C07F5/062

Aluminum compound, method of forming thin film by using the same, and method of fabricating integrated circuit device

An aluminum compound is represented by Chemical Formula (I) and is used as a source material for forming an aluminum-containing thin film.

Catalyst Systems Containing Low Valent Titanium-Aluminum Complexes and Polymers Produced Therefrom
20180291042 · 2018-10-11 ·

Disclosed herein are methods for synthesizing low valence, titanium-aluminum complexes from half-metallocene titanium compounds and alkylaluminum compounds. The titanium-aluminum complexes can be used as components in catalyst systems for the polymerization of olefins.

Organometallic chain transfer agents

Embodiments relate to organometallic compositions that are useful for chain transfer during olefin polymerization. Such compositions are chain transfer agents comprising an organoaluminum compound of the formula Al(CH.sub.2CH(Y.sup.2)A.sup.2).sub.3 and an organozinc compound of the formula Zn(CH.sub.2CH(Y.sup.2)A.sup.2).sub.2.

Curable compositions comprising unsaturated polyolefins

The present disclosure relates to unsaturated polyolefins and processes for preparing the same. The present disclosure further relates to curable formulations comprising the unsaturated polyolefins that show improved crosslinking.

Optoelectronic Component and Method for Producing an Optoelectronic Component
20180175260 · 2018-06-21 ·

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes at least one metallic surface, a contacted optoelectronic semiconductor chip configured to emit radiation and a protective layer arranged on the at least one metallic surface, wherein the protective layer comprises a protective material of at least one N-heterocyclic carbene, and wherein a covalent bond is formed between the protective material and the at least one metallic surface.

Deposition of metal films using beta-hydrogen free precursors

Methods of depositing a metal-containing film by exposing a substrate surface to a first precursor and a reactant, where one or more of the first precursor and the react comprises a compound having the general formula of one or more of M(XR.sub.3).sub.2, M(XR.sub.3).sub.3, M(XR.sub.3).sub.4, M(XR.sub.3).sub.5 and M(XR.sub.3).sub.6, where M is selected from the group consisting of Al, Ti, Ta, Zr, La, Hf, Ce, Zn, Cr, Sn, V and combinations thereof, each X is one or more of C, Si and Ge and each R is independently a methyl or ethyl group and comprises substantially no -H.

ALUMINUM COMPOUND, METHOD OF FORMING THIN FILM BY USING THE SAME, AND METHOD OF FABRICATING INTEGRATED CIRCUIT DEVICE

An aluminum compound is represented by Chemical Formula (I) and is used as a source material for forming an aluminum-containing thin film.

Continuous feed of antistatic agent for gas phase polymerization process

Methods may include reacting an antistatic agent with at least one alkylaluminum to form an antistatic complex and may further include feeding the antistatic complex into a polymerization process wherein the antistatic agent is an ester of a fatty acid. Methods of using an antistatic agent in a polymerization process may include feeding the antistatic agent into the polymerization process and, subsequently, reacting the antistatic agent with at least one alkylaluminum, wherein the antistatic agent with the at least one alkylaluminum gives an antistatic complex that comprises one or more reaction products between the ester of the fatty acid and the at least one alkylaluminum, wherein the one or more reaction products comprise aluminum soaps.

Telechelic polyolefin and preparation thereof

Telechelic polyolefin of formula(I) and its derivatives:
CH.sub.2CH(CH.sub.2).sub.p-A-Z(I)
wherein: A represents a (co)polymer comprising at least 95 mol % of (CH.sub.2CH.sub.2) units; Z is selected from the group comprising halogens, thiols and their derivatives, azides, amines, alcohols, the carboxylic acid function, isocyanates, silanes, phosphorous derivatives, dithioesters, dithiocarbamates, dithiocarbonates, trithiocarbonates, alkoxyamines, the vinyl function, dienes, and the group -A-(CH.sub.2).sub.pCHCH.sub.2; p is a whole number between 1 and 20, most advantageously between 6 and 9.

CONTINUOUS FEED OF ANTISTATIC AGENT FOR GAS PHASE POLYMERIZATION PROCESS

A polymer produced by a method including the following steps: reacting an antistatic agent with at least one alkylaluminum to form an antistatic complex, and feeding the antistatic complex into a polymerization process, wherein the polymer produced by the polymerization process comprises the antistatic complex. An antistatic complex produced by reacting an antistatic agent with at least one alkylaluminum.