In one embodiment, the present application discloses a surface binding compound of the Formula I or Formula II: ##STR00001##
wherein the variables EG, EG1, SP1, SP2, SP3, Ar and BG are as defined herein. In another embodiment, the application discloses a method for forming a coating on a surface of a substrate using the surface binding compound of the Formula I or Formula II.

Described herein are compositions for depositing a carbon-doped silicon containing film comprising: a precursor comprising at least one compound selected from the group consisting of: an organoaminosilane having a formula of R.sup.8N(SiR.sup.9LH).sub.2, wherein R.sup.8, R.sup.9, and L are defined herein. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

The present disclosure is directed to methods for dehydrogenatively coupled hydrosilanes and alcohols, the methods comprising contacting an organic substrate having at least one organic alcohol moiety with a mixture of at least one hydrosilane and sodium and/or potassium hydroxide, the contacting resulting in the formation of a dehydrogenatively coupled silyl ether. The disclosure further described associated compositions and methods of using the formed products.

The present disclosure describes methods for silylating aromatic organic substrates, and associated chemical systems, said methods comprising or consisting essentially of contacting the aromatic organic substrate with a mixture of (a) at least one organosilane and (b) at least one strong base, under conditions sufficient to silylate the aromatic substrate.

A method of preparing a multifunctional organosilicon compound is provided. The method comprises reacting (A) an organosilanol compound comprising a functional moiety selected from alkoxysilyl moieties and acryloxy moieties and (B) a hydridosilane compound having at least two hydrolysable groups in the presence of (C) an acetate salt. A multifunctional organosilicon compound prepared according to the method is also provided.

A process for preparing siloxanes, wherein at least one alkoxy-organosilicon compound selected from compounds of the general formula (I) and/or from compounds of the general formula (II) is/are reacted in the presence of a cationic silicon and/or germanium compound at a temperature of −40 to 250° C.

Described herein are compositions for depositing a carbon-doped silicon containing film comprising: a precursor comprising at least one compound selected from the group consisting of: an organoaminosilane having a formula of R.sup.8N(SiR.sup.9LH).sub.2, wherein R.sup.8, R.sup.9, and L are defined herein. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

A method for producing an alkenyl or alkynyl-containing organosilicon precursor composition, the method comprising the steps of distilling at least once a composition comprising an alkenyl or alkynyl-containing organosilicon compound having the formula R.sub.nSiR.sup.1.sub.4−n wherein R is selected a linear or branched C.sub.2 to C.sub.6 alkenyl group, a linear or branched C.sub.2 to C.sub.6 alkynyl group; R.sup.1 is selected from hydrogen, a linear or branched C.sub.1 to C.sub.10 alkyl group, and a C.sub.3 to C.sub.10 cyclic alkyl group; and n is a number selected from 1 to 4, wherein a distilled alkenyl or alkynyl-containing organosilicon precursor composition is produced after distilling; and packaging the distilled alkenyl or alkynyl-containing organosilicon precursor composition in a container, wherein the container permits transmission into the container of no more than 10% of ultraviolet and visible light having a wavelength of between 290 nm to 450 nm.

A method for making a dense organosilicon film with improved mechanical properties includes the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising alkoxydisiloxane; and applying energy to the gaseous composition comprising alkoxydisiloxane in the reaction chamber to induce reaction of the gaseous composition comprising alkoxydisiloxane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from ˜2.50 to ˜3.30, an elastic modulus of from ˜6 to ˜35 GPa, and an at. % carbon of from ˜10 to ˜40 as measured by XPS.

A mixture M includes at least one compound A, selected from (a1) a compound of the general formula (I) and/or (a2) a compound of the general formula (I′), at least one compound B, selected from (b1) a compound of the general formula (II) and/or (b2) a compound of the general formula (II′) and/or (b3) a compound of the general formula (II″), and at least one compound C, selected from cationic germanium(II) compounds of the general formula (III).