A negative resist composition comprising a polymer comprising recurring units having at least two acid-eliminatable hydroxyl or alkoxy groups in the molecule is effective for forming a resist pattern having a high resolution and minimal LER while minimizing defects.

A resist composition including a compound (D0) represented by general formula (d0) and a polymeric compound (A10) having a structural unit (a0) derived from a compound represented by general formula (a0-1) shown below (in formula (d0), n represents an integer of 2 or more; in formula (a0-1), W.sup.1 represents a polymerizable group-containing group; C.sup.t represents a tertiary carbon atom, and the α-position of C.sup.t is a carbon atom which constitutes a carbon-carbon unsaturated bond; R.sup.11 represents an aromatic hydrocarbon group which may have a substituent, or a chain hydrocarbon group; R.sup.12 and R.sup.13 each independently represents a chain hydrocarbon group, or R.sup.12 and R.sup.13 are mutually bonded to form a cyclic group ##STR00001##

A resist composition including a resin component having a constitutional unit derived from a compound represented by General Formula (a01-1) and a constitutional unit derived from a compound represented by General Formula (a02-1), and an acid generator component composed of an anion moiety and a cation moiety. In General Formula (a01-1), W.sup.1 represents a polymerizable group-containing group, C.sup.t represents a tertiary carbon atom, R.sup.11 represents an unsaturated hydrocarbon group which may have a substituent, R.sup.12 and R.sup.13 represent a chain saturated hydrocarbon group which may have a substituent, and a carbon atom at an α-position of C.sup.t constitutes a carbon-carbon unsaturated bond. In General Formula (a02-1), W.sup.2 represents a polymerizable group-containing group, Wa.sup.2 represents an aromatic hydrocarbon group, and n2 represents an integer in a range of 1 to 3 ##STR00001##

Disclosed methods include formulating azobenzene-based polymer networks to induce a modulus change in a highly crosslinked polymer, in vivo, with no external heat requirement and using a benign light as the source of stimuli. A modulus change can be achieved via a coating on the substrate and within the bulk of the substrate via photoexposure. The azobenzene-based polymer network can be formed as a coating or in the bulk of a material from either a glassy composition comprising methyl methacrylate (MMA), poly (methyl methacrylate) (PMMA), and triethylene glycol dimethacrylate (TEGDMA) or a soft material comprising of long-chain difunctional acrylates. The disclosed technology also includes methods of biofilm disruption and removal from the surface of a substrate, and includes methods of inhibiting biofilm growth and cell attachment to a substrate.

Disclosed methods include formulating azobenzene-based polymer networks to induce a modulus change in a highly crosslinked polymer, in vivo, with no external heat requirement and using a benign light as the source of stimuli. A modulus change can be achieved via a coating on the substrate and within the bulk of the substrate via photoexposure. The azobenzene-based polymer network can be formed as a coating or in the bulk of a material from either a glassy composition comprising methyl methacrylate (MMA), poly (methyl methacrylate) (PMMA), and triethylene glycol dimethacrylate (TEGDMA) or a soft material comprising of long-chain difunctional acrylates. The disclosed technology also includes methods of biofilm disruption and removal from the surface of a substrate, and includes methods of inhibiting biofilm growth and cell attachment to a substrate.

The present invention provides a resist composition which has sufficient resistant to a plating treatment and is capable of forming a resist pattern with high accuracy. The present invention also provides a method for producing a resist pattern using the resist composition, and a method for producing a plated molded article using the resist pattern. The present invention relates to a resist composition comprising a compound (I) having a quinone diazide sulfonyl group, a resin comprising a structural unit having an acid-labile group (A1), an alkali-soluble resin (A2) and an acid generator (B); a method for producing a resist pattern using the resist composition; and a method for producing a plated molded article using the resist pattern.

The object of the invention is to provide a novel olefin-based molded product useful for various applications. An olefin-based molded product comprising a polymer including a structural unit of at least one polar olefin monomer represented by the general formula (I) CH.sub.2═CH—R.sup.2—Z(R.sup.1).sub.n is provided. In the formula, Z is a hetero atom selected from the group consisting of nitrogen, oxygen, phosphorus, sulfur, and selenium; R.sup.1 is a substituted or unsubstituted hydrocarbyl group having 1 to 30 carbon atoms; n is an integer of 1 or 2 depending on the atomic species of Z; and R.sup.2 is a substituted or unsubstituted hydrocarbylene group having 2 to 20 carbon atoms.

The object of the invention is to provide a novel olefin-based molded product useful for various applications. An olefin-based molded product comprising a polymer including a structural unit of at least one polar olefin monomer represented by the general formula (I) CH.sub.2═CH—R.sup.2—Z(R.sup.1).sub.n is provided. In the formula, Z is a hetero atom selected from the group consisting of nitrogen, oxygen, phosphorus, sulfur, and selenium; R.sup.1 is a substituted or unsubstituted hydrocarbyl group having 1 to 30 carbon atoms; n is an integer of 1 or 2 depending on the atomic species of Z; and R.sup.2 is a substituted or unsubstituted hydrocarbylene group having 2 to 20 carbon atoms.

Provided are a resist compound, a method of forming a pattern by using the same, and a method of manufacturing a semiconductor device using the same. According to the present disclosure, the compound may be represented by Formula 1:

##STR00001##

Provided are a resist compound, a method of forming a pattern by using the same, and a method of manufacturing a semiconductor device using the same. According to the present disclosure, the compound may be represented by Formula 1:

##STR00001##