The present invention relates to an aminosilane compound and a composition for a silicon-containing thin film comprising the same, and more particularly, to an aminosilane compound and a composition for a silicon-containing thin film comprising the same having suitable properties that can be used as a precursor for forming a silicon-containing thin film and capable of replacing chlorosilanes.

The present invention relates to a novel ligand compound, a transition metal compound and a catalyst composition comprising the same. The novel ligand compound and the transition metal compound of the present invention may be useful as a catalyst of polymerization reaction for preparing an olefin-based polymer having a low density.

The present invention relates to a novel ligand compound, a transition metal compound and a catalyst composition comprising the same. The novel ligand compound and the transition metal compound of the present invention may be useful as a catalyst of polymerization reaction for preparing an olefin-based polymer having a low density.

##STR00001##

Disclosed herein is a salt of formula I: where R.sup.1, X, n, R, R.sup.1, Y, m, p, q, Z and o are as defined herein. Also disclosed herein are methods of using said salts in chemical synthesis, such as to prepare compounds isotopically enriched in 18F for use in PET & imaging, as well as methods to make the compounds of formula I.

##STR00001##

Disclosed herein is a salt of formula I: where R.sup.1, X, n, R, R.sup.1, Y, m, p, q, Z and o are as defined herein. Also disclosed herein are methods of using said salts in chemical synthesis, such as to prepare compounds isotopically enriched in 18F for use in PET & imaging, as well as methods to make the compounds of formula I.

An isocyanate group-containing organosilicon compound shown by the following general formula (1). This provides an organosilicon compound having only one isocyanate group, which is highly reactive, in a molecule and having two or three organopolysiloxane groups per molecule. In the formula (1), each R.sup.1 is identical to or different from one another, represents a monovalent alkyl group having 1 to 10 carbon atoms or a phenyl group, and has no aliphatic unsaturated group; each R.sup.2 is identical to or different from one another, represents a monovalent alkyl group having 1 to 10 carbon atoms, a fluorine-substituted alkyl group, a monovalent aryl group having 6 to 10 carbon atoms, or a monovalent aralkyl group having 7 to 10 carbon atoms, and has no aliphatic unsaturated group; “a” represents 0 or 1; and “b” represents an integer of 0 to 300.

##STR00001##

An isocyanate group-containing organosilicon compound shown by the following general formula (1). This provides an organosilicon compound having only one isocyanate group, which is highly reactive, in a molecule and having two or three organopolysiloxane groups per molecule. In the formula (1), each R.sup.1 is identical to or different from one another, represents a monovalent alkyl group having 1 to 10 carbon atoms or a phenyl group, and has no aliphatic unsaturated group; each R.sup.2 is identical to or different from one another, represents a monovalent alkyl group having 1 to 10 carbon atoms, a fluorine-substituted alkyl group, a monovalent aryl group having 6 to 10 carbon atoms, or a monovalent aralkyl group having 7 to 10 carbon atoms, and has no aliphatic unsaturated group; “a” represents 0 or 1; and “b” represents an integer of 0 to 300.

##STR00001##

Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, a carbon-doped silicon nitride, or a carbon-doped silicon oxynitride film.

Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, a carbon-doped silicon nitride, or a carbon-doped silicon oxynitride film.

An organic electroluminescence device of an embodiment includes a first electrode, a second electrode provided on the first electrode, and a plurality of organic material layers provided between the first electrode and the second electrode, wherein at least one organic material layer among the plurality of organic material layers include a monoamine compound, and the monoamine compound includes a core structure including two condensed rings which are combined to form a spiro structure, where each condensed ring has a condensed structure of three or more pentagonal or hexagonal rings. High emission efficiency may be achieved.