The present invention provides a curable composition which is suitably used for the production of a light-shielding film which has excellent light-shielding properties, exhibits low reflectivity, has excellent pattern linearity, and is not susceptible to chipping; an infrared cut filter with a light-shielding film; and a solid-state imaging device. The curable composition according to the present invention includes a curable compound which has at least one selected from the group consisting of a fluorine atom, a silicon atom, a linear alkyl group having 8 or more carbon atoms, and a branched alkyl group having 3 or more carbon atoms, and a curable functional group; a silane coupling agent; and a black pigment.

Reprocessable materials are provided that include a product of cross-linking a glycidyl methacrylate grafted high-density polyethylene (HDPE-g-GMA) with a polymacrolactone of formula (II) to form a cross-linked polymer exhibiting vitrimer characteristics. Methods for preparing the cross-linked polymer materials include reacting the glycidyl methacrylate grafted high-density polyethylene of with the polymacrolactone in the presence of a first catalyst under conditions that initiate cross-linking of HDPE-g-GMA with the polymacrolactone. Mechanically reprocessable articles include a structural element that is or includes the cross-linked polymer material. Examples of the mechanically reprocessable articles include pallets or molded structures formed from the material and configured to support a load of at least 1000 kg without bending.

The present application relates to a block copolymer and uses thereof. The present application can provide a block copolymer—which exhibits an excellent self-assembling property and thus can be used effectively in a variety of applications—and uses thereof.

A composition for sealing defects in structural materials such as roads or paved surfaces, the composition preferably comprising one or more shape memory polymer (SMP) components capable of responding to increased temperature by decreasing in volume.

The present application provides a block copolymer and uses thereof. The block copolymer of the present application exhibits an excellent self-assembling property or phase separation property, can be provided with a variety of required functions without constraint and, especially, etching selectivity can be secured, making the block copolymer effectively applicable to such uses as pattern formation.

The present application provides a block copolymer and uses thereof. The block copolymer of the present application exhibits an excellent self-assembling property or phase separation property, can be provided with a variety of required functions without constraint and, especially, etching selectivity can be secured, making the block copolymer effectively applicable to such uses as pattern formation.

The present application provides a block copolymer and uses thereof. The block copolymer of the present application exhibits an excellent self-assembling property or phase separation property, and can be provided with a variety of required functions without constraint.

The present application relates to a monomer, a method for preparing a block copolymer, a block copolymer, and uses thereof. Each monomer of the present application exhibits an excellent self-assembling property and is capable of forming a block copolymer to which a variety of required functions are granted as necessary without constraint.

A block copolymer is provided. The block copolymer according to an exemplary embodiment includes a first block represented by Chemical Formula 1 and a second block represented by Chemical Formula 2: ##STR00001##
wherein COM1 and COM2 are independently selected from a polystyrene moiety, polymethylmethacrylate moiety, polyethylene oxide moiety, polyvinylpyridine moiety, polydimethylsiloxane moiety, polyferrocenyldimethylsilane moiety, and polyisoprene moiety, R1 is hydrogen or an alkyl group with 1 to 10 carbon atoms, Ph is a phenyl group, a is 1 to 50, R2 is hydrogen or an alkyl group with 1 to 10 carbon atoms, and b is 1 to 50.

Provided is a method of manufacturing a patterned substrate. The method may be applied to a process of manufacturing a device such as an electronic device or integrated circuit, or another use, for example, to manufacture an integrated optical system, a guidance and detection pattern of a magnetic domain memory, a flat panel display, a LCD, a thin film magnetic head or an organic light emitting diode, and used to construct a pattern on a surface to be used to manufacture a discrete tract medium such as an integrated circuit, a bit-patterned medium and/or a magnetic storage device such as a hard drive.