The present invention provides a compound represented by formula (I) wherein symbols in the formula are as defined in the specification. ##STR00001##

Disclosed are sulfur-containing compounds for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The plasma etching compounds may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

Disclosed are sulfur-containing compounds for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The plasma etching compounds may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

A method of making CF3CH2SH, comprising a step of reacting CF3CH2X, wherein X is halide or tosylate, with MSH, where M is an alkali metal such as Na or K, to yield CF3CH2SH. More specifically, a method of making CF3CH2SH, a step of reacting CF3CH2CI with a molar excess of NaSH in a reaction medium of one or more polar organic solvents at a temperature of from about 70 C to about 110 C for a time of from about 1 to about 5 hours.

A method of making CF3CH2SH, comprising a step of reacting CF3CH2X, wherein X is halide or tosylate, with MSH, where M is an alkali metal such as Na or K, to yield CF3CH2SH. More specifically, a method of making CF3CH2SH, a step of reacting CF3CH2CI with a molar excess of NaSH in a reaction medium of one or more polar organic solvents at a temperature of from about 70 C to about 110 C for a time of from about 1 to about 5 hours.

Substituted vinyl- and alkynylcyanocycloalkanols and vinyl- and alkynylcyanoheterocyclylalkanols of the general formula (I) or salts thereof

##STR00001## where [XY], Q, R.sup.1, R.sup.2, A.sup.1, A.sup.2, V, W, m and n are each as defined in the description, processes for preparation thereof and the use thereof for enhancing stress tolerance in plants with respect to abiotic stress, and/or for increasing plant yield.

The invention relates to a method for synthesising a mercaptan from a terminal olefin and hydrogen sulphide which comprises the following consecutive steps: Acatalytic addition of hydrogen sulphide to a terminal olefin catalysed by an acid catalyst; Bseparation of the products of the addition reaction into a light fraction including the surplus hydrogen sulphide and the olefins, and into a heavy fraction including at least one mercaptan and optionally one or more thioethers; Ca finishing step of passing the light fraction obtained in step B over an acid catalyst; then Dseparation of the products of the finishing step into a fraction that is rich in hydrogen sulphide and into a fraction that is rich in additives; and finally Erecirculation of the fraction that is rich in hydrogen sulphide to the catalytic addition step A. The invention also relates to the facility for implementing said method.

The invention relates to a method for synthesising a mercaptan from a terminal olefin and hydrogen sulphide which comprises the following consecutive steps: Acatalytic addition of hydrogen sulphide to a terminal olefin catalysed by an acid catalyst; Bseparation of the products of the addition reaction into a light fraction including the surplus hydrogen sulphide and the olefins, and into a heavy fraction including at least one mercaptan and optionally one or more thioethers; Ca finishing step of passing the light fraction obtained in step B over an acid catalyst; then Dseparation of the products of the finishing step into a fraction that is rich in hydrogen sulphide and into a fraction that is rich in additives; and finally Erecirculation of the fraction that is rich in hydrogen sulphide to the catalytic addition step A. The invention also relates to the facility for implementing said method.

Disclosed herein is a method for manufacturing a patterned object and a light irradiation apparatus that make it possible to form a pattern that accurately follows a mask pattern with higher accuracy in a patterning process of irradiating a pattern forming substrate with vacuum ultra violet light. The light irradiation apparatus includes a mask stage arranged apart from the pattern forming substrate and configured to hold a mask on which a prescribed pattern is formed, and a vacuum ultra violet light source unit configured to irradiate the pattern forming substrate with vacuum ultra violet light through the mask. A space between the mask and the pattern forming substrate is set to be an atmosphere containing oxygen. The vacuum ultra violet light source unit irradiates light, as the vacuum ultra violet light, having a continuous spectrum in a range where a wavelength ranges from 180 nm to 200 nm.

The present disclosure relates generally to lipids, lipid nanoparticle formulations, and methods of using the same for delivering nucleic acids, such as mRNA.