In the following formulae (1-1) and (1-2), R.sup.1 and R.sup.2 each independently represent a hydrogen atom or a monovalent electron-donating group. R.sup.3 represent a monovalent electron-withdrawing group. R.sup.4 represents a hydrogen atom or a monovalent hydrocarbon group.

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